THYRISTOR MODULE PK(PD,PE)250GB UL;E76102 （M） Power Thyristor/Diode Module PK250GB series are designed for various rectifier circuits and power controls. For your circuit application. following internal connections and wide voltage ratings up to 800V are available. 92 12 26 7 60 48 24 5 12 5 K1G1 K2G2 4-φ6（M5） Isolated mounting base ● IT（AV）250A, IT（RMS）390A, ITSM 5500A ● di/dt 200 A/μs ● dv/dt 500V/μs 2 18 Internal Configurations R8.0 M8×14 A1K2 2 1 （K2） K1 G1 （A2） K2 3 A1K2 2 1 （K2） K1 G1 （A2） K2 G2 3 A1K2 2 1 5 2 K2 G2 3 33 ♯110TAB （2.8.0.5T） 42max 34max （Applications） Various rectifiers AC/DC motor drives Heater controls Light dimmers Static switches 26 K1 （A2） （K2） 80±0.3 PK PD Unit：A PE ■Maximum Ratings Ratings Symbol Item PK250GB40 PE250GB40 PD250GB40 PK250GB80 PE250GB80 PD250GB80 Unit VRRM ＊Repetitive Peak Reverse Voltage 400 800 V VRSM ＊Non-Repetitive Peak Reverse Voltage 480 960 V VDRM Repetitive Peak Off-State Voltage 400 800 V Symbol Item IT（AV） ＊Average On-State Current Conditions Single phase, half wave, 180°conduction, Tc：72℃ IT（RMS） ＊R.M.S. On-State Current Single phase, half wave, 180°conduction, Tc：72℃ ITSM ＊Surge On-State Current 1／cycle, 2 ＊I t Value for one cycle of surge current It 2 2 50Hz/60Hz, peak Value, non-reqetitive Ratings Unit 250 A 390 A 5000/5500 125000 A A2S PGM Peak Gate Power Dissipation 10 W PG（AV） Average Gate Power Dissipation 3 W IFGM Peak Gate Current 3 A VFGM Peak Gate Voltage（Forward） 10 V VRGM Peak Gate Voltage（Reverse） 5 V di/dt VISO Tj Tstg IG＝100mA，Tj＝25℃，VD＝1／2VDRM，dIG/dt＝0.1A/μs 200 A/μs 2500 V ＊Operating Junction Temperature −40 to ＋125 ℃ ＊Storage Temperature −40 to ＋125 ℃ 2.7（28） 11（115） N･ｍ （㎏f･B） 510 g Ratings Unit Critical Rate of Rise of On-State Current ＊Isolation Breakdown Voltage （R.M.S.） A.C. 1 minute Mounting Torque Mounting（M5） Recommended Value 1.5-2.5（15-25） Terminal（M8） Recommended Value 8.8-10 （90-105） Typical Value Mass ■Electrical Characteristics Symbol Item IDRM Repetitive Peak Off-State Current, max. Conditions at VDRM, Single phase, half wave, Tj＝125℃ IRRM ＊Repetitive Peak Reverse Current, max. at VDRM, Single phase, half wave, Tj＝125℃ VTM ＊Peak On-State Voltage, max. On-State Current 750A, Tj＝125℃ Inst. measurement IGT/VGT VGD tgt dv/dt IH IL 50 mA 50 mA 1.60 V 100/3 0.25 mA/V V Gate Trigger Current/Voltage, max. Non-Trigger Gate, Voltage. min. Tj＝25℃，IT＝1A，VD＝6V Turn On Time, max. IT＝250A，IG＝100mA，Tj＝25℃，VD＝1／2VDRM，dIG/dt＝0.1A/μs Critical Rate of Rise of