MOS FET Array STA509A ■ ID — VDS Characteristics ID = 1A VDD 12V RL = 12Ω VGS = 5V RG1 = 50Ω, RG2 = 10Ω ISD = 6A, VGS = 0V 1.5 ±0.25 0.5 (2.54) ±0.15 0 9•2.54=22.86 C1.5 ±0.3 ±0.3 0 ±0.05 ±0.5 1 2 3 4 5 6 7 8 9 10 S G D G D G D G D S a) Type No. b) Lot No. (Unit: mm) 0.8 20 VGS = 4V ±0.2 1.0 ■ R DS (on) — I D Characteristics ■ ID — VGS Characteristics 6 b a VGS = 4V VDS = 10V 10 5 Ta = 150ºC VGS = 5V VGS = 10V 0.6 RDS (on) (Ω) 4 ID (A) 3 2 0.1 VGS = 3V 1 0 2 4 6 8 10 12 0.01 14 1 2 0.2 4 5 6 2 3 4 5 6 ■ I DR — VSD Characteristics 10 10 ID = 1A VDS = 10V 5 Re (yfs) (S) VGS = 4V typ. 0.4 0.3 VGS = 10V typ. 0.2 8 1 Ta = –55ºC 25ºC 150ºC 0.5 0.1 0.2 0.05 0.1 0 50 100 150 0.5 1 Ta = 150ºC 75ºC 25ºC –55ºC 6 4 2 0 6 0 0.2 0.4 0.6 ID (A) Tc (ºC) (Tc = 25ºC) 10 (o IT 1.4 Equivalent Circuit Diagram ED m 3 s ID (A) S IM 1.2 10 RD L n) 1.0 10 0µ s 1m s ID (pulse) max 5 0.8 VSD (V) ■ Safe Operating Area (single pulse) 5 7 9 1 2 0.5 0.1 0.5 1 1 5 10 VDS (V) 80 1 ID (A) ■ Re (yfs) — I D Characteristics 0.5 0 0 VGS (V) ■ R DS (on) — TC Characteristics RDS (on) (Ω) 3 25ºC 0.4 0 0 VDS (V) –50 75ºC –55ºC Ta = –55ºC 25ºC 75ºC 150ºC IDR (A) ID (A) 1 0 ±0.2 0.25 0.3 ±0.2 ±0.2 0.2 0.25 200 120 20 2.0 7.4 3.3 4.2 1.0 V µA µA V S Ω Ω pF pF pF µs µs µs µs V 4.0 1.0 1.0 VDS = 10V f = 1.0MHz VGS = 0V 25.25 57 ±1.0 100 2.5 ±0.15 Ciss Coss Crss t d (on) tr t d (off) tf VSD 52 1.2 RDS (ON) 47 9.0 ID = 1mA, VGS = 0V VGS = ±20V VDS = 40V, VGS = 0V VDS = 10V, ID = 250µA VDS = 10V, ID = 1.0A VGS = 10V, ID = 1.0A VGS = 4V, ID = 1.0A Unit max ±0.2 V(BR) DSS IGSS IDSS VTH Re (yfs) min ±0.2 Test Conditions External Dimensions STA 0.5 4 (Ta = 25ºC) 20 (Tc = 25ºC) EAS *2 40 mJ Tch ºC 150 Tstg ºC –55 to +150 *1 PW 100µs, duty 1% *2 VDD = 12V, L = 10mH, unclamped, RG = 10Ω PT Symbol (Ta=25ºC) Ratings typ 2.3 Electrical Characteristics Unit V V A A W W 11.3 Ratings 52±5 ±20 ±3 ±6 ±0.5 Symbol VDSS VGSS ID ID (pulse) *1 3.5 Absolute Maximum Ratings (Ta=25ºC) 50 4 6 8 10