SFH6942 Vishay Semiconductors Optocoupler, Phototransistor Output, SOT-223/10, Quad Channel Features • Transistor Optocoupler in SOT-223/10 Package • End Stackable, 1.27 mm Spacing e3 • Low Current Input • Very High CTR, 150 % Typical at IF = 1 mA, VCE = 5 V • Good CTR Linearity Versus Forward Current • Minor CTR Degradation • High Collector-Emitter Voltage, VCEO=70 V • Low Coupling Capacitance • • • • High Common Mode Transient Immunity Isolation Test Voltage: 1768 VRMS Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Agency Approvals • UL1577, File No. E52744 System Code V • CSA 93751 Applications • • • • Telecommunication SMT PCMCIA Instrumentation A1 A2 Com. C3 A4 10 E1 9 E2 8 Com. C 7 E3 6 E4 A5 i179077 Description The SFH6942 is a four channel mini-optocoupler suitable for high density packaged PCB application. It has a minimum of 1768 VRMS isolation from input to output. The device consists of four phototransistors as detectors. Each channel is individually controlled. The optocoupler is housed in a SOT-223/10 package. All the cathodes of the input LEDs and all the collectors of the output transistors are common enabling a pin count reduction from 16 pins to 10 pins-a significant space savings as compared to four channels that are electrically isolated individually. Order Information Part Remarks SFH6942 CTR 63 - 500 %, SOT-10 SFH6942T CTR 63 - 500 %, SOT-10, Tape and Reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Parameter Test condition Reverse voltage DC forward current Surge forward current Total power dissipation Document Number 81290 Rev. 1.0, 20-Apr-06 tP ≤ 10 µs Symbol Value Unit VR 3 V IF 5 mA IFSM 100 mA Pdiss 10 mW www.vishay.com 1 SFH6942 Vishay Semiconductors Output Symbol Value Collector-emitter voltage Parameter Test condition VCE 70 V Emitter-collector voltage VEC 7 V Collector current Unit IC 10 mA IFSM 20 mA Pdiss 20 mW Symbol Value Unit VISO 1768 VRMS Creepage ≥4 mm Clearance ≥4 mm Comparative tracking index per DIN IEC 112/VDE0303, part 1 175 Surge collector current tP < 1 ms Total power dissipation Coupler Parameter Isolation test voltage (between emitter and detector, refer to climate DIN 40046, part 2, Nov. 74) Isolation resistance Test condition t = 1 sec. VIO = 100 V, Tamb = 25 °C RIO ≥ 1011 Ω VIO = 100 V, Tamb = 100 °C RIO ≥ Ω 1012 Storage temperature range Tstg - 55 to + 150 °C Ambient temperature range Tamb - 55 to + 100 °C Tj 100 °C Tsld 260 °C Junction temperature Soldering temperature, Dip soldering plus reflow soldering processes t = 10 sec. max Electrical Characteristics Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Test condition Symbol Min Typ. Forward voltage IF = 5 mA VF 1.25 Reverse current VR = 3 V IR 0.01 Capacitance VR = 0 V, f = 1 MHz Thermal resistance Max Unit 10 µA V CO 5 pF Rthja 1000 K/W Output Symbol Min Collector-emitter voltage Parameter ICE = 10 µA Test condition VCEO 70 V Emitter-collector voltage IEC = 10 µA VECO 7 V Collector-emitter capacitance VCE = 5 V, f = 1 MHz CCE 6 pF Rthja 500 K/W ICEO 50 nA Thermal resistance Collector-emitter leakage