Off-State Voltage, min. Tj＝125℃，VD＝2／3VDRM，Exponential wave. Holding Current, typ. Tj＝25℃ Lutching Current, typ. Tj＝25℃ 100 mA Junction to case 0.14 ℃/W Rth（j-c）＊Thermal Impedance, max. Tj＝125℃，VD＝1／2VDRM 10 μs 500 V/μs 50 mA ＊mark：Thyristor and Diode part. No mark：Thyristor part SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: [email protected] ;; PK(PD,PE)250GB On-State Characteristics Gate Characteristics ２ ５ Av er ag e ２ Ga te Po we （ r ０ １０ 25℃ ５ Po we r 3W ） −30℃ 125℃ ２ Peak Gate Current（3A） P （ eak 10 G W at ） e On-State Current（A） Peak Forward Gate Voltage（10V） １０１ Maximum Gate Non-Trigger Voltage ２ １０３ ５ ２ １０２ ５ ２． ５ ３． ０ Average On-State Current Vs Maximum Allowable Case Temperature（Single phase half wave） １４０ D.C. Per one element １２０ θ＝180゜ ３００ θ＝30゜ 2 ２００ 。 360 １００ : Conduction Angle １００ ２００ 2 １００ θ＝90゜θ＝120゜ θ＝60゜ ０ ０ ３００ 。 360 : Conduction Angle ８０ ６０ θ＝30゜ θ＝60゜ θ＝90゜ θ＝120゜ θ＝180゜ ４０ ０ ４００ Transient Thermal Impedance θj-c（℃/W） Surge On-State Current Rating （Non-Repetitive） ０． ２ Surge On-State Current（A） Per one element Ｔ ｊ=２５℃ start ５０００ ４０００ 60Hz 50Hz ３０００ １０００ ２ ５ １０１ ２ ５ １０２ Time（cycles） W１；Bidirectional connection W3 Id（Ar.m.s.） B6 ２０００ ７０ ８０ １６００ Rth Rth Rth Rth Rth Rth B2 １２００ f-a:0.5℃/W f-a:0.4℃/W f-a:0.3℃/W f-a:0.2℃/W f-a:0.1℃/W f-a:0.05℃/W ９０ １００ W1 ８００ １１０ ４００ Conduction Angle θ 180° ０ ０ ２００ ４００ ６００ Output Current（A） ３００ ４００ Transient Thermal Impedance Maximum ０ ２０ ４０ ６０ ８０ １００１２０ １２０ １２５ Ambient Temperature（℃） Junction to Case Per one element ０ -３ １０ ２ ５ １０-２ ２ ５ １０-１ ２ Time t（sec） B２；Two Pluse bridge connection Allowable Case Temperature（℃） Output Current ２００ ０． １ ２０００ ０ ０ １０ １００ D.C. Average On-State Current（A） Average On-State Current（A） Total Power Dissipation（W） ２． ０ Average On-State Current Vs Power Dissipation （Single phase half wave） ４００ ２４００ １． ５ On-State Voltage（V） ５００ ６０００ １． ０ Gate Current（mA） Per one element Power Dissipation（W） ２ １０１ ０． ５ ５ Allowable Case Temperature（℃） ６００ １０２ ５ ２ ５ ２ −１ １０ １ １０ Tj＝125℃ １０３ ５ １００ ２ ５ １０１ B６；Six pulse bridge connection Ｗ３；Three phase bidiretional connection ７０ ７０ Id（Aav.） Id（Aav.） ８０ Rth Rth Rth Rth Rth Rth f-a:0.5℃/W ９ ０ f-a:0.4℃/W f-a:0.3℃/W f-a:0.2℃/W ００ f-a:0.1℃/W １ f-a:0.05℃/W ０ ２０ ４０ ６０ ８０ １００１２０ Id（Ar.m.s.） Rth Rth Rth Rth Rth Rth f-a:0.5℃/W f-a:0.4℃/W f-a:0.3℃/W f-a:0.2℃/W f-a:0.1℃/W f-a:0.05℃/W ８０ ９０ １００ １１０ １１０ １２０ １２５ １２０ １２５ Ambient Temperature（℃） ０ ２０ ４０ ６０ ８０ １００１２０ Ambient Temperature（℃） Allowable Case Temperature（℃） Gate Voltage（V） ２