SANKEN 2SA1726

2SA1726
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4512)
VCB=–80V
–10max
µA
V
IEBO
VEB=–6V
–10max
µA
–6
V
V(BR)CEO
IC=–25mA
–80min
V
–6
A
hFE
50min∗
VCE=–4V, IC=–2A
IB
–3
A
VCE(sat)
IC=–2A, IB=–0.2A
–0.5max
V
PC
50(Tc=25°C)
W
fT
VCE=–12V, IE=0.5A
20typ
MHz
Tj
150
°C
COB
VCB=–10V, f=1MHz
150typ
pF
–55 to +150
°C
∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
2.5
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
tf
(µs)
–30
10
–3
–10
5
–0.3
0.3
0.18typ
1.10typ
0.21typ
I B =–10mA
0
0
–1
–2
–3
–4
I C =–6A
–4A
–2A
0
0
–0.5
Collector-Emitter Voltage V C E (V)
–1.0
(V C E =–4V)
300
50
–1
–5 –6
125˚C
Transient Thermal Resistance
DC Cur rent Gain h FE
100
25˚C
–30˚C
100
50
30
–0.02
–0.1
Collector Current I C (A)
–0.5
mp)
–1.5
–1
–5 –6
5
1
0.5
0.4
1
10
100
1000 2000
Time t(ms)
Collector Current I C (A)
f T – I E Characteristics (Typical)
Safe Operating Area (Single Pulse)
P c – T a Derating
(V C E =–12V)
50
–10
10
100ms
Typ
0.5
1
Emitter Current I E (A)
5 6
–0.05
–3
–5
–10
–50
Collector-Emitter Voltage V C E (V)
–100
nk
0.05 0.1
si
0
0.02
at
–0.1
he
Without Heatsink
Natural Cooling
30
ite
–0.5
fin
–1
40
In
10
s
DC
ith
20
m
W
Collector Curr ent I C (A)
–5
Ma xim um Powe r Dissipation P C (W)
–20
30
Cu t-of f Fr eque ncy f T (MH Z )
DC Curr ent Gain h FE
Typ
–1
θ j-a – t Characteristics
h FE – I C Temperature Characteristics (Typical)
300
–0.5
–0.5
0
Base-Emittor Voltage V B E (V)
(V C E =–4V)
–0.1
0
–1.5
Base Current I B (A)
h FE – I C Characteristics (Typical)
30
–0.02
–2
e Te
–1
(Cas
–20mA
–2
–4
p)
–30mA
–2
Tem
–50mA
(Ca
–4
˚C
A
–8 0m A
125
–1 00 m
(V CE =–4V)
–6
–3
A
Collector Current I C (A)
–1
I C – V BE Temperature Characteristics (Typical)
θ j- a ( ˚ C/ W)
0
V CE ( sa t ) – I B Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at) (V)
Collector Current I C (A)
–2
m
50
1.4
Weight : Approx 2.6g
a. Type No.
b. Lot No.
se
I C – V CE Characteristics (Typical)
A
2.5
B C E
VCC
(V)
0m
1.35
0.65 +0.2
-0.1
■Typical Switching Characteristics (Common Emitter)
–6
b
–30˚C
Tstg
ø3.75±0.2
a
)
IC
emp
VEBO
2.0±0.1
se T
–80
4.8±0.2
(Ca
VCEO
10.2±0.2
25˚C
V
3.0±0.2
ICBO
–80
16.0±0.7
Unit
VCBO
External Dimensions MT-25(TO220)
(Ta=25°C)
8.8±0.2
Symbol
2SA1726
Unit
4.0max
■Electrical Characteristics
Conditions
2SA1726
Symbol
12.0min
■Absolute maximum ratings (Ta=25°C)
Application : Audio and General Purpose
20
10
2
0
Without Heatsink
0
25
50
75
100
1 25
150
Ambient Temperature Ta(˚C)
31