NDA-322 4 GaInP/GaAs HBT MMIC DISTRIBUTED AMPLIFIER DC TO 12GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs Military Radio Designs • Linear and Saturated Amplifiers Product Description The NDA-322 Casacadable Broadband GaInP/GaAs MMIC amplifier is a low-cost, high-performance solution for high frequency RF, microwave, or optical amplification needs. This 50Ω gain block is based on a reliable HBT proprietary MMIC design, providing unsurpassed performance for small-signal applications. Designed with an external bias resistor, the NDA-322 provides flexibility and stability. In addition, the NDA-320-D chip was designed with an additional ground via, providing improved thermal resistance performance. The NDA-series of distributed amplifiers provide design flexibility by incorporating AGC functionality into their designs. Optimum Technology Matching® Applied Si BJT GaAs HBT GaAs MESFET Si Bi-CMOS SiGe HBT Si CMOS !GaInP/HBT 2.94 min 3.28 max Pin 1 Indicator 1.00 min 1.50 max 0.025 min 0.125 max 0.50 nom 0.50 nom Pin 1 Indicator Ground D5 Lid ID 1.70 min 1.91 max 2.39 min 2.59 max RF OUT VCC1 Ground RF IN 0.98 min 1.02 max 0.38 nom All Dimensions in Millimeters 0.37 min 0.63 max Notes: 1. Solder pads are coplanar to within ±0.025 mm. 2. Lid will be centered relative to frontside metallization with a tolerance of ±0.13 mm. 3. Mark to include two characters and dot to reference pin 1. Package Style: MPGA, Bowtie, 3x3, Ceramic Features GaN HEMT • Reliable, Low-Cost HBT Design • 9.0dB Gain/P1dB of 13.1dBm @ 2GHz • Fixed Gain or AGC Operation AGC Pin 1 Indicator 1 2 • Secondary Ground-Via for Better 3 RF OUT Ground 8 9 • 50Ω I/O Matched for High Freq. Use Thermal Management 4 Ground RF IN 7 6 5 Ordering Information NDA-322 Functional Block Diagram Rev A0 020115 GaInP/GaAs HBT MMIC Distributed Amplifier DC to 12GHz RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com 4-413 GENERAL PURPOSE AMPLIFIERS 4 NDA-322 Absolute Maximum Ratings Parameter GENERAL PURPOSE AMPLIFIERS 4 RF Input Power Power Dissipation Device Current, ICC1 Device Current, ICC2 Junction Temperature, Tj Operating Temperature Storage Temperature Rating Unit +20 300 42 48 200 -45 to +85 -65 to +150 dBm mW mA mA °C °C °C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Exceeding any one or a combination of these limits may cause permanent damage. Parameter Specification Min. Typ. Max. Unit Overall Small Signal Power Gain, S21 8.0 8.0 Gain Flatness Input and Output VSWR Bandwidth, BW Output Power @ 1dB Compression Noise Figure, NF Third Order Intercept, IP3 Reverse Isolation, S12 Device Voltage, VZ AGC Control Voltage, VC1 Gain Temperature Coefficient, δGT/δT 3.6 9.0 10.0 10.0 +0.6 1.9:1 1.9:1 12.5 13.1 dB dB dB dB GHz dBm 17.0 9.0 6.4 23.0 -15 4.7 4.0 -0.0015 dBm dBm dB dBm dB V V dB/°C 4.2 Condition VCC1 =+10V, VCC2 =+10V, VC1 =+4.75V, VC2 =+2.98V, ICC1 =24mA, ICC2 =40mA, Z0 =50Ω, TA =+25°C f=0.1GHz to 6.0GHz f=6.0GHz to 10.0GHz f=10.0GHz to 12.0GHz f=0.1GHz to 8.0GHz f=0.1GHz to 10.0GHz f=10.0GHz to 12.0GHz BW3 (3dB) f=2.0GHz f=6.0GHz f=12.0GHz f=2.0GHz f=2.0GHz f=0.1GHz to 12.0GHz MTTF versus Junction Temperature Case Temperature Junction Temperature MTTF 85 113.9 >1,000,000 °C °C hours 124 °C/W Thermal Resistance θJC Thermal Resistance, at any temperature (in °C/Watt) can be estimated by the following equation: θJC (°C/Watt)=124[TJ(°C)/113.9] Suggested Voltage Supply: VCC1 >4.7V, VCC2 >5.0V 4-414 Rev A0 020115 NDA-322 Pin 1 Function GND 2 VCC1 Description Interface Schematic Ground connection. For best performance, keep traces physically short and connect immediately to ground plane. AGC bias pin. Biasing is accomplished with an external series resistor to VCC1. The resistor is selected to set the DC current into this pin to a desired level. The resistor value is determined by the following equation: ( V CC1 – V DEVICE1 ) R = ------------------------------------------------I CC1 3 4 GND RF IN 5 6 7 8 GND GND GND RF OUT AND VCC2 4 GENERAL PURPOSE AMPLIFIERS Care should also be taken in the resistor selection to ensure that the current into the part never exceeds maximum datasheet operating (mA) over the planned operating temperature. This means that a resistor between the supply and this pin is always required, even if a supply near 5.0V is available, to provide DC feedback to prevent thermal runaway. Alternatively, a constant current supply circuit may be implemented. Because DC is present on this pin, a DC blocking capacitor, suitable for the frequency of operation, should be used in most applications. The supply side of the bias network