RFMD NBB-500-T3T

NBB-500
0
RoHS Compliant & Pb-Free Product
CASCADABLE BROADBAND
GaAs MMIC AMPLIFIER DC TO 4GHz
Typical Applications
• Narrow and Broadband Commercial and
• Gain Stage or Driver Amplifiers for
MWRadio/Optical Designs (PTP/PMP/
Military Radio Designs
• Linear and Saturated Amplifiers
LMDS/UNII/VSAT/WLAN/Cellular/DWDM)
Product Description
The NBB-500 cascadable broadband InGaP/GaAs MMIC
amplifier is a low-cost, high-performance solution for general purpose RF and microwave amplification needs. This
50Ω gain block is based on a reliable HBT proprietary
MMIC design, providing unsurpassed performance for
small-signal applications. Designed with an external bias
resistor, the NBB-500 provides flexibility and stability. The
NBB-500 is packaged in a low-cost, surface-mount
ceramic package, providing ease of assembly for highvolume tape-and-reel requirements. It is available in
either packaged or chip (NBB-500-D) form, where its gold
metallization is ideal for hybrid circuit designs.
45°
0.055
(1.40)
UNITS:
Inches
(mm)
N5
0.040
(1.02)
0.070
(1.78)
0.020
0.200 sq.
(5.08)
0.005
(0.13)
Optimum Technology Matching® Applied
Si BJT
GaAs HBT
GaAs MESFET
Si Bi-CMOS
SiGe HBT
Si CMOS
GaN HEMT
SiGe Bi-CMOS
9InGaP/HBT
Package Style: Micro-X, 4-Pin, Ceramic
Features
• Reliable, Low-Cost HBT Design
• 19.0dB Gain, +12.3dBm P1dB@2GHz
• High P1dB of [email protected]
• Single Power Supply Operation
GND
4
MARKING - N5
RF IN 1
• 50Ω I/O Matched for High Freq. Use
3 RF OUT
Ordering Information
NBB-500
2
GND
Functional Block Diagram
Rev A5 050414
Cascadable Broadband GaAs MMIC Amplifier DC to
4GHz
NBB-500-T1 or -T3Tape & Reel, 1000 or 3000 Pieces (respectively)
NBB-500-D
NBB-500 Chip Form (100 pieces minimum order)
NBB-500-E
Fully Assembled Evaluation Board
NBB-X-K1
Extended Frequency InGaP Amp Designer’s Tool Kit
RF Micro Devices, Inc.
Tel (336) 664 1233
7628 Thorndike Road
Fax (336) 664 0454
Greensboro, NC 27409, USA
http://www.rfmd.com
4-49
NBB-500
Absolute Maximum Ratings
Parameter
RF Input Power
Power Dissipation
Device Current
Channel Temperature
Operating Temperature
Storage Temperature
Rating
Unit
+20
300
70
200
-45 to +85
-65 to +150
dBm
mW
mA
°C
°C
°C
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. RoHS marking based on EUDirective2002/95/EC
(at time of this printing). However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Exceeding any one or a combination of these limits may cause permanent damage.
Parameter
Specification
Min.
Typ.
Max.
Unit
Overall
Small Signal Power Gain, S21
19.0
16.0
Gain Flatness, GF
Input and Output VSWR
Bandwidth, BW
Output Power @
-1dB Compression, P1dB
Noise Figure, NF
Third Order Intercept, IP3
Reverse Isolation, S12
Device Voltage, VD
Gain Temperature Coefficient,
δGT/δT
3.6
20.5
19.5
18.5
±0.8
1.70:1
1.45:1
1.65:1
4.2
dB
dB
dB
dB
GHz
12.3
14.0
3.2
+26.5
-17.0
3.9
-0.0015
dBm
dBm
dB
dBm
dB
V
dB/°C
4.2
Condition
VD =+3.9V, ICC =35mA, Z0 =50Ω, TA =+25°C
f=0.1GHz to 1.0GHz
f=1.0GHz to 2.0GHz
f=2.0GHz to 4.0GHz
f=0.1GHz to 3.0GHz
f=0.1GHz to 4.0GHz
f=4.0GHz to 6.0GHz
f=6.0GHz to 10.0GHz
BW3 (3dB)
f=2.0GHz
f=6.0GHz
f=3.0GHz
f=2.0GHz
f=0.1GHz to 10.0GHz
MTTF versus Temperature
@ ICC =35mA
Case Temperature
Junction Temperature
MTTF
85
120
>1,000,000
°C
°C
hours
256
°C/W
Thermal Resistance
θJC
4-50
J T – T CASE
--------------------------- = θ JC ( °C ⁄ Watt )
V D ⋅ I CC
Rev A5 050414
NBB-500
Pin
1
Function
RF IN
2
GND
3
RF OUT
Description
Interface Schematic
RF input pin. This pin is NOT internally DC blocked. A DC blocking
capacitor, suitable for the frequency of operation, should be used in
most applications. DC coupling of the input is not allowed, because this
will override the internal feedback loop and cause temperature instability.
