THYRISTOR MODULE（ISOLATED MOLD TYPE） SG16AA UL:E76102 （M） SG16AA is an isolated molded thyristor which is suitable fora wide range of industrial and home electronics uses. SG16AA uses highly relible glass passivation. 39.2 MAX 2-φ4.2±0.1 ● IT(AV)=16A （K） （G） A：TAB250 K：TAB250 20.1 MAX 21.6 MAX 30.0±0.1 13.9 G：TAB187 ＃250 ＃180 φ1.3（G） 7.95±0.15 6.35±0.15 φ1.65（T1.T1） A G 8.2 MAX 22.5 MAX Surge Capability ● Tab terminals for easy wiring. 10.8 （A） 23.0 MAX ● high 2.6 K Unit：A ■Maximum Ratings Symbol Ratings Item SG16AA20 SG16AA40 SG16AA60 Unit VRRM Repetitive Peak Reverse Voltage 200 400 600 V VRSM Non-Repetitive Peak Reverse Voltage 240 480 720 V VDRM Repetitive Peak Off-State Voltage 200 400 600 V Symbol Item IT（AV） IT（RMS） ITSM I2t Conditions Ratings Unit Average On-State Current Single phase, half wave, 180°conduction, Tc：80℃ 16 A R.M.S. On-State Current Single phase, half wave, 180°conduction, Tc：80℃ 25 A Surge On-State Current 1 ／2cycle, I2t 2∼10ms 50Hz/60Hz, peak value, non-repetitive 220/250 260 A A2S PGM Peak Gate Power Dissipation 10 W PG（AV） Average Gate Power Dissipation 1 W IFGM Peak Gate Current VFGM Peak Gate Voltage(Forward) VRGM Peak Gate Voltage(Reverse) di／dt Critical Rate of Rise of On-State Current IG＝100mA，Tj＝25℃，VD＝1／2VDRM，dIG/dt＝1A/μs VISO Isolation Breakdown Voltage (R.M.S.) A.C.1minute Tj Tstg 3 A 10 V 5 V 100 A /μs 2500 V Operating Junction Temperature −40 to ＋125 ℃ Storage Temperature −40 to ＋125 ℃ 1.5（15） N･ｍ （㎏f･B） 23 g Mounting Torque（M4） Recommended Value 1.0-1.4（10-14） Mass ■Electrical Characteristics Symbol Item Conditions IDRM Repetitive Peak Off-State Current, max. at IRRM Ratings Unit single phase, half wave, Tj＝125℃ 3 mA Repetitive Peak Reverse Current, max. at VDRM, single phase, half wave, Tj＝125℃ 3 mA VDRM, VTM Peak On-State Voltage, max. On-State Current 50A, Tj＝25℃ Inst. measurement 1.50 V IGT／VGT Gate Trigger Current/Voltage, max. Tj＝25℃，IT＝1A，VD＝6V VGD Non-Trigger Gate, Voltage. min. Tj＝125℃，VD＝1／2VDRM 40/3 0.2 mA/V V tgt Turn On Time, max. IT＝16A，IG＝100mA，Tj＝25℃，VD＝1／2VDRM，dIG/dt＝1A/μs 10 μs 100 V/μs 30 mA 2.0 ℃/W dv／dt IH Critical Rate of Rise of Off-State Voltage, min. Tj＝125℃, Holding Current, typ. Tj＝25℃ Rth（j-c） Thermal Impedance, max. SanRex VD＝2／3VDRM, Junction to case Exponential wave. ® 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: [email protected] ;; ;; ２ 25℃ １００ Av er ag e −40℃ Ga te 125℃ Po we （ r 1W ５ １０２ ５ ２ ２ １０３ ５ ２ ２ ５ ０ ５ １ ２ ３ 4 ５ ６ On-State Voltage（V） Average On-State Current Vs Power Dissipation （Single phase half wave） Average On-State Current Vs Maximum Allowable Case Temperature（Single phase half wave） １４０ 2 １２０ D.C. 。 360 １００ ０ ０ ５ １０ １５ ２０ ２５ ３０ ３５ ４０ ４０ ２０ ０ ５ １０ D.C. 。 360 : Conduction Angle ６０ θ＝180゜ 2 θ＝120゜ θ＝30゜ １０ θ＝60゜ １５ : Conduction Angle ８０ θ＝90゜ θ＝180゜ θ＝120゜ θ＝90゜ θ＝60゜ ２０ θ＝30゜ ２５ ５ １５ ２０ ２５ ３０ Average On-State Current（A） Average On-State Current（A） Ambient Temperature Average On-State （Single phase full wave） Surge On-State Current Rating （Non-Repetitive） １５ ３００ Surge On-State Current（A） Rth：2.０℃/W Rth：1.5℃/W Rth：1.0℃/W Per one element ２５０ Rth：３.０℃/W Tj＝25℃ ２００ １２ １５０ ９ 60Hz １００ ６ ３ ０ ０ ２０ ４０ ６０ ８０ １００ １２０ １４０ １６０ Transient Thermal Impedance １０−３ ２ ５ １０−２ ２ ５ １０−１ ２ ５ １００ ２． ０ ２.０ １． ５ 1.5 １． ０ １０． ０ ０． ５ ８． ０ ８０□×３１ FIN：AIPLATE PAINTED BLACK 120 ×３ １ ４． ０ Junction to case ２． ０ ０ ０ １０ ２ ６． ０ 100□×３１ □ ４． ０ ５ １０1 ２ ５ １０２ ２ Time t（sec） ５0Hz ５０ ０ ０ １０ ２ ５ １０1 ２ Time（cycles） Ambient Temperature（℃） Transient Thermal Impedance θj-c（℃/W） ５ Gate Current（mA） ３０ ０ ６． ０ １０２ １０１ ３５ １８ ２ Maximum Gate Voltage that will not trigger any unit １０−１ １ １０ ４０ ） ５ On-State Current（A） ５ ２ Average On-State Current（A） P Po eak we Ga （ t r 10 e W ） Allowable Case Temperature（℃） Gate Voltage（V） １０３ Peak Forward Gate Voltag（10V） 10１ Power Dissipation（W） On-State Voltage max Gate Characteristics Peak Gate Current（3A） ２ SG16AA ５ １０３ ２ ２． ０ ５ １０4 ５ １０２