NBB-302 0 RoHS Compliant & Pb-Free Product CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs (PTP/PMP/ Military Radio Designs • Linear and Saturated Amplifiers LMDS/UNII/VSAT/WLAN/Cellular/DWDM) Product Description The NBB-302 cascadable broadband InGaP/GaAs MMIC amplifier is a low-cost, high-performance solution for general purpose RF and microwave amplification needs. This 50Ω gain block is based on a reliable HBT proprietary MMIC design, providing unsurpassed performance for small-signal applications. Designed with an external bias resistor, the NBB-302 provides flexibility and stability. The NBB-302 is packaged in a low-cost, surface-mount ceramic package, providing ease of assembly for highvolume tape-and-reel requirements. It is available in either packaged or chip (NBB-300-D) form, where its gold metallization is ideal for hybrid circuit designs. Optimum Technology Matching® Applied Si BJT GaAs HBT GaAs MESFET Si Bi-CMOS SiGe HBT Si CMOS GaN HEMT SiGe Bi-CMOS 9InGaP/HBT 2.94 min 3.28 max Pin 1 Indicator 1.00 min 1.50 max N3 Lid ID 1.70 min 1.91 max 2.39 min 2.59 max 0.025 min 0.125 max 0.50 nom 0.50 nom Pin 1 Indicator RF OUT Ground Ground RF IN 0.98 min 1.02 max 0.38 nom All Dimensions in Millimeters 0.37 min 0.63 max Notes: 1. Solder pads are coplanar to within ±0.025 mm. 2. Lid will be centered relative to frontside metallization with a tolerance of ±0.13 mm. 3. Mark to include two characters and dot to reference pin 1. Package Style: MPGA, Bowtie, 3x3, Ceramic Features • Reliable, Low-Cost HBT Design • 12.0dB Gain, +13.7dBm P1dB@2GHz • High P1dB of [email protected] and [email protected] • Single Power Supply Operation Pin 1 Indicator 1 2 3 RF OUT • 50Ω I/O Matched for High Freq. Use Ground 8 9 4 7 6 5 Ground RF IN Ordering Information NBB-302 Functional Block Diagram Rev A5 050414 Cascadable Broadband GaAs MMIC Amplifier DC to 12GHz NBB-302-T1 or -T3Tape & Reel, 1000 or 3000 Pieces (respectively) NBB-302-E Fully Assembled Evaluation Board NBB-X-K1 Extended Frequency InGaP Amp Designer’s Tool Kit RF Micro Devices, Inc. Tel (336) 664 1233 7628 Thorndike Road Fax (336) 664 0454 Greensboro, NC 27409, USA http://www.rfmd.com 4-9 NBB-302 Absolute Maximum Ratings Parameter RF Input Power Power Dissipation Device Current Channel Temperature Operating Temperature Storage Temperature Rating Unit +20 300 70 200 -45 to +85 -65 to +150 dBm mW mA °C °C °C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. RoHS marking based on EUDirective2002/95/EC (at time of this printing). However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Exceeding any one or a combination of these limits may cause permanent damage. Parameter Specification Min. Typ. Max. Unit Overall Small Signal Power Gain, S21 12.0 11.0 9.0 Gain Flatness, GF Input and Output VSWR Bandwidth, BW Output Power @ -1dB Compression, P1dB Noise Figure, NF Third Order Intercept, IP3 Reverse Isolation, S12 Device Voltage, VD Gain Temperature Coefficient, δGT/δT 3.6 13.5 13.0 12.5 10.5 9.5 (avg.) ±0.6 2.4:1 2.0:1 2.8:1 12.5 dB dB dB dB dB dB GHz 13.7 14.8 11.0 5.5 +23.5 -15 3.9 -0.0015 dBm dBm dBm dB dBm dB V dB/°C 4.2 Condition VD =+3.9V, ICC =50mA, Z0 =50Ω, TA =+25°C f=0.1GHz to 1.0GHz f=1.0GHz to 4.0GHz f=4.0GHz to 6.0GHz f=6.0GHz to 12.0GHz f=12.0GHz to 14.0GHz