current www.vishay.com 2 VCE = 4 V Typ. Max Unit Document Number 81290 Rev. 1.0, 20-Apr-06 SFH6942 Vishay Semiconductors Coupler Parameter Test condition Coupling capacitance Symbol Min Typ. Max Unit 1 CC pF Current Transfer Ratio Parameter Coupling Transfer Ratio Part Symbol Min IF = 1 mA, VCE = 1.5 V Test condition SFH6942 IE/IF 63 IF = 0.5 mA, VCC = 5 V SFH6942 IE/IF 78 Typ. 100 Max Unit 200 % % Switching Characteristics Test condition Symbol Turn-on time Parameter IE = 2 mA, RE = 100 Ω, VCC = 5 V ton Min Typ. 3 Max Unit μs Rise time IE = 2 mA, RE = 100 Ω, VCC = 5 V tr 2.6 μs Turn-off time IE = 2 mA, RE = 100 Ω, VCC = 5 V toff 3.1 μs Fall time IE = 2 mA, RE = 100 Ω, VCC = 5 V tf 2.8 μs Typical Characteristics Tamb = 25 °C, unless otherwise specified IF IF → VCC = 5 V V0 F = 10 KHz DF = 50 % VO IE = 2 mA ↓ RE = 100 Ω isfh6943_01 isfh6943_02 Figure 1. Switching times (typ.) Document Number 81290 Rev. 1.0, 20-Apr-06 tF tR tON tOFF Figure 2. Switching Waveform www.vishay.com 3 SFH6942 Vishay Semiconductors 103 101 IF = 0, ICEO = f (VCE) VF = f (IF) 2 -2 5° 101 ICEO/nA IF / mA 100 50 ° 25 ° 85 ° 10 10-1 100 10-1 10-2 10-3 10-2 0.8 1 VF/V 0.9 isfh6943_03 1.1 1.2 0 1.4 1.3 Figure 3. LED Current vs. LED Voltage 2.0 1.6 8 30 VCE/V 40 50 60 70 IF = f 7 6 1.2 5 1.0 4 IF/mA NCTR 1.4 20 Figure 6. Collector-Emitter Leakage Current (typ.) Normalized to IF = 1 mA, NCTR = f (IF ) VCE = 1.5 V IF = 1 mA 1.8 10 isfh6943_06 0.8 0.6 3 2 0.4 1 0.2 0 0 10 - 4 IF/A isfh6943_04 10 -3 10 0 -2 10 20 30 isfh6943_07 Figure 4. Non-Saturated Current Transfer 40 50 60 70 80 90 100 TA/°C Figure 7. Permissible Forward Current Diode 25.0 30 f = 1 MHz, CCE = f (VCE ) 22.5 20.0 Ptot = f (TA) 25 17.5 Transistor 20 15.0 15 CCE 10.0 Ptot/mW CCE /P F 12.5 7.5 5.0 Diode 10 5 2.5 0 0 10-2 10-1 100 101 VCE /V isfh6943_05 Figure 5. Transistor Capacitances (typ.) www.vishay.com 4 0 102 isfh6943_08 10 20 30 40 50 60 70 80 90 100 TA/°C Figure 8. Permissible Power Dissipation Document Number 81290 Rev. 1.0, 20-Apr-06 SFH6942 Vishay Semiconductors 103 25 IF = 1 mA, VCC = 5 V, ton, tr, toff, tt = f (RL) 102 ICE = 1 (VCE, IF) ICE/mA tf ton t/us 20 IF = 5 mA 15 IF = 4 mA 10 IF = 3 mA toff 101 tr IF = 2 mA 5 IF = 1 mA 100 0 102 103 RL/OHM isfh6943_09 104 10-2 105 isfh6943_10 Figure 9. 100 10-1 101 102 VCE/V Figure 10. Transistor Output Characteristics Package Dimensions in Inches (mm) 10° 0.016 (0.41) 0.018 (0.46) 7° 0.256 ± 0.004 0.043 (6.50 ± 0.10) (1.09) 0.200 ± 0.005 (5.80 ± 0.13) 0.035 (0.90) 0.063 ± 0.004 (1.60 ± 0.10) 0.004(0.10) 0.138 ± 0.004 max. (3.51 ±0.10) 0.01 (0.25) R 0.020 ± 0.004 (0.51 ± 0.10) 10° 0°–7° 0.010R 7° (0.25) 45° 0.276 ± 0.008 (7.01 ± 0.20) 0.002 + 0.002 – 0.001 (0.05 + 0.05 – 0.03) R 0.005 (0.13) 0.020 (0.51) min. 0.010 (0.25) 0.053 (1.35) ISO Method A 0.024 (0.61) 0.026 (0.66) 0.050 (1.27) 0.040 (1.02) i178044 Document Number 81290 Rev. 1.0, 20-Apr-06 0.216 (5.49) 0.296 (7.52) www.vishay.com 5 SFH6942 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 6 Document Number 81290 Rev. 1.0, 20-Apr-06 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1