THYRISTOR MODULE PK(PD,PE)70FG UL;E76102 （M） Power Thyristor/Diode Module PK70FG series are designed for various rectifier circuits and power controls. For your circuit application, following internal connections and wide voltage ratings up to 1600V are available. and electrically isolated mounting base make your mechanical design easy. 92． ０ 2０． ０ 2０． ０ 2０． ０ １７． ５ ３． 5 ７． ５ 3． 5 Internal Configurations K G ２５． ０ 1600A 100A/μs ● dv/dt 1000V/μs ● di/dt １２． ０ ● IT(AV) 70A, IT(RMS) 110A, ITSM K２G２ ２-φ6． ０ M５×1０ A1K2 1 K1 G1 （A2） 3 2 1 （K2） A1K2 PK ２． ８ 4-＃１１０TAB K1 （A2） PE NAME PLATE ６． ５ MAX ２９． ０ 2 （K2） ４． ０ 3 K2 G2 １９． ５ K2 G2 １． ０ ３０±０ ． ５ （Applications） Various rectifiers AC/DC motor drives Heater controls Light dimmers Static switches ８０． ０±０． ２ K2 3 2 A1K2 1 （K2） K1 G1 （A2） Unit：A PD ■Maximum Ratings （Tj＝25℃ unless otherwise specified） Ratings Symbol Item PK70FG40 PD70FG40 PE70FG40 PK70FG80 PD70FG80 PE70FG80 PK70FG120 PD70FG120 PE70FG120 PK70FG160 PD70FG160 PE70FG160 Unit VRRM ＊Repetitive Peak Reverse Voltage 400 800 1200 1600 V VRSM ＊Non-Repetitive Peak Reverse Voltage 480 960 1300 1700 V VDRM ＊Repetitive Peak off-state Voltage 400 800 1200 1600 V Symbol Item IT（AV） ＊Average On-state Current IT（RMS） ＊R.M.S. On-state Current ITSM It 2 PGM PG（AV） 1 ／2 ＊I t Value for one cycle surge current 2 Cycle, 50/60HZ, Peak Value, non-repetitive Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current VFGM Peak Gate Voltage (Forward) VRGM Peak Gate Voltage (Reverse) di/dt VISO Critical Rate of Rise of On-state Current Tstg Single phase, half wave, 180°conduction, Tc＝84℃ ＊Surge On-state Current IFGM Tj Conditions Single phase, half wave, 180°conduction, Tc＝84℃ ＊Isolation Breakdown Voltage（R.M.S.） Ratings A 110 A 1460/1600 10660 A W 1 W 3 A 10 V 100 V A/μs 2500 V ＊Operating Junction Temperature −40 to ＋125 ℃ ＊Storage Temperature Mounting Torque A.C. 1minute A2S 10 5 IG＝100mA， VD＝1／2VDRM， di G /dt＝0.1A/μs Unit 70 −40 to ＋125 ℃ Mounting（M5） Recommended Value 1.5-2.5（15-25） 2.7（28） Terminal（M5） Recommended Value 1.5-2.5（15-25） 2.7（28） N･m （㎏f･B） 170 g Ratings Unit Mass Typical Value ■Electrical Characteristics Symbol Item IDRM Repetitive Peak off-state Current,max Tj＝125℃，VD＝VDRM 20 mA IRRM ＊Repetitive Peak Reverse Current,max Tj＝125℃，VD＝VDRM 20 mA VTM ＊On-state Voltage,max IT＝210A 1.6 V IGT Gate Trigger Current,max VD＝6V，IT＝1A 50 mA VGT Gate Trigger Voltage,max VD＝6V，IT＝1A 3 V Gate Non-Trigger Voltage,min Tj＝125℃，VD＝1／2VDRM 0.25 V Critical Rate of Rise of off-state Voltage,min Tj＝125℃，VD＝2／3VDRM 1000 V/μs Junction to case 0.37 ℃/W VGD dv/dt Rth（j-c）＊Thermal Impedance,max ＊mark：Thyristor and Diode part. No mark：Thyristor part 7 Conditions PK(PD,PE)70FG １００ Gate Characteristics １０００ VFGM（10V） １０ PG （ M ５ PG（ ２ ２５℃ １ AV ） （１ W 10 W ） ） ０． ５ ０． ２ On-State Voltage（V） ２０ IFGM（３A） Gate Voltage（V） ５０ ２０ ５００ ２００ １００ ５０ １００ ２００ ５００ １０００ ２０００ １０ ０． ５ ５０００１００００ Gate Current（mA） Surge On-State Current Rating （Non-Repetitive） １６００ Per One Element １２００ ２． ０ ２． ５ ０． ４ Transient Thermal Impedance ０． ３ ０． ２５ １０００ ８００ ６０HZ ５０HZ ４００ Junction to Case Per One Element ０． １ ０． ０５ Ｔ ｊ=２５℃ start ２ ０． ２ ０． １５ ６００ ０ １ １． ５ ０． ３５ １４００ ２００ １． ０ On-State Voltage（V） Transient Thermal Impedance θj-c（℃/W） Surge On-State Current（A） １８００ Ｔ ｊ=２５℃ Maximum ５０ ２０ VGD ０． １ １０ On-State Voltage max ５ １０ ２０ Time（cycles） ５０ １００ ０ ０． ００１０． ００２ ０． ００５０． ０１０． ０２ ０． ０５０． １ ０． ２ ０． ５ １ ２ Time t（sec） ５ １０ 8