Ground connection. For best performance, keep traces physically short
and connect immediately to ground plane.
RF output and bias pin. Biasing is accomplished with an external series
resistor and choke inductor to VCC. The resistor is selected to set the
DC current into this pin to a desired level. The resistor value is determined by the following equation:
( V CC – V DEVICE )
R = ------------------------------------------I CC
4
GND
Rev A5 050414
RF OUT
RF IN
Care should also be taken in the resistor selection to ensure that the
current into the part never exceeds maximum datasheet operating current over the planned operating temperature. This means that a resistor
between the supply and this pin is always required, even if a supply
near 5.0V is available, to provide DC feedback to prevent thermal runaway. Because DC is present on this pin, a DC blocking capacitor, suitable for the frequency of operation, should be used in most
applications. The supply side of the bias network should also be well
bypassed.
Same as pin 2.
4-51
NBB-500
Typical Bias Configuration
Application notes related to biasing circuit, device footprint, and thermal considerations are available on request.
VCC
RCC
4
L choke
(optional)
1
In
3
Out
C block
C block
2
VDEVICE
VD = 3.9 V
Recommended Bias Resistor Values
Supply Voltage, VCC (V)
Bias Resistor, RCC (Ω)
4-52
5
31
8
117
10
174
12
231
15
317
20
460
Rev A5 050414
NBB-500
Chip Outline Drawing - NBB-500-D
Chip Dimensions: 0.017” x 0.017” x 0.004”
UNITS:
Inches
(mm)
Back of chip is ground.
OUTPUT
INPUT
0.017 ± 0.001
(0.44 ± 0.03)
GND
VIA
0.017 ± 0.001
(0.44 ± 0.03)
0.004 ± 0.001
(0.10 ± 0.03)
Sales Criteria - Unpackaged Die
Die Sales Information
• All segmented die are sold 100% DC-tested. Testing parameters for wafer-level sales of die material shall be negotiated on a case-by-case basis.
• Segmented die are selected for customer shipment in accordance with RFMD Document #6000152 - Die Product
Final Visual Inspection Criteria1.
• Segmented die has a minimum sales volume of 100 pieces per order. A maximum of 400 die per carrier is allowable.
Die Packaging
• All die are packaged in GelPak ESD protective containers with the following specification:
O.D.=2"X2", Capacity=400 Die (20X20 segments), Retention Level=High(X8).
• GelPak ESD protective containers are placed in a static shield bag. RFMD recommends that once the bag is
opened the GelPak/s should be stored in a controlled nitrogen environment. Do not press on the cover of a closed
GelPak, handle by the edges only. Do not vacuum seal bags containing GelPak containers.
• Precaution must be taken to minimize vibration of packaging during handling, as die can shift during transit 2.
Package Storage
• Unit packages should be kept in a dry nitrogen environment for optimal assembly, performance, and reliability.
• Precaution must be taken to minimize vibration of packaging during handling, as die can shift during transit2.
Die Handling
• Proper ESD precautions must be taken when handling die material.
• Die should be handled using vacuum pick-up equipment, or handled along the long side with a sharp pair of tweezers. Do not touch die with any part of the body.
• When using automated pick-up and placement equipment, ensure that force impact is set correctly. Excessive force
may damage GaAs devices.
Rev A5 050414
4-53
NBB-500
Die Attach
• The die attach process mechanically attaches the die to the circuit substrate. In addition, the utilization of proper die
attach processes electrically connect the ground to the trace on which the chip is mounted. It also establishes the
thermal path by which heat can leave the chip.
• Die should be mounted to a clean, flat surface. Epoxy or eutectic die attach are both acceptable attachment methods. Top and bottom metallization are gold. Conductive silver-filled epoxies are recommended. This procedure
involves the use of epoxy to form a joint between the backside gold of the chip and the metallized area of the substrate.
• All connections should be made on the topside of the die. It is essential to performance that the backside be well
grounded and that the length of topside interconnects be minimized.
• Some die utilize vias for effective grounding. Care must be exercised when mounting die to preclude excess run-out
on the topside.
Die Wire Bonding
• Electrical connections to the chip are made through wire bonds. Either wedge or ball bonding methods are acceptable practices for wire bonding.
• All bond wires should be made as short as possible.
Notes
1
RFMD Document #6000152 - Die Product Final Visual Inspection Criteria. This document provides guidance for die
inspection personnel to determine final visual acceptance of die product prior to shipping to customers.
2RFMD
takes precautions to ensure that die product is shipped in accordance with quality standards established to minimize material shift. However, due to the physical size of die-level product, RFMD does not guarantee that material will
not shift during transit, especially under extreme handling circumstances. Product replacement due to material shift will
be at the discretion of RFMD.
4-54
Rev A5 050414
NBB-500
Extended Frequency InGaP Amplifier Designer’s Tool Kit
NBB-X-K1
This tool kit was created to assist in the design-in of the RFMD NBB- and NLB-series InGap HBT gain block amplifiers.
Each tool kit contains the following.
