2SA1726 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4512) VCB=–80V –10max µA V IEBO VEB=–6V –10max µA –6 V V(BR)CEO IC=–25mA –80min V –6 A hFE 50min∗ VCE=–4V, IC=–2A IB –3 A VCE(sat) IC=–2A, IB=–0.2A –0.5max V PC 50(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz Tj 150 °C COB VCB=–10V, f=1MHz 150typ pF –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 2.5 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) –30 10 –3 –10 5 –0.3 0.3 0.18typ 1.10typ 0.21typ I B =–10mA 0 0 –1 –2 –3 –4 I C =–6A –4A –2A 0 0 –0.5 Collector-Emitter Voltage V C E (V) –1.0 (V C E =–4V) 300 50 –1 –5 –6 125˚C Transient Thermal Resistance DC Cur rent Gain h FE 100 25˚C –30˚C 100 50 30 –0.02 –0.1 Collector Current I C (A) –0.5 mp) –1.5 –1 –5 –6 5 1 0.5 0.4 1 10 100 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =–12V) 50 –10 10 100ms Typ 0.5 1 Emitter Current I E (A) 5 6 –0.05 –3 –5 –10 –50 Collector-Emitter Voltage V C E (V) –100 nk 0.05 0.1 si 0 0.02 at –0.1 he Without Heatsink Natural Cooling 30 ite –0.5 fin –1 40 In 10 s DC ith 20 m W Collector Curr ent I C (A) –5 Ma xim um Powe r Dissipation P C (W) –20 30 Cu t-of f Fr eque ncy f T (MH Z ) DC Curr ent Gain h FE Typ –1 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 300 –0.5 –0.5 0 Base-Emittor Voltage V B E (V) (V C E =–4V) –0.1 0 –1.5 Base Current I B (A) h FE – I C Characteristics (Typical) 30 –0.02 –2 e Te –1 (Cas –20mA –2 –4 p) –30mA –2 Tem –50mA (Ca –4 ˚C A –8 0m A 125 –1 00 m (V CE =–4V) –6 –3 A Collector Current I C (A) –1 I C – V BE Temperature Characteristics (Typical) θ j- a ( ˚ C/ W) 0 V CE ( sa t ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V) Collector Current I C (A) –2 m 50 1.4 Weight : Approx 2.6g a. Type No. b. Lot No. se I C – V CE Characteristics (Typical) A 2.5 B C E VCC (V) 0m 1.35 0.65 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) –6 b –30˚C Tstg ø3.75±0.2 a ) IC emp VEBO 2.0±0.1 se T –80 4.8±0.2 (Ca VCEO 10.2±0.2 25˚C V 3.0±0.2 ICBO –80 16.0±0.7 Unit VCBO External Dimensions MT-25(TO220) (Ta=25°C) 8.8±0.2 Symbol 2SA1726 Unit 4.0max ■Electrical Characteristics Conditions 2SA1726 Symbol 12.0min ■Absolute maximum ratings (Ta=25°C) Application : Audio and General Purpose 20 10 2 0 Without Heatsink 0 25 50 75 100 1 25 150 Ambient Temperature Ta(˚C) 31