should also be well bypassed. Same as pin 1. RF input pin. This pin is NOT internally DC blocked. A DC blocking capacitor, suitable for the frequency of operation, should be used in most applications. DC coupling of the input is not allowed, because this will override the internal feedback loop and cause temperature instability. Same as pin 1. Same as pin 1. Same as pin 1. RF output and bias pin. Biasing is accomplished with an external series resistor and choke inductor to VCC2. The resistor is selected to set the DC current into this pin to a desired level. The resistor value is determined by the following equation: ( V CC2 – V DEVICE2 ) R = ------------------------------------------------I CC2 9 GND Rev A0 020115 Care should also be taken in the resistor selection to ensure that the current into the part never exceeds maximum datasheet operating current (mA) over the planned operating temperature. This means that a resistor between the supply and this pin is always required, even if a supply near 5.0V is available, to provide DC feedback to prevent thermal runaway. Alternatively, a constant current supply circuit may be implemented. Because DC is present on this pin, a DC blocking capacitor, suitable for the frequency of operation, should be used in most applications. The supply side of the bias network should also be well bypassed. Same as pin 1. 4-415 NDA-322 Typical Bias Configuration Application notes related to biasing circuit, device footprint, and thermal considerations are available on request. VCC2 VCC1 D1, Blocking Diode RCC1 C1 1 uF VC1 4 RCC2 ICC2 GENERAL PURPOSE AMPLIFIERS Out In Q1 Q2 Simplified Schematic of Distributed Amplifer Bias Resistor Selection RCC1: For 4.7V<VCC1 <5.0V RCC1 =0Ω For 5.0V<VCC1 <10.0V RCC1 =VCC1 -4.7/0.024Ω RCC2: For 5.0V<VCC2 <10.0V RCC1 =VCC2 -2.9/0.040Ω Typical Bias Parameters for VCC1 =VCC2 =10V: VCC1 (V) 10 VCC2 (V) 10 ICC1 (mA) 24 VC1 (V) 4.75 RCC1 (Ω) 220 ICC2 (mA) 40 VC2 (V) 2.9 RCC2 (Ω) 150 Application Notes Die Attach The die attach process mechanically attaches the die to the circuit substrate. In addition, it electrically connects the ground to the trace on which the chip is mounted, and establishes the thermal path by which heat can leave the chip. Assembly Procedure Epoxy or eutectic die attach are both acceptable attachment methods. Top and bottom metallization are gold. Conductive silver-filled epoxies are recommended. This procedure involves the use of epoxy to form a joint between the backside gold of the chip and the metallized area of the substrate. A 150°C cure for 1 hour is necessary. Recommended epoxy is Ablebond 84-1LMI from Ablestik. Bonding Temperature (Wedge or Ball) It is recommended that the heater block temperature be set to 160°C±10°C. 4-416 Rev A0 020115 NDA-322 Chip Outline Drawing - NDA-320-D Chip Dimensions: 0.027” x 0.022” x 0.004” GENERAL PURPOSE AMPLIFIERS 4 Rev A0 020115 4-417 NDA-322 Device Voltage versus Amplifier Current P1dB versus Frequency at 25°C 20.0 6.0 5.0 P1dB (dBm) 3.0 10.0 2.0 5.0 1.0 0.0 0.0 10.0 20.0 30.0 40.0 2.0 50.0 4.0 6.0 POUT/Gain versus PIN at 6 GHz 10.0 12.0 20.0 15.0 15.0 10.0 10.0 5.0 0.0 -5.0 5.0 0.0 -5.0 -10.0 Pout (dBm) Pout (dBm) Gain (dB) Gain (dB) -10.0 -15.0 14.0 POUT/Gain versus PIN at 14 GHz POUT (dBm), Gain (dB) POUT (dBm), Gain (dB) 8.0 Frequency (GHz) Amplifier Current, ICC (mA) -15.0 -10.0 -5.0 0.0 5.0 10.0 PIN (dBm) -15.0 -10.0 -5.0 0.0 5.0 PIN (dBm) Third Order Intercept versus Frequency at 25°C 40.0 35.0 30.0 Output IP3 (dBm) GENERAL PURPOSE AMPLIFIERS 4 Device Voltage, V D (V) 15.0 4.0 25.0 20.0 15.0 10.0 5.0 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 Frequency (GHz) 4-418 Rev A0 020115 NDA-322 The s-parameter gain results shown below include device performance as well as evaluation board and connector loss variations. The insertion losses of the evaluation board and connectors are as follows: 1GHz to 4GHz=-0.06dB 5GHz to 9GHz=-0.22dB 10GHz to 14GHz=-0.50dB 15GHz to 20GHz=-1.08dB S11 versus Frequency S12 versus Frequency 0.0 4 GENERAL PURPOSE AMPLIFIERS 0.0 -5.0 -5.0 -10.0 -10.0 S12 (dB) S11 (dB) -15.0 -20.0 -15.0 -25.0 -20.0 -30.0 -25.0 -35.0 -40.0 -30.0 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 0.0 2.0 4.0 Frequency (GHz) 6.0 8.0 10.0 12.0 14.0 10.0 12.0 14.0 Frequency (GHz) S21 versus Frequency S22 versus Frequency 14.0 0.0 12.0 -5.0 10.0 S22 (dB) S21 (dB) -10.0 8.0 6.0 -15.0 -20.0 4.0 -25.0 2.0 0.0 -30.0 0.0 2.0 4.0 6.0 8.0 Frequency (GHz) Rev A0 020115 10.0 12.0 14.0 0.0 2.0 4.0 6.0 8.0 Frequency (GHz) 4-419 NDA-322 GENERAL PURPOSE AMPLIFIERS 4 4-420 Rev A0 020115