Power Transistor Array STA335A ICBO IEBO VCEO hFE VCE (sat) Es/b (Ta=25ºC) Unit µA µA V Ratings 10max 10max 35±5 500min 0.5max 150min External Dimensions STA3 (LF400A) 20.2±0.2 V mJ b 9.0±0.2 Test Conditions VCB = 30V VEB = 6V IC = 25mA VCE = 4V, IC = 0.5A IC = 1A, IB = 5mA L = 10mH, single pulse a 0.5±0.15 Typical Switching Characteristics RL (Ω) 12 IC (A) 1 VBB1 (V) 10 VBB2 (V) –5 IB1 (mA) 5 7•2.54=17.78±0.25 IB2 (mA) 5 ton (µs) 1.3 tstg (µs) 4.7 tf (µs) 1.2 C1.5±0.5 1 2 C 3 B 4 E 5 E 6 B 7 C 4.0±0.2 VCC (V) 12 (2.54) 1.0±0.25 1.2±0.2 Tj Tstg Symbol 0.5±0.15 PT Electrical Characteristics Unit V V V A A W W ºC ºC 2.3±0.2 Ratings 35±5 35±5 6 3 1 2.5 (Ta=25ºC) 12 (Tc=25ºC) 150 –55 to +150 11.3±0.2 Symbol VCBO VCEO VEBO IC IB 4.7±0.5 Absolute Maximum Ratings (Ta=25ºC) 8 a) Type No. b) Lot No. (Unit: mm) A 6m VCE = 4V 4mA 3 VCE (sat) (V) 3mA 2 IC (A) 2mA IB =1mA 1 0 0 1 2 0.5 Ta = 125ºC 75ºC 25ºC –55ºC 0 0.002 3 0.01 0.05 0.1 (VCE = 4V) 20 1000 500 Ta = 125ºC 75ºC 25ºC –55ºC 0.5 1 3 tstg VCE = 12V IB1 = – IB2 = 5mA 1m tf 1 0.1 0.5 1 1 5 0.1 0.1 1 10 100 1000 5000 t (ms) Equivalent Circuit Diagram s W ith in fin ite 10 25 ºC ) 2 he at nk (A ll ci rc ui ts Withou t heat sink (A ll 0 3 at 0.5 50 op er 5 0.2 7 si PT (W) IC (a) Single pulse 5 15 0m 10 Characteristics ton 0.3 0.05 10 VCE (V) 1.5 0.5 0.5 s 5 j-a — t 10 5 m 2 ■ ■ PT — Ta Derating 10 5 1.0 VBE (V) 10 (per element) 1 0.5 Ic (A) ■ Safe Operating Area (single pulse) (T c= 0 20 IC (A) DC 0 0.4 (ºC/W) ton • tstg • tf (µS) hFE 5000 10 Ta = –55ºC 25ºC 75ºC 125ºC 1 ■ ton• tstg• t f — IC Characteristics (typ.) ■ hFE — IC Temperature Characteristics (typ.) 0.05 0.1 2 IB (A) VCE (V) 100 0.01 4 5mA IC (A) 15m A 8m (IC = 1A) 1 j-a A 10 m A 3 ■ IC — VBE Temperature Characteristics (typ.) ■ VCE (sat) — IB Temperature Characteristics ■ IC — VCE Characteristics (typ.) 0 e) circuits operat e) 50 100 6 4 5 150 Ta (ºC) 63