SANREX PK90FG80

THYRISTOR MODULE
PK(PD,PE)90FG
UL;E76102
(M)
Power Thyristor/Diode Module PK90FG series are designed for various rectifier circuits
and power controls. For your circuit application, following internal connections and wide
voltage ratings up to 1600V are available. and electrically isolated mounting base make
your mechanical design easy.
92.
0
20.
0 20.
0 20.
0
17.
5
3.
5 7.
5 3.5
Internal Configurations
K G
25.
0
2300A
100A/μs
● dv/dt 1000V/μs
● di/dt
12.
0
● IT(AV) 90A, IT(RMS) 140A, ITSM
K2G2
2-φ6.
0
M5×10
A1K2
1
K1 G1
(A2)
3
2
1
(K2)
A1K2
PK
2.
8 4-#110TAB
K1
(A2)
PE
NAME PLATE
6.
5
MAX 29.
0
2
(K2)
4.
0
3
K2
G2
19.
5
K2
G2
1.
0
30±0
.
5
(Applications)
Various rectifiers
AC/DC motor drives
Heater controls
Light dimmers
Static switches
80.
0±0.
2
K2
3
2
A1K2
1
(K2)
K1 G1
(A2)
Unit:A
PD
■Maximum Ratings
(Tj=25℃ unless otherwise specified)
Ratings
Symbol
Item
PK90FG40
PD90FG40
PE90FG40
PK90FG80
PD90FG80
PE90FG80
PK90FG120
PD90FG120
PE90FG120
PK90FG160
PD90FG160
PE90FG160
Unit
VRRM
*Repetitive Peak Reverse Voltage
400
800
1200
1600
V
VRSM
*Non-Repetitive Peak Reverse Voltage
480
960
1300
1700
V
VDRM
*Repetitive Peak off-state Voltage
400
800
1200
1600
V
Symbol
Item
IT(AV) *Average On-state Current
IT(RMS) *R.M.S. On-state Current
ITSM
It
2
PGM
PG(AV)
1
/2
*I t
Value for one cycle surge current
Average Gate Power Dissipation
Peak Gate Current
VFGM
Peak Gate Voltage (Forward)
VRGM
Peak Gate Voltage (Reverse)
di/dt
VISO
Critical Rate of Rise of On-state Current
Tstg
Cycle, 50/60HZ, Peak Value, non-repetitive
Peak Gate Power Dissipation
IFGM
Tj
Single phase, half wave, 180°conduction, Tc=82℃
*Surge On-state Current
2
Ratings
Conditions
Single phase, half wave, 180°conduction, Tc=82℃
*Isolation Breakdown Voltage(R.M.S.)
A
140
A
2100/2300
22040
A
W
1
W
3
A
10
V
100
V
A/μs
2500
V
*Operating Junction Temperature
−40 to +125
℃
*Storage Temperature
Mounting
Torque
A.C. 1minute
A2S
10
5
IG=100mA,
VD=1/2VDRM,
di G /dt=0.1A/μs
Unit
90
−40 to +125
℃
Mounting(M5) Recommended Value 1.5-2.5(15-25)
2.7(28)
Terminal(M5) Recommended Value 1.5-2.5(15-25)
2.7(28)
N・m
(㎏f・B)
170
g
Mass
Typical Value
■Electrical Characteristics
Symbol
Item
IDRM
(Tj=25℃ unless otherwise specified)
Conditions
Ratings
Unit
Repetitive Peak off-state Current,max
Tj=125℃,VD=VDRM
25
mA
IRRM
*Repetitive Peak Reverse Current,max
Tj=125℃,VD=VDRM
25
mA
VTM
*On-state Voltage,max
IT=270A
1.6
V
IGT
Gate Trigger Current,max
VD=6V,IT=1A
50
mA
VGT
Gate Trigger Voltage,max
VD=6V,IT=1A
3
V
VGD
Gate Non-Trigger Voltage,min
Tj=125℃,VD=1/2VDRM
0.25
V
dv/dt
Critical Rate of Rise of off-state Voltage,min
Tj=125℃,VD=2/3VDRM
1000
V/μs
Junction to case
0.30
℃/W
Rth(j-c)*Thermal Impedance,max
*mark:Thyristor and Diode part. No mark:Thyristor part
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: [email protected]
PK(PD,PE)90FG
100
Gate Characteristics
1000
VFGM(10V)
10
PG
(
M
5
PG(
2
25℃
1
AV
)
(1
W
10
W
)
)
0.
5
0.
2
On-State Current(A)
500
20
IFGM(3A)
Gate Voltage(V)
50
20
200
100
50 100 200
500 1000 2000
10
0.
5
500010000
Gate Current(mA)
Per One Element
1500
60HZ
1000
50HZ
500
T
j=25℃ start
2
5
10
20
Time(cycles)
50
100
Transient Thermal Impedance θj-c(℃/W)
Surge On-State Current(A)
2000
1.
0
1.
5
2.
0
2.
5
On-State Voltage(V)
Surge On-State Current Rating
(Non-Repetitive)
0
1
T
j=25℃
Maximum
50
20
VGD
0.
1
10
2500
On-State Voltage max
0.35
Transient Thermal Impedance
0.3
0.25
0.2
0.15
Junction to Case
Per One Element
0.1
0.05
0
0.
0010.
002 0.
0050.
010.
02 0.
050.
1 0.
2 0.
5 1 2
Time t(sec)
5 10