THYRISTOR( Through Hole/Non-isolated) SMG3D60C ( Sensitive Gate) ● ● Home Appliances : Electric Blankets, Starter for FL, other control applications Industrial Use : SMPS, Solenoid for Breakers, Motor Controls, Heater Controls, other control applications 0.70 ±0.20 2.30 ±0.10 0.50 ±0.10 TC POINT 2 2 6.10 ±0.20 Typical Applications TO-251 6.60 ±0.20 5.34 ±0.30 1.80 ±0.20 Thyristor SMG3D60C is designed for full wave AC control applications. It can be used as an ON/OFF function or for phase control operation. 1 3 1.07 0.96 ±0.20 9.30 ±0.30 Features IT(AV)=3A ● High Surge Current ● Low Voltage Drop ● Lead-Free Package ● 0.50 ±0.10 0.76 ±0.20 2 1 1K 2A 3 Gate 3 2 2.30 ±0.20 2.30 ±0.20 Identifying Code：S3D6C ■Maximum Ratings Symbol Unit：mm （Tj=25℃ unless otherwise specified） Item Reference Ratings Unit VRRM Repetitive Peak Reverse Voltage 600 V VRSM Non-Repetitive Peak Reverse Voltage 720 V VDRM Repetitive Peak Off-State Voltage 600 V IT（AV） Average On-State Current Single phase, half wave, 180° , conduction, Tc＝108℃ 3 A R.M.S. On-State Current Single phase, half wave, 180° , conduction, Tc＝108℃ 4.7 A 50/55 12.5 A2S Peak Gate Power Dissipation 0.5 W Average Gate Power Dissipation 0.1 W IFGM Peak Gate Current 0.3 A VFGM Peak Gate Voltage（Forward） 6 V VRGM Peak Gate Voltage（Reverse） 6 V Operating Junction Temperature −40∼＋125 ℃ Storage Temperature −40∼＋150 ℃ 0.39 g IT（RMS） ITSM I2t PGM PG（AV） Tj Tstg Surge On-State Current 50Hz/60Hz, 1 ／2 cycle Peak value, non-repetitive I2t Mass A ■Electrical Characteristics Symbol Item IDRM Repetitive Peak Off-State Current Tj＝125℃, VD＝VDRM, RGK＝220Ω IRRM Repetitive Peak Reverse Current Tj＝125℃, VR＝VRRM, RGK＝220Ω VTM Peak On-State Voltage IT＝9A, Inst. measurement IGT Gate Trigger Current VGT Gate Trigger Voltage VGD Non-Trigger Gate Voltage Tj＝125℃, VD＝1／2VDRM, RGK＝220Ω Holding Current RGK＝220Ω Thermal Resistance Junction to case IH Rth（j-c） Reference VD＝6V, RL＝10Ω Ratings Min. Typ. 1 Max. Unit 1 mA 1 mA 1.5 V 200 μA 0.8 V 0.1 V 3.5 mA 3.8 ℃/W SanRex 50 Seaview Blvd. Port Washington, NY 11050 PH(516)625-1313 FX(516)625-8845 E-mail:[email protected] SMG3D60C Gate Characteristics １０ 100 On-State Voltage（MAX） VFGM（６V） Ｔ ｊ=２５℃ Ｔ ｊ=１２５℃ PG（AV） （０.1W） On-State Current（A） １ IFGM（0.3A） Gate Voltage（V） PGM（0.5W） ２５℃ ０.１ VGD（０.1V） ０.０１ ０.０１ ０.１ １ １０ １００ １０ １ ０.１ 0.5 １０００ 1 Power Dissipation（W） 4.5 θ＝150゜ 4 θ＝180゜ θ＝120゜ 3.5 θ＝90゜ θ＝60゜ 3 2.5 θ＝30゜ 2 1.5 π ０ 1 2π θ ３６０゜ 0.5 θ ：Conduction Angle ０ ０ ０.5 1 1.5 2 2.5 3 Allowable Case Temperature（℃） Average On-State Current vs Power Dissipation（Single phase half wave） 5 3.5 60HZ 30 50HZ 20 10 ０ １ １０ １０0 Transient Thermal Impedance（℃/W） Surge On-State Current（A） 40 130 Gate Trigger Voltage（V） IGT（t℃） ×100（％） IGT（２５℃） １００ １０ −２５ ０ ２５ ５０ ７５ Junction Temp.（℃） 3.5 4 π ０ 2π θ ３６０゜ θ ：Conduction Angle 120 115 110 105 θ＝30゜ 100 ０ 0.5 1 θ＝180゜ θ＝60゜ θ＝90゜ θ＝120゜ θ＝150゜ 1.5 2 2.5 3 3.5 １０ Maximum Transient Thermal Impedance Characteristics １ ０.０１ ０.１ １ １０ １００ Time（Sec.） IGT −Tj Change Rate（Typical） １ −５０ 3 125 Time（Cycles） １０００ 2.5 Average On-State Current（A） Surge On-State Current Rating （Non-Repetitive） 50 2 Average On-State Current vs Allowable Case Temperature（Single phase half wave） Average On-State Current（A） 60 1.5 On-State Voltage（V） Gate Current（mA） １００ １２５ 1 VGT −Tj（Typical） 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 −５０ −２５ ０ ２５ ５０ ７５ １００ １２５ Junction Temp.（℃） SanRex 50 Seaview Blvd. Port Washington, NY 11050 PH(516)625-1313 FX(516)625-8845 E-mail:[email protected] SMG3D60C VD −Tj Change Rate（Typical） 150 140 140 130 130 V（ R t℃） ×100（％） V（ R 25℃） VD（t℃） ×100（％） VD（２５℃） 150 120 110 100 90 80 70 60 50 −５０ VR −Tj Change Rate（Typical） 120 110 100 90 80 70 60 −２５ ０ ２５ ５０ ７５ Junction Temp.（℃） １００ １２５ 50 −５０ −２５ ０ ２５ ５０ ７５ １００ １２５ Junction Temp.（℃） SanRex 50 Seaview Blvd. Port Washington, NY 11050 PH(516)625-1313 FX(516)625-8845 E-mail:[email protected]