SANREX TG70AA60

TRIAC(ISOLATED TYPE)
TG70AA40/60
6min
6min
● IT
(AV)
26
70A
● High surge capability 600A
● Isolated Nounting(AC650V)
● Tab Terminals
62
52±0.3
①
75±1.0
TG70AA40/60 are isolated mould triac suitable for wide range of applications like
copier, microwave oven, solid state switch, motor control, light control and heater
control.
②
2- 4.5±0.1
1.0
0.8
13.5
±0.1
13.5
±0.1
③
2-R1.5
0.8
T1
2
4.7min
4.7min
1
16or15max
G
3.2or2.3
10.4or9.5
3
Unit:A
T2
■Maximum Ratings
(Tj=25℃ unless otherwise specified)
Symbol
Item
VDRM
VDSM
Repetitive Peak Off-State Voltage
Non-Repetitive Peak Off-State Voltage
Symbol
IT(RMS)
ITSM
I2t
PGM
PG(AV)
IGM
VGM
di/dt
Tj
Tstg
VISO
Item
R.M.S. On-State Current
Surge On-State Current
I2t
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage
Critical Rate of Rise of On-State Current
Operating Junction Temperature
Storage Temperature
Isolation Breakdown Voltage(R.M.S.)
Mounting Torque(Mounting M4)
Ratings
TG70AA40
400
450
Conditions
Tc=58℃
One cycle, 50Hz/60Hz, peak, non-repetitive
IG=100mA,Tj=25℃,VD=1/2VDRM,dIG/dt=1A/μs
A.C.1 minute
Unit
TG70AA60
600
650
V
V
Ratings
70
1080/1200
6000
10
1
3
10
50
−40 to +125
−40 to +125
2500
Recommended Value 1.0-1.4(10-14)
Unit
A
A
A2S
W
W
A
V
A /μs
℃
℃
V
N・m
(kgf・B)
g
1.5(15)
Mass
■Electrical Characteristics
Item
IDRM
VTM
+
I GT1
Reptitive Peak Off-State Current
Peak On-State Voltage
1
VD=VDRM, Single phase, half wave, Tj=125℃
On-State Current,100A,IT=25A, Inst. measurement
Tj=25℃,IT=1A,VD=6V
−
I GT1
2
Tj=25℃,IT=1A,VD=6V
50
+
I GT3
3
−
I GT3
4
Tj=25℃,IT=1A,VD=6V
50
+
V GT1
1
Tj=25℃,IT=1A,VD=6V
3
−
GT1
2
Tj=25℃,IT=1A,VD=6V
3
+
V GT3
3
−
V GT3
4
Non-Trigger Gate Voltage
V
VGD
dv/dt
〔dv/dt〕c
Gate Trigger Current
Gate Trigger Voltage
Critical Rate of Rise on-State
Voltage,min.
Critical Rate of Rise off-State
Voltage at commutation
IH
Holding Current
Rth(j-c) Thermal Impedance
Conditions
Ratings
Typ. Max.
10
1.35
50
Symbol
Min.
Unit
mA
V
mA
V
Tj=25℃,IT=1A,VD=6V
Tj=125℃,VD=1/2VDRM
0.2
V
Tj=125℃,VD=2/3VDRM,Exoponential wave.
50
V/μs
Tj=125℃,VD=2/3VDRM,
〔di/dt〕c=8A/ms
6
V/μs
Tj=25℃
Junction to case
3
50
100
0.83
mA
℃/W
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: [email protected]
;
2
Gate Characteristics
1000
TG70AA40/60
On-State Voltage
Peak Gate Voltage(10V)
Av
er
ag
e
2
Ga
te
Po
we
(
r
100
P
Po eak
we G
(
r ete
10
W
)
1W
)
5
125℃ 25℃
2
−30℃
On-State Current(A)
5
Tj=25℃
100
Peak Gate Current(3A)
Gate Voltage(V)
101
10
Maximum Gate Voltage that will not trigger any unit
101
2
5
102
2
5
103
10
0
2
1.
0
Gate Current(mA)
130
θ=180゜
θ=150゜
80
Power Dissipation(W)
Allowable Case Temperature(℃)
90
On State Current vs.
Maximum Power Dissipation
70
100
360
50
θ=60゜
: Conduction Angle
40
θ=30゜
30
20
10
0
10
20
30
40
50
60
70
On State Current vs.
Allowable Case Temperature
110
θ=90゜
。
80
θ=30゜
90
θ=60゜
80
θ=90゜
2
70
60
θ=120゜
θ=180゜
θ=150゜
。
360
: Conduction Angle
50
40
0
10
20
RMS On-State Current(A)
30
40
50
60
70
80
RMS On-State Current(A)
Surge On-State Current Rating
(Non-Repetitive)
Surge On-State Current(A)
1400
3.
0
120
θ=120゜
2
60
2.
0
On-State Voltage(V)
1200
Tj=25℃ start
1000
800
600
60Hz
50Hz
400
200
00
10
2
101
5
2
5
102
Transient Thermal Impedance θj-c(℃/W)
Time(cycles)
1.
0
Transient Thermal Impedance
Junction to Case
0.
8
0.
6
0.
4
0.
2
0 ー3
10
2
5
10ー2
2
5
10ー1
2
Time t(sec)
5
100 2
5
101 SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: [email protected]