THYRISTOR MODULE PK(PD,PE)250HB UL;E76102 （M） Power Thyristor/Diode Module PK250HB series are designed for various rectifier circuits and power controls. For your circuit application. following internal connections and wide voltage ratings up to 1,600V are available. 92 12 26 7 60 48 24 5 12 5 K1G1 K2G2 4-φ6（M5） Isolated mounting base ● IT（AV）250A, IT（RMS）310A, ITSM 5500A ● di/dt 200 A/μs ● dv/dt 500V/μs 2 18 Internal Configurations R8.0 M8×14 A1K2 2 1 （K2） K1 G1 （A2） K2 3 A1K2 2 1 （K2） K1 G1 （A2） K2 G2 3 A1K2 2 1 （K2） 5 2 K2 G2 3 33 ♯110TAB （2.8.0.5T） 42max 34max （Applications） Various rectifiers AC/DC motor drives Heater controls Light dimmers Static switches 26 K1 （A2） 80±0.3 PK PD Unit：A PE ■Maximum Ratings Symbol Item PK250HB120 PE250HB120 Ratings PD250HB120 PK250HB160 PE250HB160 PD250HB160 Unit VRRM ＊Repetitive Peak Reverse Voltage 1200 1600 V VRSM ＊Non-Repetitive Peak Reverse Voltage 1300 1700 V VDRM Repetitive Peak Off-State Voltage 1200 1600 V Symbol Item IT（AV） ＊Average On-State Current Conditions Single phase, half wave, 180°conduction, Tc：72℃ IT（RMS） ＊R.M.S. On-State Current Single phase, half wave, 180°conduction, Tc：72℃ ITSM ＊Surge On-State Current 1／cycle, 2 ＊I t Value for one cycle of surge current It 2 2 50Hz/60Hz, peak Value, non-reqetitive Ratings Unit 250 A 390 A 5000/5500 125000 A A2S PGM Peak Gate Power Dissipation 10 W PG（AV） Average Gate Power Dissipation 3 W IFGM Peak Gate Current 3 A VFGM Peak Gate Voltage（Forward） 10 V VRGM Peak Gate Voltage（Reverse） 5 V di/dt VISO Tj Tstg IG＝100mA，Tj＝25℃，VD＝1／2VDRM，dIG/dt＝0.1A/μs 200 A/μs 2500 V ＊Operating Junction Temperature −40 to ＋125 ℃ ＊Storage Temperature −40 to ＋125 ℃ 2.7（28） 11（115） N･ｍ （㎏f･B） 510 g Ratings Unit Critical Rate of Rise of On-State Current ＊Isolation Breakdown Voltage （R.M.S.） A.C. 1 minute Mounting Torque Mounting（M5） Recommended Value 1.5-2.5（15-25） Terminal（M8） Recommended Value 8.8-10 （90-105） Typical Value Mass ■Electrical Characteristics Symbol Item IDRM Repetitive Peak Off-State Current, max. IRRM ＊Repetitive Peak Reverse Current, max. at VDRM, Single phase, half wave, Tj＝125℃ VTM ＊Peak On-State Voltage, max. On-State Current 750A, Tj＝125℃ Inst. measurement IGT/VGT VGD tgt dv/dt IH IL 50 mA 50 mA 1.60 V 100/3 0.25 mA/V V Gate Trigger Current/Voltage, max. Non-Trigger Gate, Voltage. min. Tj＝25℃，IT＝1A，VD＝6V Turn On Time, max. IT＝250A，IG＝100mA，Tj＝25℃，VD＝1／2VDRM，dIG/dt＝0.1A/μs Critical Rate of Rise of Off-State