VISHAY ILQ32-X007

ILD32/ ILQ32
Vishay Semiconductors
Optocoupler, Photodarlington Output, High Gain (Dual, Quad
Channel)
Features
•
•
•
•
•
•
Isolation Test Voltage, 5300 VRMS
High Isolation Resistance, 1011 Ω Typical
Low Coupling Capacitance
Standard Plastic DIP Package
Lead-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Agency Approvals
• UL1577, File No. E52744 System Code H or J,
Double Protection
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
A 1
8 E
C 2
7 C
C 3
6 C
A 4
5 E
A 1
16 E
C 2
15 C
C 3
14 C
A 4
13 E
A
12 E
5
C 6
11 C
7
10 C
C
9
A 8
E
i179017
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Description
Pb
Pb-free
Order Information
The ILD32/ ILQ32 are optically coupled isolators with
a gallium arsenide infrared LED and a silicon photodarlington sensor. Switching can be achieved while
maintaining a high degree of isolation between driving
and load circuits.
These optocouplers can be used to replace reed and
mercury relays with advantages of long life, high
speed switching and elimination of magnetic fields.
Part
Remarks
ILD32
CTR > 500 %, DIP-8
ILQ32
CTR > 500 %, DIP-16
ILD32-X006
CTR > 500 %, DIP-8 400 mil (option 6)
ILD32-X007
CTR > 500 %, SMD-8 (option 7)
ILD32-X009
CTR > 500 %, SMD-8 (option 9)
ILQ32-X007
CTR > 500 %, SMD-8 (option 7)
ILQ32-X009
CTR > 500 %, SMD-8 (option 9)
For additional information on the available options refer to
Option Information.
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Peak reverse voltage
Forward continuous current
Power dissipation
Derate linearly from 25°C
Document Number 83650
Rev. 1.5, 26-Oct-04
Test condition
Symbol
Value
Unit
VR
3.0
V
IF
60
mA
Pdiss
100
mW
1.33
mW/°C
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ILD32/ ILQ32
Vishay Semiconductors
Output
Parameter
Test condition
Symbol
Value
Unit
BVCEO
30
V
IC
125
mA
Pdiss
150
mW
2.0
mW/°C
Collector-emitter breakdown
voltage
Collector (load) current
Power dissipation
Derate linearly from 25°C
Coupler
Parameter
Symbol
Value
Unit
VISO
5300
VRMS
Creepage
≥7
mm
Clearance
≥7
mm
Isolation test voltage
1)
Test condition
Part
t = 1.0 sec.
≥ 175
Comparative tracking index per
DIN IEC 112/VDE303, part 1
Isolation resistance
VIO = 500 V, Tamb = 25 °C
Derate linearly from 25 °C
1012
Ω
RIO
1011
Ω
ILD32
Ptot
400
mW
ILQ32
Ptot
VIO = 500 V, Tamb = 100 °C
Total dissipation
RIO
ILD32
ILQ32
500
mW
5.33
mW/°C
6.67
mW/°C
Storage temperature
Tstg
- 55 to + 150
°C
Operating temperature
Tamb
- 55 to + 100
°C
10
sec.
Lead soldering time at 260 °C
1)
between emitter and detector refer to standard climate 23 °C/50 %RH; DIN 50014
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Typ.
Max
Forward voltage
Parameter
IF = 10 mA
Test condition
Symbol
VF
Min
1.25
1.5
Unit
V
Reverse current
VR = 3.0 V
IR
0.1
100
pF
Capacitance
VR = 0 V
CO
25
pF
Output
Symbol
Min
Collector-emitter breakdown
voltage
Parameter
IC = 100 µA, IF = 0
BVCEO
30
Breakdown voltage emittercollector
IE = 100 µA
BCECO
5.0
Collector-emitter leakage
current
VCE = 10 V, IF = 0
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2
Test condition
ICEO
Typ.
Max
Unit
V
10
1.0
nA
100
nA
Document Number 83650
Rev. 1.5, 26-Oct-04
ILD32/ ILQ32
Vishay Semiconductors
Coupler
Parameter
Test condition
IC = 2.0 mA, IF = 8.0 mA
Collector emitter
Capacitance (input-output)
Symbol
Min
Typ.
Max
VCEsat
Unit
1.0
CIO
V
0.5
pF
Current Transfer Ratio
Parameter
Test condition
IF = 10 mA, VCE = 10 V
Current Transfer Ratio
Symbol
Min
CTR
500
Symbol
Min
Typ.
Max
Unit
%
Switching Characteristics
Parameter
Test condition
Typ.