f=0.1GHz to 8.0GHz f=0.1GHz to 4.0GHz f=4.0GHz to 12.0GHz f=12.0GHz to 15.0GHz BW3 (3dB) f=2.0GHz f=6.0GHz f=14.0GHz f=3.0GHz f=2.0GHz f=0.1GHz to 12.0GHz MTTF versus Temperature @ ICC =50mA Case Temperature Junction Temperature MTTF 85 122.9 >1,000,000 °C °C hours 194 °C/W Thermal Resistance θJC 4-10 J T – T CASE --------------------------- = θ JC ( °C ⁄ Watt ) V D ⋅ I CC Rev A5 050414 NBB-302 Pin 1 Function GND 2 3 4 GND GND RF IN 5 6 7 8 GND GND GND RF OUT Description Interface Schematic Ground connection. For best performance, keep traces physically short and connect immediately to ground plane. Same as pin 1. Same as pin 1. RF input pin. This pin is NOT internally DC blocked. A DC blocking capacitor, suitable for the frequency of operation, should be used in most applications. DC coupling of the input is not allowed, because this will override the internal feedback loop and cause temperature instability. Same as pin 1. Same as pin 1. Same as pin 1. RF output and bias pin. Biasing is accomplished with an external series resistor and choke inductor to VCC. The resistor is selected to set the DC current into this pin to a desired level. The resistor value is determined by the following equation: ( V CC – V DEVICE ) R = ------------------------------------------I CC 9 GND Rev A5 050414 RF OUT RF IN Care should also be taken in the resistor selection to ensure that the current into the part never exceeds maximum datasheet operating current over the planned operating temperature. This means that a resistor between the supply and this pin is always required, even if a supply near 5.0V is available, to provide DC feedback to prevent thermal runaway. Alternatively, a constant current supply circuit may be implemented. Because DC is present on this pin, a DC blocking capacitor, suitable for the frequency of operation, should be used in most applications. The supply side of the bias network should also be well bypassed. Same as pin 1. 4-11 NBB-302 Typical Bias Configuration Application notes related to biasing circuit, device footprint, and thermal considerations are available on request. VCC RCC 1,2,3 L choke (optional) 4 In 8 Out C block C block 5,6,7,9 VDEVICE VD = 3.9 V Recommended Bias Resistor Values Supply Voltage, VCC (V) Bias Resistor, RCC (Ω) 5 22 8 81 10 122 12 162 15 222 20 322 Application Notes Die Attach The die attach process mechanically attaches the die to the circuit substrate. In addition, it electrically connects the ground to the trace on which the chip is mounted, and establishes the thermal path by which heat can leave the chip. Wire Bonding Electrical connections to the chip are made through wire bonds. Either wedge or ball bonding methods are acceptable practices for wire bonding. Assembly Procedure Epoxy or eutectic die attach are both acceptable attachment methods. Top and bottom metallization are gold. Conductive silver-filled epoxies are recommended. This procedure involves the use of epoxy to form a joint between the backside gold of the chip and the metallized area of the substrate. A 150°C cure for 1 hour is necessary. Recommended epoxy is Ablebond 84-1LMI from Ablestik. Bonding Temperature (Wedge or Ball) It is recommended that the heater block temperature be set to 160°C±10°C. 4-12 Rev A5 050414 