RF2301 4 HIGH ISOLATION BUFFER AMPLIFIER Typical Applications • Local Oscillator Buffer Amplifiers • Portable Battery-Powered Equipment • FDD and TDD Communication Systems • Wireless LAN • Commercial and Consumer Systems • ISM Band Applications Product Description 0.018 0.014 0.196 0.189 0.050 0.157 0.150 Si Bi-CMOS SiGe HBT ü Dimensions in mm 0.244 0.229 8° MAX 0° MIN 0.034 0.016 Optimum Technology Matching® Applied GaAs HBT GENERAL PURPOSE AMPLIFIERS The RF2301 is a high reverse isolation buffer amplifier. The device is manufactured on a low-cost Gallium Arsenide MESFET process, and has been designed for use as a general purpose buffer in high-end communication systems operating at frequencies from less than 300MHz to higher than 2500MHz. With +5dBm output power, it may also be used as a driver in transmitter applications. The device is packaged in an 8-lead plastic package. The product is self-contained, requiring just a resistor and blocking capacitors to operate. The output power, combined with 50dB reverse isolation at 900MHz allows excellent buffering of LO sources to impedance changes. The device can be used in 3V battery applications. The unit has a total gain of 17dB with only 14mA current from a 3V supply. Si BJT 4 -A0.008 0.004 0.009 0.007 0.068 0.053 NOTES: 1. Shaded lead is Pin 1. 2. All dimensions are excluding mold flash. 3. Lead coplanarity 0.005 with respect to datum "A". Package Style: SOIC-8 GaAs MESFET Si CMOS Features • Single 2.7V to 6.0V Supply • +4dBm Output Power • 21dB Small Signal Gain • 50dB Reverse Isolation at 900MHz • Low DC Current Consumption of 14mA • 300MHz to 2500MHz Operation GND 1 8 VDD1 GND 2 7 VDD2 RF IN 3 GND 4 6 RF OUT 5 GND Functional Block Diagram Rev A8 010717 Ordering Information RF2301 RF2301 PCBA High Isolation Buffer Amplifier Fully Assembled Evaluation Board RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com 4-37 RF2301 Absolute Maximum Ratings Parameter Supply Voltage (VDD) DC Supply Current Input RF Power Operating Ambient Temperature Storage Temperature Parameter GENERAL PURPOSE AMPLIFIERS 4 Rating Unit -0.5 to +6.5 60 +10 -40 to +85 -40 to +150 VDC mA dBm °C °C Specification Min. Typ. Max. Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Unit T=25°C, VDD =5VDC Overall Nominal Frequency Range Input IP3 Noise Figure Input VSWR Output VSWR Power Supply Voltage 300 to 2500 -8 8 <2:1 <2:1 2.7 to 6.0 MHz dBm dB In a 50Ω system In a 50Ω system V Using Broad Band Application Circuit, VDD =5VDC, Freq=2500MHZ, T=25°C Nominal 5V Configuration Gain P1dB Output Power Supply Current Reverse Isolation 21 10 24 +4 30 50 50 40 40 26 40 dB dBm mA dB dB dB dB Nominal 3V Configuration Gain P1dB Output Power Supply Current Reverse Isolation 4-38 Condition 15 17 0 14 50 50 40 40 dB dBm mA dB dB dB dB 900MHz, without RF input 900MHz, with RF input, saturated 2500MHz, without RF input 2500MHz, with RF input, saturated Using Broad Band Application Circuit, VDD =3VDC, Freq=2500MHZ, T=25°C 900MHz, without RF input 900MHz, with RF input, saturated 2500MHz, without RF input 2500MHz, with RF input, saturated Rev A8 010717 RF2301 Function GND 2 3 GND RF IN 4 5 6 GND GND RF OUT 