Max
Unit
Turn-on time
VCC = 10 V, IF = 5.0 mA,
RL = 100 Ω
ton
15
µs
Turn-off time
VCC = 10 V, IF = 5.0 mA,
RL = 100 Ω
toff
30
µs
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
1.2
1. 3
NCTRce - Normalized CTR
VF - Forward Voltage - V
1.4
Ta = –55°C
1.2
Ta = 25°C
1.1
1.0
0.9
Ta = 85°C
0.8
1.0
0.8
.1
1
10
IF - Forward Current - mA
0.4
0.2
Vce =1V
1
10
100
1000
IF - LED Current - mA
100
iild32_01
Vce = 10 V
0.6
0.0
.1
0.7
Normalized to:
Vce = 10 V
IF = 10 mA
Ta = 25°C
iild32_02
Figure 1. Forward Voltage vs. Forward Current
Document Number 83650
Rev. 1.5, 26-Oct-04
Figure 2. Normalized Non-saturated and Saturated CTRCE vs.
LED Current
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3
ILD32/ ILQ32
Vishay Semiconductors
10
Normalized to:
Ta = 25°C
IF = 10 mA
Vce = 10 V
NIce - Normalized Ice
1
Vce = 10 V
IF
Vce = 1V
.1
VO
tD
tR
tPLH
.01
tPHL
.001
.1
tS
VTH=1.5 V
tF
100
10
1
IF - LED Current - mA
iild32_06
iild32_03
Figure 3. Normalized Non-Saturated and Saturated CollectorEmitter Current vs. LED Current
Figure 6. Switching Timing
tpLH -Low/High Propagation
Delay - µs
80
TA = 25°C, VCC = 10 V
Vth = 1.5 V
1 kΩ
VCC=10 V
60
F=10 KHz,
DF=50%
220 ıΩˇ
40
RL
VO
470 Ω
20
I F =5 mA
100 Ω
0
0
5
10
15
20
iild32_07
IF - LED Current - mA
iild32_04
Figure 4. Low to High Propagation Delay vs. Collector Load
Resistance and LED Current
Figure 7. Switching Schematic
tpHL -High/Low Propagation
Delay - µs
20
1kΩ
TA = 25°C
VCC = 10 V
Vth = 1.5 V
15
10
100Ω
5
0
0
5
10
15
20
IF - LED Current - mA
iild32_05
Figure 5. High to low Propagation Delay vs. Collector Load
Resistance and LED Current
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Document Number 83650
Rev. 1.5, 26-Oct-04
ILD32/ ILQ32
Vishay Semiconductors
Package Dimensions in Inches (mm)
pin one ID
4
3
2
1
5
6
7
8
.255 (6.48)
.268 (6.81)
ISO Method A
.379 (9.63)
.390 (9.91)
.030 (0.76)
.045 (1.14)
4° typ.
.300 (7.62)
typ.
.031 (0.79)
.130 (3.30)
.150 (3.81)
.050 (1.27)
.230(5.84)
.110 (2.79) .250(6.35)
.130 (3.30)
10°
.020 (.51 )
.035 (.89 )
.100 (2.54) typ.
.018 (.46)
.022 (.56)
3°–9°
.008 (.20)
.012 (.30)
i178006
Package Dimensions in Inches (mm)
pin one ID
8
7
6
5
4
3
2
1
.255 (6.48)
.265 (6.81)
9
10
11 12 13
14
15
16
ISO Method A
.779 (19.77 )
.790 (20.07)
.030 (.76)
.045 (1.14)
.300 (7.62)
typ.
.031(.79)
.130 (3.30)
.150 (3.81)
4°
.018 (.46)
.022 (.56)
.020(.51)
.035 (.89)
.100 (2.54)typ.
.050 (1.27)
10°
typ.
3°–9°
.008 (.20)
.012 (.30)
.110 (2.79)
.130 (3.30) .230 (5.84)
.250 (6.35)
i178007
Document Number 83650
Rev. 1.5, 26-Oct-04
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5
ILD32/ ILQ32
Vishay Semiconductors
Option 6
Option 7
.407 (10.36)
.391 (9.96)
.307 (7.8)
.291 (7.4)
.300 (7.62)
TYP.
Option 9
.375 (9.53)
.395 (10.03)
.300 (7.62)
ref.
.028 (0.7)
MIN.
.180 (4.6)
.160 (4.1) .0040 (.102)
.0098 (.249)
.315 (8.0)
MIN.
.014 (0.35)
.010 (0.25)
.400 (10.16)
.430 (10.92)
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6
.331 (8.4)
MIN.
.406 (10.3)
MAX.
.012 (.30) typ.
.020 (.51)
.040 (1.02)
.315 (8.00)
min.
15° max.
18450
Document Number 83650
Rev. 1.5, 26-Oct-04
ILD32/ ILQ32
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 83650
Rev. 1.5, 26-Oct-04
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Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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