NBB-302 Extended Frequency InGaP Amplifier Designer’s Tool Kit NBB-X-K1 This tool kit was created to assist in the design-in of the RFMD NBB- and NLB-series InGap HBT gain block amplifiers. Each tool kit contains the following. • • • • 5 each NBB-300, NBB-310 and NBB-400 Ceramic Micro-X Amplifiers 5 each NLB-300, NLB-310 and NLB-400 Plastic Micro-X Amplifiers 2 Broadband Evaluation Boards and High Frequency SMA Connectors Broadband Bias Instructions and Specification Summary Index for ease of operation Rev A5 050414 4-13 NBB-302 Tape and Reel Dimensions All Dimensions in Millimeters T A O B S D F 330 mm (13") REEL ITEMS Diameter Micro-X, MPGA SYMBOL SIZE (mm) B 330 +0.25/-4.0 FLANGE Thickness Space Between Flange HUB T F Outer Diameter Spindle Hole Diameter O S Key Slit Width Key Slit Diameter A D SIZE (inches) 13.0 +0.079/-0.158 18.4 MAX 12.4 +2.0 0.724 MAX 0.488 +0.08 102.0 REF 4.0 REF 13.0 +0.5/-0.2 0.512 +0.020/-0.008 1.5 MIN 20.2 MIN 0.059 MIN 0.795 MIN PIN 1 User Direction of Feed 4.0 All dimensions in mm See Note 1 2.00 ± 0.05 1.5 See Note 6 0.30 ± 0.05 +0.1 -0.0 A 1.5 MIN. 1.75 R0.3 MAX. 5.50 ± 0.05 See Note 6 12.00 ± 0.30 Bo Ko Ao 8.0 A R0.5 TYP SECTION A-A NOTES: 1. 10 sprocket hole pitch cumulative tolerance ±0.2. 2. Camber not to exceed 1 mm in 100 mm. 3. Material: PS+C 4. Ao and Bo measured on a plane 0.3 mm above the bottom of the pocket. 5. Ko measured from a plane on the inside bottom of the pocket to the surface of the carrier. 6. Pocket position relative to sprocket hole measured as true position of pocket, not pocket hole. 4-14 Ao = 3.6 MM Bo = 3.6 MM Ko = 1.7 MM Rev A5 050414 NBB-302 Device Voltage versus Amplifier Current P1dB versus Frequency at +25°C 16.0 4.00 14.0 3.95 P1dB (dBm) Device Voltage, V D (V) 12.0 3.90 3.85 10.0 8.0 6.0 3.80 4.0 3.75 2.0 3.70 0.0 35.00 40.00 45.00 50.00 55.00 2.0 60.00 4.0 6.0 8.0 POUT/Gain versus PIN at 6 GHz 12.0 14.0 16.0 POUT/Gain versus PIN at 14 GHz 18.0 14.0 16.0 12.0 14.0 10.0 POUT (dBm), Gain (dB) POUT (dBm), Gain (dB) 10.0 Frequency (GHz) Amplifier Current, ICC (mA) 12.0 10.0 8.0 6.0 4.0 8.0 6.0 4.0 2.0 0.0 Pout (dBm) 2.0 Pout (dBm) -2.0 Gain (dB) Gain (dB) 0.0 -4.0 -12.0 -10.0 -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 PIN (dBm) -12.0 -10.0 -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 PIN (dBm) Third Order Intercept versus Frequency at +25°C 30.0 28.0 26.0 24.0 Output IP3 (dBm) 22.0 20.0 18.0 16.0 14.0 12.0 10.0 8.0 6.0 4.0 2.0 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 Frequency (GHz) Rev A5 050414 4-15 NBB-302 Note: The s-parameter gain results shown below include device performance as well as evaluation board and connector loss variations. The insertion losses of the evaluation board and connectors are as follows: 1GHz to 4GHz=-0.06dB 5GHz to 9GHz=-0.22dB 10GHz to 14GHz=-0.50dB 15GHz to 20GHz=-1.08dB S12 versus Frequency at +25°C 0.0 0.0 -5.0 -5.0 S12 (dB) S11 (dB) S11 versus Frequency at +25°C -10.0 -15.0 -10.0 -15.0 -20.0 -20.0 0.0 5.0 10.0 15.0 20.0 0.0 5.0 Frequency (GHz) 15.0 20.0 S22 versus Frequency at +25°C 20.0 0.0 15.0 -5.0 S22 (dB) S21 (dB) S21 versus Frequency at +25°C 10.0 5.0 -10.0 -15.0 0.0 -20.0 0.0 5.0 10.0 Frequency (GHz) 4-16 10.0 Frequency (GHz) 15.0 20.0 0.0 5.0 10.0 15.0 20.0 Frequency (GHz) Rev A5 050414