7 VDD2 8 VDD1 Rev A8 010717 Description Interface Schematic Low inductance ground connections. Use individual vias to backside ground plane, placed within 0.030" of pin landing for optimum performance. Same as pin 1. DC-coupled RF input. A broadband impedance match is produced by internal shunt resistive feedback. The DC level is 0V. If a DC voltage is present from connected circuitry, an external DC-blocking capacitor is required for the proper DC operating point. Same as pin 1. Same as pin 1. Open drain RF output. A broadband impedance match is produced by an external 100Ω resistor to power supply as shown in Application Schematic 1. Approximately 3dB improvement in gain and output power can be obtained over at least a 20% bandwidth by replacing the resistor to power supply with an external chip inductor network as shown in Application Schematic 2. An external DC-blocking capacitor is required if the following circuitry is not DC-blocked. VDD1 VDD2 4 RF OUT RF IN Power supply connections. Bypass with external chip capacitor and individual via to backside ground plane. Power supply connections. Bypass with external chip capacitor and individual via to backside ground plane. 4-39 GENERAL PURPOSE AMPLIFIERS Pin 1 RF2301 Application Schematic 1 Broadband Match VDD 1 nF 4 RF IN 1 8 2 7 3 6 GENERAL PURPOSE AMPLIFIERS 100 pF 100 Ω RF OUT 100 pF 4 5 Application Schematic 2 Optimum Match VDD 100 pF RF IN 1 8 2 7 3 6 100 pF 4 4-40 L2 RF OUT L1 100 pF 5 FREQUENCY 900 MHz L1 18 nH L2 22 nH 2500 MHz ---- 2.7 nH Rev A8 010717 RF2301 Evaluation Board Schematic (Download Bill of Materials from www.rfmd.com.) P1-1 C3 100 pF 50 Ω µstrip 8 2 7 3 6 4 5 C A C4 1 nF 50 Ω µstrip B See Chart C2 100 pF J2 RF OUT 2301400A FREQUENCY BAND P1 COMPONENT 1 VDD N/A 2 GND 18 nH 22 nH 3 0Ω N/A A B C 100 Ω 0Ω 900 MHz N/A 2450 MHz 2.7 nH BROADBAND (default config.) P1-1 Evaluation Board Layout 1.43” x 1.43” Board Thickness 0.031”; Board Material FR-4 Rev A8 010717 4 GENERAL PURPOSE AMPLIFIERS J1 RF IN C1 100 pF 1 4-41 RF2301 Typical Characteristics Broadband Application Circuit 30 30 Gain 20 25 10 Idd 4 20 dB GENERAL PURPOSE AMPLIFIERS -10 15 -20 -30 dBm, mA 0 10 -40 5 P1dB Reverse Isolation -50 -60 0 3 3.5 4 4.5 5 Vdd (V) 30 30 Gain Gain 20 20 10 10 dB dB 00 -10 -10 -20 -20 -30 -30 Reverse Isolation Reverse Isolation -40 -40 -50 -50 0 500 500 1000 1000 1500 1500 2000 2000 2500 2500 3000 3000 Frequency (MHz) (MHz) 4-42 Rev A8 010717 RF2301 S11, Vcc=3V VCC = 3V S11 5.5 GHz 10.0 600 MHz 5 GHz -10.0 2 GHz 2.0 2.0 0.6 0.8 1.0 1.0 0.2 5 GHz 500 MHz -10.0 .0 -2 2.5 GHz -0. 6 - -1.0 -1.0 Swp Min 0.01GHz 1.5 GHz 4.5 GHz 4 0. -0.8 .0 .0 -2 -3 -0.8 -0.2 .0 -4. 0 -5.0 4 0. 3.7 GHz -4. 0 -5.0 100 MHz 5 GHz -10.0 -0.2 -0. 6 10.0 4.0 5.0 3.0 2.0 1.0 0.8 0.6 0.4 0.2 10.0 0 10.0 4.0 5.0 3.0 2.0 0.2 1.0 -1.0 -0. 6 -1.0 -0.8 0.8 0. 4 0.8 4.0 5.0 10.0 3 GHz 0.6 0 3. -3 0.6 Swp Max 6GHz 0. 4 0 3. 0.4 Swp Min 0.01GHz S22, V S22 Vcc=5V CC = 5V Swp Max 6GHz 4.0 5.0 0.2 -0.8 .0 .0 -2 -3 Swp Min 0.01GHz .0 -2 .4 -0 S11, V S11 Vcc=5V CC = 5V 0 3 GHz 4.5 GHz .0 -0. 6 5 GHz -3 -4. 0 -5.0 .4 -0 -0.2 -4. 