2SC2921 Application : Audio and General Purpose Unit VCB=160V 100max µA VEB=5V 100max µA IC=25mA 160min V VCEO 160 V IEBO VEBO 5 V V(BR)CEO IC 15 A hFE VCE=4V, IC=5A 50min∗ IB 4 A VCE(sat) IC=5A, IB=0.5A 2.0max V PC 150(Tc=25°C) W fT VCE=12V, IE=–2A 60typ MHz Tj 150 °C COB VCB=10V, f=1MHz 200typ pF –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) Tstg 24.4±0.2 9 a b 2 3 5.45±0.1 VCC (V) RL (Ω) IC (A) VB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) 60 12 5 –5 500 –500 0.2typ 1.5typ 0.35typ 0 0 1 2 3 0 4 0 0.2 0.4 0.6 0.8 h FE – I C Temperature Characteristics (Typical) (V C E =4V) 200 200 Typ 50 1 100 25˚C –30˚C 50 20 0.02 10 15 Transient Thermal Resistance D C Cur r ent Gai n h F E Collector Current I C (A) 0.1 0.5 1 Typ se 1000 P c – T a Derating 10 m s C 10 100 Collector-Emitter Voltage V C E (V) 200 nk 2 si 0.3 80 at Without Heatsink Natural Cooling he 1 ite 5 120 fin Collector Curre nt I C (A) D 0.5 –10 100 Time t(ms) In 20 –1 10 ith 40 Emitter Current I E (A) 1 W 60 –0.1 0.1 160 10 Cut- off F re quen cy f T (MH Z ) 10 15 0.5 40 80 60 5 1 Safe Operating Area (Single Pulse) (V C E =12V) 2 2 Collector Current I C (A) f T – I E Characteristics (Typical) 0 –0.02 1 θ j-a – t Characteristics M aximu m Power Di ssip ation P C (W) DC Cur rent Gain h F E 125˚C 0.5 0 Base-Emittor Voltage V B E (V) (V C E =4V) 0.1 0 1.0 Base Current I B (A) h FE – I C Characteristics (Typical) 10 0.02 p) I C =10A 5A Collector-Emitter Voltage V C E (V) 100 5 (Ca I B =20mA 1 em 50mA 5 10 eT 10 0m A 2 as A 15 0m A (C 200m 10 5˚C mA (V CE =4V) 12 Collector Current I C (A) 300 Weight : Approx 18.4g a. Type No. b. Lot No. 15 ˚C mA E 25 400 Collector Current I C (A) mA 3.0 +0.3 -0.1 5.45±0.1 C I C – V BE Temperature Characteristics (Typical) 3 θ j - a (˚ C/W) 500 V CE ( sa t ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t) (V ) A mA 75 0m 0 60 0.65 +0.2 -0.1 1.05 +0.2 -0.1 B I C – V CE Characteristics (Typical) 2.1 2-ø3.2±0.1 ■Typical Switching Characteristics (Common Emitter) 15 6.0±0.2 36.4±0.3 7 ICBO 2SC2921 p) V External Dimensions MT-200 (Ta=25°C) Conditions Tem 160 Symbol ˚C Unit VCBO ■Electrical Characteristics (Ta=25°C) 2SC2921 –30 Symbol 21.4±0.3 ■Absolute maximum ratings 4.0max Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1215) 20.0min LAPT 40 5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150 2000