RF5187 Preliminary 2 LOW POWER LINEAR AMPLIFIER Typical Applications • PCS Communication Systems • Digital Communication Systems • Commercial and Consumer Systems 2 POWER AMPLIFIERS • 2.14GHz UMTS Systems Product Description The RF5187 is a highly-linear, low-power amplifier IC. It has been designed for use as the driver RF amplifier in applications such as W-CDMA basestations. The RF5187 requires an input and output matching network and power supply feed line. The device is manufactured on an advanced Gallium Arsenide HBT process, and is packaged in a 8-pin plastic package with a backside ground. 3.90 ± 0.10 -A0.43 ± 0.05 2.70 ± 0.10 4.90 ± 0.10 1.27 6.00 ± 0.20 1.40 ± 0.10 Dimensions in mm. 8° MAX 0° MIN 0.22 ± 0.03 0.60 ± 0.15 Optimum Technology Matching® Applied Si BJT Si Bi-CMOS ü GaAs HBT GaAs MESFET SiGe HBT Si CMOS Exposed Heat Sink 0.05 ± 0.05 1.70 ± 0.10 NOTES: 1. Shaded lead is pin 1. 2. Lead coplanarity - 0.10 with respect to datum "A". Package Style: SOIC-8 Slug Features • Single 3V to 6V Supply • 10dBm to 20dBm Ultra Linear Output Power RF IN 1 8 RF OUT RF IN 2 7 RF OUT PC 3 6 RF OUT • 14dB Gain at 2.14GHz • Power Down Mode BIAS CIRCUIT VCC 4 5 RF OUT PACKAGE BASE GND Functional Block Diagram Rev A1 011016 • 800MHz to 2500MHz Operation Ordering Information RF5187 RF5187 PCBA Low Power Linear Amplifier Fully Assembled Evaluation Board RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com 2-73 RF5187 Preliminary Absolute Maximum Ratings Parameter POWER AMPLIFIERS 2 Rating Unit Supply Voltage (VCC) Power Control Voltage (VPC) DC Supply Current Input RF Power Output Load VSWR -0.5 to +7.5 -0.5 to +5V 450 +20 20:1 VDC V mA dBm Operating Ambient Temperature Storage Temperature -40 to +85 -40 to +100 °C °C Parameter Specification Min. Typ. Max. Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Unit T=25°C, VCC =5.0V, ICC =240mA, Freq=2140MHz, POUT =13dBm Overall Frequency Range Output Power OP1dB Small Signal Gain Input VSWR Condition 800 2500 13 29 13 15 MHz dBm dBm dB 1.5:1 With external matching network. Two-Tone Specification Output IP3 42 43 45 dBm 2.7 0.2 3.1 0.5 3.7 V V 6 240 10 V mA µA 13dBm per tone. Power Control VPC Power Control “OFF” To obtain 240mA idle current. Threshold voltage at device input. Power Supply Power Supply Voltage Supply Current Power Down Current 2-74 5 2 VPC =0.2V Rev A1 011016 RF5187 Preliminary Function RF IN 2 3 RF IN PC 4 VCC 5 RF OUT 6 7 8 Pkg Base RF OUT RF OUT RF OUT GND Rev A1 011016 Description Interface Schematic RF input. This input is DC-coupled, so an external blocking capacitor is required if this pin is connected to a DC path. An optimum match to 50Ω is obtained by providing an external series capacitor of 2.4pF and then a shunt capacitor of 2.4pF. Those values are typical for 2140MHz; other values may be required for other frequencies. Same as pin 1. 2 Power control pin. For obtaining maximum performance, the voltage on this pin can be used to set correct bias level. In a typical application this is implemented by a feedback loop. The feedback can be based on the actual supply current of the device (i.e. maintaining a fixed current level), or it can be based on the RF output power level to maintain a fixed RF power level (Automatic Level Control loop). A voltage of 0.5V or lower brings the part into power down state. Power supply pin for the bias circuits. External low frequency bypass capacitors should be connected if no other low frequency decoupling is nearby. RF output and bias for the output stage. The power supply for the output transistor needs to be supplied to this pin. This can be done through a quarter-wavelength microstrip line that is RF-grounded at the other end, or through an RF inductor that supports the required DC currents. Optimum load impedance is achieved by providing a shunt capacitor of 1.8pF and a series capacitor of 3.3pF. Those values are typical for 2140MHz; other values may be required for other frequencies. Since there are several output pins available (which are internally connected), one pin can be used for connecting the bias, another for connecting a (third) harmonic trap filter, and the other pins for the RF output. Same as pin 5. POWER AMPLIFIERS Pin 1 Same as pin 5. Same as pin 5. Ground connection. The backside of the package should be connected to the ground plane through a short path (i.e., vias under the device may be required). 2-75 RF5187 Preliminary Evaluation Board Schematic 2140MHz Operation (Download Bill of Materials from www.rfmd.com.) J1 RF IN 2 50 Ω µstrip C2 2.4 pF POWER AMPLIFIERS C1 2.4 pF VPC C6 1000 pF 1 8 2 7 3 6 BIAS CIRCUIT 4 C3 3.3 pF 50 Ω µstrip C3 1.8 pF P1 5 P1-1 PACKAGE BASE L1 4.7 nH VCC VCC = 5 V f = 2140 MHz POUT = 13 dBm 2-76 P1-3 C8 1 uF C7 1000 pF J2 RF OUT C5 33 pF 1 VCC 2 GND 3 VPC CON3 Rev A1 011016 RF5187 Preliminary Evaluation Board Layout Board Size 1.5” x 1.0” Board Thickness 0.031”, Board Material FR-4 POWER AMPLIFIERS 2 Rev A1 011016 2-77 RF5187 Preliminary POWER AMPLIFIERS 2 2-78 Rev A1 011016