SANKEN 2SC4512

2SC4512
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1726)
Conditions
2SC4512
Unit
V
ICBO
VCB=120V
10max
µA
VCEO
80
V
IEBO
VEB=6V
10max
µA
VEBO
6
V
V(BR)CEO
IC=25mA
80min
V
IC
6
A
hFE
VCE=4V, IC=2A
50min
10.2±0.2
3
A
VCE(sat)
IC=5A, IB=0.2A
0.5max
V
PC
50(Tc=25°C)
W
fT
VCE=12V, IE=–0.5A
20typ
MHz
Tj
150
°C
COB
VCB=10V, f=1MHz
110typ
pF
–55 to +150
°C
∗hFE Rank
2.5
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
tf
(µs)
30
10
3
10
–5
0.3
–0.3
0.16typ
2.60typ
0.34typ
I B =10mA
0
0
1
2
3
1
I C =6A
2A
0
4
0
0.5
1.0
h FE – I C Temperature Characteristics (Typical)
(V C E =4V)
300
200
0.5
1
100
25˚C
–30˚C
50
20
0.02
56
Transient Thermal Resistance
DC Cur rent Gain h FE
Typ
50
0.1
Collector Current I C (A)
1
0.5
2
1
56
θ j-a – t Characteristics
5
1
0.5
0.4
1
10
100
1000 2000
Time t(ms)
Collector Current I C (A)
f T – I E Characteristics (Typical)
Safe Operating Area (Single Pulse)
P c – T a Derating
(V C E =12V)
20
50
10
10
100ms
5
m
s
–0.1
–1
Emitter Current I E (A)
–6
0.05
3
5
10
50
Collector-Emitter Voltage V C E (V)
100
nk
0
–0.02
si
0.1
at
Without Heatsink
Natural Cooling
he
0.5
30
ite
10
1
fin
20
40
In
Typ
DC
ith
Collector Curre nt I C ( A)
30
W
Ma xim um Powe r Dissipation P C (W)
40
Cu t-off Fre quen cy f T (M H Z )
DC Curr ent Gain h F E
125˚C
0.1
0
Base-Emittor Voltage V B E (V)
(V C E =4V)
30
0.02
0
1.5
Base Current I B (A)
h FE – I C Characteristics (Typical)
)
4A
Collector-Emitter Voltage V C E (V)
100
2
Temp
20mA
2
4
(Case
30mA
2
–30˚C
50 mA
4
(V CE =4V)
6
3
Cas
e Te
mp
(Cas
e Tem )
p)
A
80m
˚C (
A
125
1
m
00
Collector Current I C (A)
A
I C – V BE Temperature Characteristics (Typical)
θ j - a (˚ C/W)
15
0m
1.4
Weight : Approx 2.6g
a. Type No.
b. Lot No.
V CE ( sat ) – I B Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at) (V )
Collector Current I C (A)
20
A
2.5
B C E
VCC
(V)
0m
1.35
0.65 +0.2
-0.1
■Typical Switching Characteristics (Common Emitter)
6
b
O(50 to100), P(70 to140), Y(90 to180)
I C – V CE Characteristics (Typical)
2.0±0.1
ø3.75±0.2
a
25˚C
Tstg
12.0min
IB
4.8±0.2
3.0±0.2
Unit
120
16.0±0.7
2SC4512
VCBO
Symbol
External Dimensions MT-25(TO220)
(Ta=25°C)
8.8±0.2
Symbol
■Electrical Characteristics
4.0max
■Absolute maximum ratings (Ta=25°C)
Application : Audio and General Purpose
20
10
2
0
Without Heatsink
0
25
50
75
100
125
150
Ambient Temperature Ta(˚C)
111