2SA1693 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4466) –10max µA V IEBO VEB=–6V –10max µA –6 V V(BR)CEO IC=–50mA –80min V –6 A hFE 50min∗ VCE=–4V, IC=–2A A VCE(sat) IC=–2A, IB=–0.2A –1.5max V 60(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz Tj 150 °C COB VCB=–10V, f=1MHz 150typ pF –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 20.0min –3 PC 5.45±0.1 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) –30 10 –3 –10 5 –0.3 0.3 0.18typ 1.10typ 0.21typ –20mA –2 I B =–10mA 0 0 –1 –2 –3 –4 –1 –4A –2A 0 0 –0.5 –1.0 (V C E =–4V) 300 100 50 125˚C Transient Thermal Resistance DC Cur rent Gain h FE Typ 25˚C –30˚C 100 50 30 –0.02 –5 –6 –0.1 Collector Current I C (A) –0.5 –2 –1 –5 –6 5 1 0.5 0.3 1 10 Collector Current I C (A) f T – I E Characteristics (Typical) 100 1000 2000 Time t(ms) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =–12V) 60 10 –10 Typ ite he at si nk Collector Curr ent I C (A) fin Without Heatsink Natural Cooling 40 In –1 –0.5 ith DC W 10 s 100ms –5 20 m M aximum Power Dissipa ti on P C ( W) –20 30 Cut -off Fre quen cy f T (M H Z ) DC Curr ent Gain h FE –1 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 300 –1 0 Base-Emittor Voltage V B E (V) (V C E =–4V) –0.5 0 –1.5 Base Current I B (A) h FE – I C Characteristics (Typical) –0.1 –2 I C =–6A Collector-Emitter Voltage V C E (V) 30 –0.02 –4 ) –30mA –2 e Te mp) e Te mp) –50mA Cas –4 ˚C ( –8 0m A 125 –1 00 m A (V C E =–4V) –6 –3 mA Collector Current I C (A) – 0 15 1.4 E I C – V BE Temperature Characteristics (Typical) θ j- a ( ˚ C/W) 0 A C Weight : Approx 6.0g a. Type No. b. Lot No. V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) Collector Current I C (A) –2 0m 0.65 +0.2 -0.1 5.45±0.1 B VCC (V) –6 2 3 1.05 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) ø3.2±0.1 b IB Tstg a Temp IC 2.0±0.1 (Case VEBO 4.8±0.2 –30˚C –80 (Cas VCEO 15.6±0.4 9.6 25˚C V 1.8 VCB=–80V –80 5.0±0.2 ICBO VCBO 2.0 Unit Symbol External Dimensions MT-100(TO3P) (Ta=25°C) 2SA1693 Unit 4.0 ■Electrical Characteristics Conditions 2SA1693 19.9±0.3 Symbol 4.0max ■Absolute maximum ratings (Ta=25°C) Application : Audio and General Purpose 20 Without Heatsink 0 0.02 0.05 0.1 0.5 1 Emitter Current I E (A) 5 6 –0.1 –5 –10 –50 Collector-Emitter Voltage V C E (V) –100 3.5 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 27