•
•
•
•
5 each NBB-300, NBB-310 and NBB-400 Ceramic Micro-X Amplifiers
5 each NLB-300, NLB-310 and NLB-400 Plastic Micro-X Amplifiers
2 Broadband Evaluation Boards and High Frequency SMA Connectors
Broadband Bias Instructions and Specification Summary Index for ease of operation
Rev A5 050414
4-55
NBB-500
Tape and Reel Dimensions
All Dimensions in Millimeters
T
A
O
B
S
D
F
330 mm (13") REEL
ITEMS
SYMBOL
Diameter
FLANGE Thickness
HUB
Micro-X, MPGA
SIZE (mm)
SIZE (inches)
B
T
330 +0.25/-4.0
18.4 MAX
13.0 +0.079/-0.158
0.724 MAX
Space Between Flange
Outer Diameter
F
O
12.4 +2.0
102.0 REF
0.488 +0.08
4.0 REF
Spindle Hole Diameter
Key Slit Width
S
A
Key Slit Diameter
D
13.0 +0.5/-0.2 0.512 +0.020/-0.008
1.5 MIN
0.059 MIN
20.2 MIN
0.795 MIN
LEAD 1
User Direction of Feed
4.0
All dimensions in mm
0.30
± 0.05
R0.3 MAX.
SEE NOTE 1
2.00 ± 0.05
5.0
+0.1
-0.0
B1
A
SEE NOTE 6
5.0 MIN.
1.75
5.50 ± 0.05
B1
12.0
± 0.3
SEE NOTE 6
Bo
Ko
2.5
A1
Ao
8.0
A
R0.3 TYP.
SECTION A-A
NOTES:
1. 10 sprocket hole pitch cumulative tolerance ±0.2.
2. Camber not to exceed 1 mm in 100 mm.
3. Material: PS+C
4. Ao and Bo measured on a plane 0.3 mm above the bottom of the pocket.
5. Ko measured from a plane on the inside bottom of the pocket to the surface of the carrier.
6. Pocket position relative to sprocket hole measured as true position of pocket, not pocket hole.
4-56
Ao = 7.0 MM
A1 = 1.45 MM
Bo = 7.0 MM
B1 = 0.9 MM
Ko = 2.0 MM
Rev A5 050414
NBB-500
Device Voltage versus Amplifier Current
P1dB versus Frequency at 25°C
4.00
20.0
18.0
14.0
3.95
P1dB (dBm)
Device Voltage, V D (V)
16.0
12.0
10.0
8.0
3.90
6.0
4.0
2.0
3.85
0.0
20.00
25.00
30.00
35.00
40.00
45.00
50.00
1.0
2.0
3.0
4.0
5.0
6.0
Frequency (GHz)
Amplifier Current, ICC (mA)
POUT/Gain versus PIN at 2 GHz
POUT/Gain versus PIN at 6 GHz
25.0
18.0
16.0
14.0
POUT (dBm), Gain (dB)
POUT (dBm), Gain (dB)
20.0
15.0
10.0
12.0
10.0
8.0
6.0
4.0
5.0
Pout (dBm)
Pout (dBm)
2.0
Gain (dB)
Gain (dB)
0.0
0.0
-14.0
-12.0
-10.0
-8.0
-6.0
-4.0
-2.0
0.0
2.0
4.0
PIN (dBm)
-14.0
-12.0
-10.0
-8.0
-6.0
-4.0
-2.0
0.0
2.0
PIN (dBm)
Third Order Intercept versus Frequency at 25°C
30.0
Output IP3 (dBm)
25.0
20.0
15.0
10.0
5.0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
Frequency (GHz)
Rev A5 050414
4-57
NBB-500
Note: The s-parameter gain results shown below include device performance as well as evaluation board and connector
loss variations. The insertion losses of the evaluation board and connectors are as follows:
1GHz to 4GHz=-0.06dB
5GHz to 9GHz=-0.22dB
10GHz to 14GHz=-0.50dB
15GHz to 20GHz=-1.08dB
S12 versus Frequency, Over Temperature
0.0
0.0
-5.0
-5.0
-10.0
-10.0
-15.0
-15.0
S12 (dB)
S11 (dB)
S11 versus Frequency, Over Temperature
-20.0
-20.0
-25.0
-25.0
-30.0
-30.0
+25 C
-40 C
+85 C
-35.0
+25 C
-40 C
+85 C
-35.0
-40.0
-40.0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0.0
1.0
2.0
3.0
Frequency (GHz)
4.0
5.0
6.0
7.0
8.0
9.0
10.0
Frequency (GHz)
S21 versus Frequency, Over Temperature
S22 versus Frequency, Over Temperature
30.0
0.0
-5.0
20.0
-10.0
10.0
S22 (dB)
S21 (dB)
-15.0
0.0
-10.0
-20.0
-25.0
-20.0
-30.0
+25 C
+25 C
-40 C
+85 C
-30.0
-35.0
+85 C
-40.0
-40.0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
Frequency (GHz)
4-58
-40 C
7.0
8.0
9.0
10.0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
Frequency (GHz)
Rev A5 050414