SANKEN 2SA1215

2SA1215
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2921)
■Electrical Characteristics
ICBO
2SA1215
Unit
VCB=–160V
–100max
µA
36.4±0.3
24.4±0.2
VEB=–5V
–100max
µA
IC=–25mA
–160min
V
VCEO
–160
V
IEBO
VEBO
–5
V
V(BR)CEO
IC
–15
A
hFE
VCE=–4V, IC=–5A
50min∗
IB
–4
A
VCE(sat)
IC=–5A, IB=–0.5A
–2.0max
V
PC
150(Tc=25°C)
W
fT
VCE=–12V, IE=2A
50typ
MHz
Tj
150
°C
COB
VCB=–10V, f=1MHz
400typ
pF
–55 to +150
°C
∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
2-ø3.2±0.1
7
a
b
5.45±0.1
VCC
(V)
RL
(Ω)
IC
(A)
VB2
(V)
IB1
(mA)
IB2
(mA)
ton
(µs)
tstg
(µs)
tf
(µs)
–60
12
–5
5
–500
500
0.25typ
0.85typ
0.2typ
0
–1
0
–2
–3
0
–4
0
–0.2
–0.4
–0.6
–0.8
(V C E =–4V)
200
25˚C
100
–30˚C
50
30
–0.02
–5 –10 –15
Transient Thermal Resistance
DC Curr ent Gain h FE
Typ
50
Collector Current I C (A)
–0.1
–0.5
)
p)
mp)
e Te
–2
–1
–5
–10 –15
em
2
1
0.5
0.1
1
10
Collector Current I C (A)
f T – I E Characteristics (Typical)
100
1000 2000
Time t(ms)
Safe Operating Area (Single Pulse)
P c – T a Derating
(V C E =–12V)
160
10
m
C
–5
si
nk
Without Heatsink
Natural Cooling
at
–0.5
80
he
–1
120
ite
20
D
fin
40
–10
In
Collector Curr ent I C (A)
p
ith
Ty
s
60
W
Ma xim um Powe r Dissipat io n P C (W)
–40
80
Cut- off F req uency f T ( MH Z )
DC Curr ent Gain h FE
125˚C
–1
–1
θ j-a – t Characteristics
h FE – I C Temperature Characteristics (Typical)
200
–0.5
0
Base-Emittor Voltage V B E (V)
(V C E =–4V)
–0.1
0
–1.0
Base Current I B (A)
h FE – I C Characteristics (Typical)
10
–0.02
eT
–5A
Collector-Emitter Voltage V C E (V)
100
–5
Cas
I C =–10A
Cas
–1
˚C (
I B =–20mA
Weight : Approx 18.4g
a. Type No.
b. Lot No.
–10
˚C (
–50mA
–4
E
(V C E =–4V)
125
–10 0mA
–8
–2
θ j- a ( ˚C/W)
Collector Current I C (A)
mA
–1 50 m A
C
–15
Collector Current I C (A)
–200
–12
3.0 +0.3
-0.1
I C – V BE Temperature Characteristics (Typical)
–3
Collector-Emitter Saturation Voltage V C E (s at) (V )
A
A
A
m
A
0m 0m 0m
0m
50 –60 –50 –40
–30
–7
A
0.65 +0.2
-0.1
5.45±0.1
B
V CE ( sat ) – I B Characteristics (Typical)
–16
2
3
1.05 +0.2
-0.1
■Typical Switching Characteristics (Common Emitter)
I C – V CE Characteristics (Typical)
9
21.4±0.3
20.0min
Tstg
6.0±0.2
2.1
–30
V
External Dimensions MT-200
(Ta=25°C)
Conditions
emp
–160
VCBO
Symbol
se T
Unit
(Ca
2SA1215
25˚C
■Absolute maximum ratings (Ta=25°C)
Symbol
Application : Audio and General Purpose
4.0max
LAPT
40
Without Heatsink
0
0.02
0.1
1
Emitter Current I E (A)
12
10
–0.2
–2
–10
–100
Collector-Emitter Voltage V C E (V)
–200
5
0
0
25
50
75
100
125
Ambient Temperature Ta(˚C)
150