SANREX AK90HB160

THYRISTOR MODULE
AK90HB120/160
UL;E76102
(M)
Power ThyristorModule AK90HB series are designed for various rectifier circuits and
power controls. For your circuit application. following internal connections and wide
voltage ratings up to 1,600V are available.
93.5max
(Applications)
AC/DC motor drives
Heater controls
Light dimmers
Static switches
80
2-φ6.5
2
1
K2
G2
3
K1
G1
13
26max
Isolated mounting base
● IT(AV)90A, IT(RMS)200A, ITSM 1100A
● di/dt 200 A/μs
● dv/dt 500V/μs
16.5
23
23
3-M5
110TAB
G2
K2
21
30max
Internal Configurations
A2・K1
3
1
A1K2
K1 G1
2
Unit:A
■Maximum Ratings
(Tj=25℃ unless otherwise specified)
Symbol
Item
VDRM
Repetitive Peak Off-State Voltage
Symbol
IT(AV)
Ratings
AK90GB120
1200
Item
Conditions
Single phase, half wave, 180°conduction, Tc:88℃
IT(RMS)
R.M.S. On-State Current
Tc:88℃
ITSM
Surge On-State Current
1/cycle,
2
It
Value for one cycle of surge current
It
2
V
Ratings
Average On-State Current
2
Unit
AK90GB160
1600
50Hz/60Hz, peak value, non-reqetitive
Unit
90
A
200
A
1650/1800
15000
A
A2S
PGM
Peak Gate Power Dissipation
10
W
PG(AV)
Average Gate Power Dissipation
3
W
IFGM
Peak Gate Current
3
A
VFGM
Peak Gate Voltage(Forward)
10
V
VRGM
Peak Gate Voltage(Reverse)
5
V
di/dt
VISO
Critical Rate of Rise of On-State Current
IG=100mA,Tj=25℃,VD=1/2VDRM,dIG/dt=0.1A/μs
Isolation Breakdown Voltage(R.M.S.)
A.C. 1 minute
2500
V
Tj
Operating Junction Temperature
−40 to +125
℃
Storage Temperature
Tstg
Mounting
Torque
200
A/μs
−40 to +125
℃
Mounting(M6) Recommended Value 2.5-3.9(25-40)
4.7(48)
Terminal(M5)
2.7(28)
N・m
(㎏f・B)
170
g
Ratings
Unit
Mass
Recommended Value 1.5-2.5(15-25)
Typical Value
■Electrical Characteristics
Symbol
Item
Conditions
IDRM
Repetitive Peak Off-State Current, max.
at VDRM, Single phase, half wave, Tj=125℃
VTM
Peak On-State Voltage, max.
On-State Current 270A, Tj=125℃ Inst. measurement
IGT/VGT
VGD
Gate Trigger Current/Voltage, max.
Non-Trigger Gate, Voltage. min.
Tj=25℃,IT=1A,VD=6V
Turn On Time, max.
IT=90A,IG=100mA,Tj=25℃,VD=1/2VDRM,dIG/dt=0.1A/μs
Critical Rate of Rise of Off-State Voltage, min.
Tj=125℃,VD=2/3VDRM,Exponential
Holding Current, typ.
Tj=25℃
Lutching Current, typ.
tgt
dv/dt
IH
IL
Rth(j-c) Thermal Impedance, max.
SanRex
Tj=125℃,VD=1/2VDRM
30
mA
1.40
V
100/2
0.25
mA/V
V
10
μs
500
V/μs
50
mA
Tj=25℃
100
mA
Junction to case, per 1/2 Module
0.30
Junction to case, per 1 Module
0.15
wave.
℃/W
®
50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: [email protected]
AK90HB120/160
Gate Characteristics
2
2
100
5
25℃ 125℃ −30℃
2
Maximum Gate Voltage that will not trigger any unit(0.25V)
On-State Current(A)
5
P
Po eak
we Ga
(
t
r
10 e
W
Ga
)
te
Po
we
(
r
3W
)
Peak Gate Current(3A)
Peak Forward Gate Voltag(10V)
Av
er
ag
e
101
2
102
5
2
5
103
Tj=125℃
102
5
2
101
5
ー1
10
101
2
2
2
5
1.
0
Gate Current(mA)
Average On-State Current Vs Power Dissipation
(Single phase half wave)
140
Allowable Case Temperature(℃)
200
Power Dissipation(W)
Per one element
Average On-State Current Vs Maximum Allowable
Case Temperature(Single phase half wave)
Per one element
2
。
360
100
θ=180゜
θ=120゜
θ=90゜
θ=60゜
θ=30゜
100
2
50
。
360
: Conduction Angle
0
20 40
: Conduction Angle
80
60
θ=30゜ θ=90゜
20
0
Transient Thermal Impedance θj-c(℃/W)
Surge On-State Current Rating
(Non-Repetitive)
40
60
80 100 120 140 160 180 200
Transient Thermal Impedance
0.
4
2000
Per one element
Tj=25℃ start
0.
3
1500
60Hz
100 2
5 101
Junction to Case
Per one element
0.
2
1000
50Hz
0.
1
400
0
1
2
5
10
20
50
100
Output Current
Conduction Angle 180°
W3
W1;Bidirectional connection
ld(Ar.m.s)
Id(RMS)
600
Rth:0.8C/W
Rth:0.6C/W
Rth:0.4C/W
Rth:0.2C/W
Rth:0.1C/W
450
300
W1
90
100
150
0
0 50 100150200250300
Output Current(A)
110
120
125
0 25 50 75 100125
Ambient Temperature(℃)
Allowable Case Temperature(℃)
Time(cycles)
Total Power Dissipation(W)
20
Average On-State Current(A)
Average On-State Current(A)
750
D.C.
θ=180゜
θ=60゜ θ=120゜
40
80 100 120 140 160 180 200
60
2.
0
120
D.C.
150
Surge On-State Current(A)
1.
5
On-State Voltage(V)
0
2
5 10ー3 2
5 10ー2 2
5 10ー1 2
Time t(sec)
W3;Three phase
bidiretional connection
5 100 RMS On-State Current Vs
Allowable Case Temperature
Rth:0.8C/W
Rth:0.6C/W
Rth:0.4C/W
Rth:0.2C/W
Rth:0.1C/W
100
Id(Ar.m.s.)
130
120
110
θ=30゜
θ=60゜1
00
θ=90゜
θ=120゜
90
θ=180゜
110
80
70
60
120
125
0 25 50 75 100125
Ambient Temperature(℃)
020 60 100 140 180 220
RMS On-State Current(A)
50
Allowable Case Temperature(℃)
Gate Voltage(V)
On-State Voltage max
5