RF3100-3K 2 3V 1700MHZ LINEAR AMPLIFIER MODULE Typical Applications • 3V CDMA Korean-PCS Handsets Chipsets 2 POWER AMPLIFIERS • Spread-Spectrum Systems • Designed for Compatibility with Qualcomm Product Description The RF3100-3K is a high-power, high-efficiency linear amplifier IC targeting 3V hand-held systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dualmode 3V CDMA hand-held digital cellular equipment, spread-spectrum systems, and other applications in the 1750MHz to 1780MHz band. The RF3100-3K has a digital control line for low power application to reduce the current drain. The device is self-contained with 50Ω input and output that is matched to obtain optimum power, efficiency, and linearity characteristics. The module is an ultra-small 6mmx6mm land grid array with backside ground. Optimum Technology Matching® Applied Si BJT Si Bi-CMOS ü GaAs HBT GaAs MESFET SiGe HBT Si CMOS 3.000 0.100 0.800 sq typ 1.700 4.390 6.0 sq 2.500 0.100 NOTE: Nominal thickness, 1.55 mm. 0.600 Dimensions in mm. Package Style: LGM (6mmx6mm) Features • Input/Output Internally Matched@50 Ω VCC1 1 7 GND • Single 3V Supply • 28dBm Linear Output Power • -141dBm/Hz Noise Power RF IN 2 6 RF OUT • 35% Linear Efficiency • 45mA Idle Current (Low Power Mode) 3 4 5 VCC2 VMODE VREG Ordering Information RF3100-3K 3V 1700MHz Linear Amplifier Module RF3100-3K PCBA Fully Assembled Evaluation Board Functional Block Diagram Rev A3 011017 RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com 2-273 RF3100-3K Absolute Maximum Ratings Parameter Supply Voltage (RF off) Supply Voltage (POUT ≤29dBm) Control Voltage (VREG) POWER AMPLIFIERS 2 Mode Voltage (VMODE) Input RF Power Operating Case Temperature Storage Temperature Parameter Rating Unit +8.0 +5.2 +4.2 VDC VDC VDC +3.5 +10 -30 to +110 -30 to +150 VDC dBm °C °C Specification Min. Typ. Max. Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Unit Typical Performance at VCC =3.2V, VREG =2.85V, TAMB =25°C, Frequency=1750MHz to 1780MHz (unless otherwise specified) High Power State (VMODE Low) Frequency Range Linear Gain Second Harmonic Third Harmonic Maximum Linear Output Power (CDMA Modulation) Total Linear Efficiency 1750 25.5 1780 MHz dB dBc dBc dBm -46 -44.5 dBc ACPR @1.25MHz, POUT =28dBm -60 <2:1 -57.5 dBc ACPR @2.25MHz, POUT =28dBm 27.5 -49 -52 28 35 Adjacent Channel Power Rejection Input VSWR Output VSWR % 10:1 6:1 Noise Power -141 dBm/Hz Low Power State (VMODE High) Frequency Range Linear Gain Second Harmonic Third Harmonic Maximum Linear Output Power (CDMA Modulation) Adjacent Channel Power Rejection Input VSWR Output VSWR 2-274 Condition 1750 17 POUT =28dBm No damage. No oscillations. >-70dBc At 90MHz offset. Typical Performance at VCC =3.2V, VREG =2.85V, TAMB =25°C, Frequency=1750MHz to 1780MHz (unless otherwise specified) 1780 MHz dB dBc dBc dBm -52 -46.5 dBc ACPR @1.25MHz -66 <2:1 -61 dBc ACPR @2.25MHz 20 -49 -52 16 10:1 6:1 No damage. No oscillations. >-70dBc Rev A3 011017 RF3100-3K Specification Min. Typ. Max. Unit TAMB =25°C DC Supply Supply Voltage Quiescent Current VREG Current VMODE Current Turn On/Off Time Total Current (Power Down) VREG “Low” Voltage VREG “High” Voltage VMODE “Low” Voltage VMODE “High” Voltage Rev A3 011017 Condition 3.2 3.7 170 50 6 5 0 2.8 0 2.0 2.85 4.2 240 80 10 1.5 6 10 0.5 2.9 0.5 3.0 V mA mA mA mA µs µA V V V V VMODE =Low, VREG =2.85V VMODE =High, VREG =2.85V 2 POWER AMPLIFIERS Parameter VREG =Low, VMODE =Low 2-275 Pin 1 Function VCC1 2 3 RF IN VREG 2 4 VMODE POWER AMPLIFIERS RF3100-3K 5 VCC2 6 RF OUT 7 GND Pkg Base GND 2-276 Description Interface Schematic First stage collector supply. A low frequency decoupling capacitor (e.g., 1µF) is required. RF input internally matched to 50Ω. This input is internally AC-coupled. Regulated voltage supply for amplifier bias. In Power Down mode, both VREG and VMODE need to be LOW (<0.5V). For nominal operation (High Power Mode), VMODE is set LOW. When set HIGH, devices are turned off to improve efficiency. Output stage collector supply. A low frequency decoupling capacitor (e.g., 1µF) is required. RF output internally matched to 50Ω. This output is internally AC-coupled. Ground connection. Connect to package base ground. For best performance, keep traces physically short and connect immediately to ground plane. Ground connection. The backside of the package should be soldered to a top side ground pad which is connected to the ground plane with multiple vias. The pad should have a short thermal path to the ground plane. Rev A3 011017 RF3100-3K Evaluation Board Schematic (Download Bill of Materials from www.rfmd.com.) VCC1 1 7 2 6 C2 4.7 µF 50 Ω µstrip 50 Ω µstrip VREG 3 C4 4.7 µF 4 C3 4.7 µF VMODE Rev A3 011017 2 J6 RF OUT POWER AMPLIFIERS J2 RF IN 5 C2 4.7 µF VCC2 2-277 RF3100-3K Evaluation Board Layout Board Size 1.5” x 1.5” Board Thickness 0.032”, Board Material FR-4, Multi-Layer, Ground Plane at 0.014” POWER AMPLIFIERS 2 2-278 Rev A3 011017