SANKEN 2SC4466

2SC4466
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1693)
IEBO
VEBO
6
V
V(BR)CEO
IC
6
A
hFE
µA
VEB=6V
10max
µA
V
IC=50mA
80min
VCE=4V, IC=2A
50min∗
a
A
VCE(sat)
IC=2A, IB=0.2A
1.5max
V
60(Tc=25°C)
W
fT
VCE=12V, IE=–0.5A
20typ
MHz
Tj
150
°C
COB
VCB=10V, f=1MHz
110typ
pF
–55 to +150
°C
∗hFE Rank
20.0min
3
PC
2
3
1.05 +0.2
-0.1
■Typical Switching Characteristics (Common Emitter)
5.45±0.1
VCC
(V)
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
tf
(µs)
30
10
3
10
–5
0.3
–0.3
0.16typ
2.60typ
0.34typ
I B =10mA
0
0
1
2
3
2A
0
4
0
0.5
1.0
(V C E =4V)
200
DC Cur rent Gain h FE
125˚C
Typ
50
1
100
25˚C
–30˚C
50
20
0.02
56
0.1
Collector Current I C (A)
0.5
1
56
5
1
2
0.5
0.3
1
10
100
1000 2000
Time t(ms)
Collector Current I C (A)
f T – I E Characteristics (Typical)
Safe Operating Area (Single Pulse)
P c – T a Derating
(V C E =12V)
20
60
10
si
nk
Collector Curr ent I C ( A)
at
Without Heatsink
Natural Cooling
he
0.5
ite
1
40
fin
10
DC
In
20
5
ith
Typ
1m
s
ms
0m
s
10
W
30
10
M aximum Power Dissipa ti on P C (W)
40
Cu t-off Fre quen cy f T (M H Z )
DC Curr ent Gain h F E
1
θ j-a – t Characteristics
h FE – I C Temperature Characteristics (Typical)
300
0.5
0
Base-Emittor Voltage V B E (V)
(V C E =4V)
0.1
0
1.5
Base Current I B (A)
h FE – I C Characteristics (Typical)
30
0.02
mp)
p)
I C =6A
4A
Collector-Emitter Voltage V C E (V)
100
2
e Tem
1
(Cas
20mA
2
4
25˚C
30mA
2
e Te
50 mA
4
(V C E =4V)
6
3
Cas
A
80m
˚C (
A
125
1
m
00
Collector Current I C (A)
A
θ j - a (˚ C/W)
15
0m
1.4
E
I C – V BE Temperature Characteristics (Typical)
Transient Thermal Resistance
A
C
Weight : Approx 6.0g
a. Type No.
b. Lot No.
V CE ( sat ) – I B Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at) (V )
Collector Current I C (A)
20
0m
0.65 +0.2
-0.1
5.45±0.1
B
6
2.0±0.1
ø3.2±0.1
O(50 to100), P(70 to140), Y(90 to180)
I C – V CE Characteristics (Typical)
4.8±0.2
b
IB
Tstg
15.6±0.4
9.6
1.8
V
10max
5.0±0.2
80
Unit
VCB=120V
)
VCEO
Conditions
Temp
ICBO
(Case
V
–30˚C
120
2.0
Unit
VCBO
External Dimensions MT-100(TO3P)
(Ta=25°C)
2SC4466
19.9±0.3
Symbol
4.0
■Electrical Characteristics
2SC4466
Symbol
4.0max
■Absolute maximum ratings (Ta=25°C)
Application : Audio and General Purpose
20
Without Heatsink
0
–0.02
0.1
–0.1
–1
Emitter C urrent I E (A)
106
–6
5
10
50
Collector-Emitter Voltage V C E (V)
100
3.5
0
0
25
50
75
100
125
Ambient Temperature Ta(˚C)
150