2SC3856 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1492) Conditions 2SC3856 Unit V ICBO VCB=200V 100max µA VCEO 180 V IEBO VEB=6V 100max µA IC=50mA 180min V 6 V V(BR)CEO IC 15 A hFE VCE=4V, IC=3A 50min∗ IB 4 A VCE(sat) IC=5A, IB=0.5A 2.0max V PC 130(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ MHz Tj 150 °C COB VCB=10V, f=1MHz 300typ pF –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 19.9±0.3 VEBO 20.0min VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 40 4 10 10 –5 1 –1 0.5typ 1.8typ 0.6typ 0 1 0 2 3 0 4 0 0.5 1.0 1.5 h FE – I C Temperature Characteristics (Typical) (V C E =4V) 300 200 5 100 25˚C 50 –30˚C 20 0.02 10 15 Collector Current I C (A) 0.1 0.5 f T – I E Characteristics (Typical) 1 5 10 15 10 Typ 0.1 1 10 P c – T a Derating s s C 5 he at si nk Without Heatsink Natural Cooling ite 1 0.5 100 fin Collect or Cur ren t I C (A) 130 s In 10 1000 2000 ith 20 D 0m 100 Time t(ms) W 10 3m m Temp) 0.5 40 10 (Case 1 Safe Operating Area (Single Pulse) 30 2 3 Collector Current I C (A) (V C E =12V) mp) e Te (Cas 1 θ j-a – t Characteristics Ma xim um Powe r Dissipat io n P C (W) 1 Transient Thermal Resistance DC Curr ent Gain h FE Typ 50 Cu t-of f Fr equen cy f T (MH Z ) D C Cur r ent Gai n h F E 125˚C 0.5 0 Base-Emittor Voltage V B E (V) (V C E =4V) 0.1 0 2.0 Base Current I B (A) h FE – I C Characteristics (Typical) 20 0.02 mp) I C =10A 5A Collector-Emitter Voltage V C E (V) 100 5 –30˚C I B =20mA 1 e Te 50mA 5 10 Cas 100 mA 2 ˚C ( 20 0m A 10 (V CE =4V) 125 A 1.4 E 15 Collector Current I C (A) 300m 5.45±0.1 C I C – V BE Temperature Characteristics (Typical) 3 θ j - a (˚C /W) 5 A 0.65 +0.2 -0.1 Weight : Approx 6.0g a. Type No. b. Lot No. V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V CE(s a t) (V ) 1A Collector Current I C (A) 70 m 00 2 3 B IC (A) A ø3.2±0.1 5.45±0.1 RL (Ω) 0m 2.0±0.1 1.05 +0.2 -0.1 VCC (V) I C – V CE Characteristics (Typical) 4.8±0.2 b ■Typical Switching Characteristics (Common Emitter) 15 a 25˚C Tstg 15.6±0.4 9.6 1.8 Unit 200 2.0 2SC3856 VCBO 5.0±0.2 Symbol External Dimensions MT-100(TO3P) (Ta=25°C) 4.0 Symbol ■Electrical Characteristics 4.0max ■Absolute maximum ratings (Ta=25°C) Application : Audio and General Purpose 50 Without Heatsink 0 –0.02 –0.1 –1 Emitter Current I E (A) 78 –10 0.1 3 10 100 Collector-Emitter Voltage V C E (V) 200 3.5 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150