Voltage, min. Tj＝125℃，VD＝2／3VDRM，Exponential wave. Holding Current, typ. Tj＝25℃ Lutching Current, typ. Tj＝25℃ 100 mA Junction to case 0.14 ℃/W Rth（j-c）＊Thermal Impedance, max. ＊mark：Thyristor and Diode part. No mark：Thyristor part 33 Conditions at VDRM, Single phase, half wave, Tj＝125℃ Tj＝125℃，VD＝1／2VDRM 10 μs 500 V/μs 50 mA ;; PK(PD,PE)250HB Gate Characteristics Tj＝125℃ Av er ag e ２ Ga te １００ 25℃ ５ Po we r Po we （ r 3W ） −30℃ 125℃ ２ １０３ On-State Current（A） P （ eak 10 G W at ） e ５ ５ ２ １０２ ５ ２ Maximum Gate Non-Trigger Voltage １０１ ０． ５ −１ １０ １ １０ １０２ ５ ２ ２ １０３ ５ ２ ５ ３． ０ Power Dissipation（W） １４０ D.C. Per one element １２０ θ＝180゜ θ＝30゜ 2 ２００ 。 360 : Conduction Angle ０ ０ １００ ２００ ３００ 。 360 θ:：Conduction Conduction Angle Angle ８０ ６０ ４０ ０ ４００ Average On-State Current（A） Transient Thermal Impedance θj-c（℃/W） Per one element Ｔ ｊ＝２５℃ start ５０００ ４０００ 60Hz 50Hz ２０００ １０００ ０ ０ １０ ２ １０１ ５ ２ ５ １０２ Time（cycles） Output Current Id（Ar.m.s.） B6 ２０００ ７０ ８０ １６００ Rth Rth Rth Rth Rth Rth B2 １２００ f-a:0.5℃/W f-a:0.4℃/W f-a:0.3℃/W ９０ f-a:0.2℃/W f-a:0.1℃/W f-a:0.05℃/W １００ W1 ８００ １１０ ４００ Conduction Angle θ 180° ０ ０ ２００ ４００ ６００ Output Current（A） ０ ２０ ４０ ６０ ８０ １００１２０ １２０ １２５ Ambient Temperature（℃） Allowable Case Temperature（℃） W１；Bidirectional connection W3 １００ ２００ ３００ ４００ Average On-State Current（A） Surge On-State Current Rating （Non-Repetitive） ３０００ D.C. θ＝30゜ θ＝60゜ θ＝90゜ θ＝120゜ θ＝180゜ ０． ２ Transient Thermal Impedance Maximum ０． １ Junction to Case Per one element ０ -３ １０ ２ ５ １０-２ ２ ５ １０-１ ２ ５ １００ ２ ５ １０１ Time t（sec） B６；Six pulse bridge connection Ｗ３；Three phase bidiretional connection B２；Two Pluse bridge connection ７０ Id（Aav.） ７０ Id（Aav.） ８０ ８０ Id（Ar.m.s.） Rth Rth Rth Rth Rth Rth f-a:0.5℃/W ９ ０ f-a:0.4℃/W f-a:0.3℃/W f-a:0.2℃/W ００ f-a:0.1℃/W １ f-a:0.05℃/W ０ ２０ ４０ ６０ ８０ １００１２０ Rth Rth Rth Rth Rth Rth f-a:0.5℃/W f-a:0.4℃/W f-a:0.3℃/W f-a:0.2℃/W f-a:0.1℃/W f-a:0.05℃/W ９０ １００ １１０ １１０ １２０ １２５ １２０ １２５ Ambient Temperature（℃） ０ ２０ ４０ ６０ ８０ １００１２０ Allowable Case Temperature（℃） １００ 2 １００ θ＝90゜θ＝120゜ θ＝60゜ ３００ Surge On-State Current（A） ２． ５ Average On-State Current Vs Maximum Allowable Case Temperature（Single phase half wave） ４００ Total Power Dissipation（W） ２． ０ Average On-State Current Vs Power Dissipation （Single phase half wave） ５００ ２４００ １． ５ On-State Voltage（V） Per one element ６０００ １． ０ Gate Current（mA） Allowable Case Temperature（℃） ６００ On-State Characteristics Peak Forward Gate Voltag（10V） １０１ Gate Voltage（V） ２ Peak Gate Current（3A） ２ Ambient Temperature（℃） 34