0 -5.0 100 MHz -10.0 -0.2 - 4 500 MHz 1 GHz Swp Min 0.01GHz S-Parameter Conditions: All plots are taken at ambient temperature=25°C. NOTE: All S11 and S22 plots shown were taken from an RF2301 evaluation board with external input and output tuning components removed and the reference points at the RF IN and RF OUT pins. Rev A8 010717 4-43 GENERAL PURPOSE AMPLIFIERS 4.0 5.0 3.0 2.0 1.0 0.8 0.6 0 10.0 4.0 5.0 3.0 2.0 1.0 0.8 10.0 0.4 0.2 0.6 2.0 0.2 0.4 0 3. 4.0 5.0 0.2 0. 4 4.0 5.0 0.2 1.0 0.8 0. 4 0 3. 10.0 0 Swp Max 6GHz 0.6 2.0 0.6 0.8 1.0 S22, V S22 Vcc=3V CC = 3V Swp Max 6GHz RF2301 Gain versus Temperature IIP3 versus Temperature Freq = 900 MHz Freq = 900 MHz 23.0 -5.0 22.0 -5.5 21.0 -6.0 IIP3 (dBm) Gain (dB) 20.0 19.0 -6.5 18.0 -7.0 4 GENERAL PURPOSE AMPLIFIERS 17.0 -7.5 Vcc=3V 16.0 Vcc=3V Vcc=5V 15.0 -60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 Vcc=5V -8.0 -60.0 100.0 -40.0 -20.0 Temperature (°C) 0.0 20.0 40.0 60.0 80.0 100.0 Temperature (°C) OP1dB versus Temperature ICC versus Temperature Freq = 900 MHz 5.0 Freq = 900 MHz 27.0 4.0 26.0 3.0 2.0 ICC (mA) OP1dB (dBm) 25.0 1.0 24.0 23.0 0.0 -1.0 22.0 Vcc=3V Vcc=3V Vcc=5V Vcc=5V -2.0 -60.0 -40.0 -20.0 0.0 20.0 40.0 Temperature (°C) 4-44 60.0 80.0 100.0 21.0 -60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0 Temperature (°C) Rev A8 010717 RF2301 Gain versus Temperature IIP3 versus Temperature Freq = 1950 MHz Freq = 1950 MHz 23.0 -5.0 Vcc=3V 22.0 Vcc=5V -5.5 21.0 -6.0 IIP3 (dBm) Gain (dB) 20.0 19.0 -6.5 18.0 -7.0 4 17.0 -7.5 GENERAL PURPOSE AMPLIFIERS Vcc=3V 16.0 Vcc=5V 15.0 -60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 -8.0 -60.0 100.0 -40.0 -20.0 Temperature (°C) 0.0 20.0 40.0 60.0 80.0 100.0 Temperature (°C) OP1dB versus Temperature ICC versus Temperature Freq = 1950 MHz 5.0 Freq = 1950 MHZ 26.0 25.5 4.0 25.0 24.5 24.0 ICC (mA) OP1dB (dBm) 3.0 2.0 23.5 23.0 1.0 22.5 22.0 0.0 Vcc=3V Vcc=3V 21.5 Vcc=5V -1.0 -60.0 -40.0 -20.0 0.0 20.0 40.0 Temperature (°C) Rev A8 010717 60.0 80.0 100.0 21.0 -60.0 Vcc=5V -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0 Temperature (°C) 4-45 RF2301 Gain versus Temperature IIP3 versus Temperature Freq = 2450 MHz Freq = 2450 MHz -5.0 21.0 Vcc=3V 20.0 -5.5 Vcc=5V 19.0 -6.0 IIP3 (dBm) Gain (dB) 18.0 17.0 -6.5 -7.0 16.0 -7.5 4 GENERAL PURPOSE AMPLIFIERS 15.0 Vcc=3V -8.0 14.0 Vcc=5V 13.0 -60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 -8.5 -60.0 100.0 -40.0 -20.0 Temperature (°C) 0.0 20.0 40.0 60.0 80.0 100.0 Temperature (°C) OP1dB versus Temperature ICC versus Temperature Freq = 2450 MHz Freq = 2450 MHz 27.0 3.0 2.5 26.0 2.0 1.5 ICC (mA) OP1dB (dBm) 25.0 1.0 0.5 24.0 0.0 23.0 -0.5 -1.0 22.0 Vcc=3V -1.5 -2.0 -60.0 Vcc=3V Vcc=5V -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 Vcc=5V 21.0 -60.0 100.0 -40.0 -20.0 Temperature (°C) 0.0 20.0 40.0 60.0 80.0 100.0 Temperature (°C) S11 of Evaluation Board versus Frequency S22 of Evaluation Board versus Frequency Temperature = +25°C Temperature = +25°C 2.8 3.0 2.6 2.8 2.6 2.4 2.4 Output VSWR Input VSWR 2.2 2.0 1.8 2.2 2.0 1.8 1.6 1.6 1.4 1.4 Vcc=3V Vcc=3.0V 1.2 1.2 Vcc=5V Vcc=5.0V 1.0 1.0 0.0 500.0 1000.0 1500.0 Frequency (MHz) 4-46 2000.0 2500.0 0.0 500.0 1000.0 1500.0 2000.0 2500.0 Frequency (MHz) Rev A8 010717