SANKEN 2SA1673

2SA1673
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4388)
µA
V
IEBO
VEB=–6V
–10max
µA
V
V(BR)CEO
–15
A
hFE
–180min
IC=–50mA
VCE=–4V, IC=–3A
50min∗
V
–4
A
VCE(sat)
IC=–5A, IB=–0.5A
–2.0max
V
PC
85(Tc=25°C)
W
fT
VCE=–12V, IE=0.5A
20typ
MHz
150
°C
COB
VCB=–10V, f=1MHz
500typ
pF
–55 to +150
°C
Tj
Tstg
∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
tf
(µs)
–40
4
–10
–10
5
–1
1
0.6typ
0.9typ
0.2typ
–50mA
–5
I B =–20mA
0
0
–1
–2
–3
–1
I C =–10A
0
–4
0
–0.5
–1.0
–1.5
h FE – I C Temperature Characteristics (Typical)
(V C E =–4V)
200
Typ
100
50
125˚C
25˚C
100
–30˚C
50
20
–0.02
–5 –10 –15
f T – I E Characteristics (Typical)
–0.1
–0.5
–1
–5
–10 –15
1
10
100
P c – T a Derating
m
0m
s
s
s
C
–10
–100
Collector-Emitter Voltage V C E (V)
–200
nk
–0.1
–3
si
10
at
–0.2
he
Without Heatsink
Natural Cooling
ite
–1
60
fin
–2
80
In
Collecto r Cur rent I C (A)
D
–5
–0.5
1000 2000
Time t(ms)
ith
10
26
0.1
W
20
Emitter Current I E (A)
0.5
M aximu m Power Dissip ation P C (W)
10
10
–10
Typ
1
1
100
3m
0.1
3
–40
30
–2
θ j-a – t Characteristics
Safe Operating Area (Single Pulse)
(V C E =–12V)
0
0.02
–1
Collector Current I C (A)
Collector Current I C (A)
Cut- off F req uency f T (MH Z )
Transient Thermal Resistance
DC Cur rent Gain h FE
DC Cur rent Gain h F E
300
–1
0
Base-Emittor Voltage V B E (V)
(V C E =–4V)
–0.5
0
–2.0
Base Current I B (A)
h FE – I C Characteristics (Typical)
–0.1
–5
–5A
Collector-Emitter Voltage V C E (V)
10
–0.02
–10
mp)
Temp
)
–0 .1 A
–2
(V C E =–4V)
e Te
A
E
–15
Cas
– 0 .2
–10
C
Weight : Approx 6.5g
a. Type No.
b. Lot No.
– 3
˚C (
A
3.35
I C – V BE Temperature Characteristics (Typical)
125
–0.4
0.65 +0.2
-0.1
1.5
V CE ( sat ) – I B Characteristics (Typical)
Collector Current I C (A)
6A
4.4
B
θ j - a (˚ C/W)
–0.
Collector-Emitter Saturation Voltage V C E (s at) (V )
Collector Current I C (A)
A
5.45±0.1
1.5
RL
(Ω)
–1
0.8
2.15
1.05 +0.2
-0.1
VCC
(V)
–15
1.75
5.45±0.1
■Typical Switching Characteristics (Common Emitter)
I C – V CE Characteristics (Typical)
3.45 ±0.2
ø3.3±0.2
a
b
16.2
IB
5.5±0.2
3.0
–6
IC
15.6±0.2
23.0±0.3
VEBO
0.8±0.2
–10max
5.5
VCB=–180V
1.6
–180
ICBO
3.3
VCEO
Unit
p)
V
2SA1673
ase Tem
–180
External Dimensions FM100(TO3PF)
(Ta=25°C)
Conditions
Symbol
–30˚C (C
VCBO
■Electrical Characteristics
(Case
Unit
25˚C
2SA1673
Symbol
9.5±0.2
■Absolute maximum ratings (Ta=25°C)
Application : Audio and General Purpose
40
20
3.5
0
Without Heatsink
0
25
50
75
100
125
Ambient Temperature Ta(˚C)
150