TCDT1100(G) Series Vishay Telefunken Optocoupler with Phototransistor Output Description The TCDT1100(G) series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements. Applications Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): 14827 D For appl. class I – IV at mains voltage ≤ 300 V D For appl. class I – III at mains voltage ≤ 600 V according to VDE 0884, table 2, suitable for: Switch-mode power supplies, line receiver, computer peripheral interface, microprocessor system interface. nc C E 6 5 4 1 2 3 A (+) C (–) VDE Standards D VDE 0884 Optocoupler for electrical safety requirements D IEC 950/EN 60950 94 9222 These couplers perform safety functions according to the following equipment standards: nc Office machines (applied for reinforced isolation for mains voltage ≤ 400 VRMS) D VDE 0804 Telecommunication apparatus and data processing D IEC 65 Safety for mains-operated electronic and related household apparatus Order Instruction Ordering Code CTR Ranking 1) TCDT1100/ TCDT1100G > 40% TCDT1101/ TCDT1101G1) 40 to 80% TCDT1102/ TCDT1102G1) 63 to 125% TCDT1103/ TCDT1103G1) 100 to 200% 1) G = Leadform 10.16 mm; G is not market on the body 208 Remarks Rev. A3, 11–Jan–99 TCDT1100(G) Series Vishay Telefunken Features D Creepage current resistance according to Approvals: D BSI: BS EN 41003, BS EN 60095 (BS 415), BS EN 60950 (BS 7002), Certificate number 7081 and 7402 VDE 0303/IEC 112 Comparative Tracking Index: CTI = 275 D Thickness through insulation ≥ 0.75 mm D FIMKO (SETI): EN 60950, Certificate number 12399 D Underwriters Laboratory (UL) 1577 recognized, file number E-76222 General features: D Isolation materials according to UL94-VO D Pollution degree 2 D VDE 0884, Certificate number 94778 (DIN/VDE 0110/ resp. IEC 664) VDE 0884 related features: D Rated impulse voltage (transient overvoltage) VIOTM = 6 kV peak D Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV D Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak) D Rated recurring peak voltage (repetitive) VIORM = 600 VRMS D Climatic classification 55/100/21 (IEC 68 part 1) D Special construction: Therefore, extra low coupling capacity of typical 0.2 pF, high Common Mode Rejection D Low temperature coefficient of CTR D CTR offered in 4 groups D Base not connected D Coupling System A Absolute Maximum Ratings Input (Emitter) Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperature Test Conditions tp ≤ 10 ms Tamb ≤ 25°C Symbol VR IF IFSM PV Tj Value 5 60 3 100 125 Unit V mA A mW °C Symbol VCEO VECO IC ICM PV Tj Value 32 7 50 100 150 125 Unit V V mA mA mW °C Symbol VIO Ptot Tamb Tstg Tsd Value 3.75 250 –55 to +100 –55 to +125 260 Unit kV mW °C °C °C Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature Test Conditions tp/T = 0.5, tp ≤ 10 ms Tamb ≤ 25°C Coupler Parameter AC Isolation test voltage (RMS) Total power dissipation Ambient temperature range Storage temperature range Soldering temperature Rev. A3, 11–Jan–99 Test Conditions t = 1 min Tamb ≤ 25°C 2 mm from case t ≤ 10 s 209 TCDT1100(G) Series Vishay Telefunken Electrical Characteristics (Tamb = 25°C) Input (Emitter) Parameter Forward voltage Junction capacitance Test Conditions IF = 50 mA VR = 0, f = 1 MHz Symbol VF Cj Min. Typ. 1.25 50 Max. 1.6 Unit V pF Test Conditions IC = 1 mA IE = 100 mA VCE = 20 V, If = 0, E = 0 Symbol VCEO VECO ICEO Min. 32 7 Typ. Max. Unit V V nA Test Conditions IF = 10 mA, IC = 1 mA Symbol VCEsat Min. Max. 0.3 Unit V VCE = 5 V, IF = 10 mA, RL = 100 W f = 1 MHz fc 110 kHz Ck 0.3 pF Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector emitter cut-off current 200 Coupler Parameter Collector emitter saturation voltage Cut-off frequency Coupling capacitance Typ. Current Transfer Ratio (CTR) Parameter IC/IF 210 Test Conditions VCE = 5 V, IF = 10 mA Type TCDT1100(G) TCDT1101(G) TCDT1102(G) TCDT1103(G) Symbol CTR CTR CTR CTR Min. 0.40 0.40 0.63 1.00 Typ. Max. Unit 0.80 1.25 2.00 Rev. A3, 11–Jan–99 TCDT1100(G) Series Vishay Telefunken Maximum Safety Ratings (according to VDE 0884) see figure 1 This device is used for protective separation against electrical shock only within the maximum safety ratings. This must be ensured by using protective circuits in the applications. Input (Emitter) Parameters Forward current Test Conditions Symbol Isi Value 130 Unit mA Test Conditions Tamb ≤ 25°C Symbol Psi Value 265 Unit mW Test Conditions Symbol VIOTM Tsi Value 6 150 Unit kV °C Output (Detector) Parameters Power dissipation Coupler Parameters Rated impulse voltage Safety temperature Insulation Rated Parameters (according to VDE 0884) Parameter Test Conditions Partial discharge test voltage – 100%, ttest = 1 s Routine test Partial discharge g test voltage g – tTr = 60 s, ttest = 10 s, Lot test (sample test) (see figure 2) Insulation resistance VIO = 500 V VIO = 500 V, Tamb = 100°C VIO = 500 V, Tamb = 150°C Symbol Vpd Min. 1.6 VIOTM Vpd RIO RIO 6 1.3 1012 1011 RIO 109 Typ. Max. Unit kV kV kV W W W VIOTM 300 V t1, t2 = 1 to 10 s t3, t4 = 1 s ttest = 10 s tstres = 12 s Phototransistor Psi ( mW ) 250 200 VPd 150 VIOWM VIORM 100 IR-Diode Isi ( mA ) 50 P tot – Total Power Dissipation ( mW ) (construction test only) 0 t3 ttest t4 0 0 94 9182 25 50 75 100 125 Tsi – Safety Temperature ( °C ) Figure 1. Derating diagram Rev. A3, 11–Jan–99 150 t1 13930 tTr = 60 s t2 tstres t Figure 2. Test pulse diagram for sample test according to DIN VDE 0884 211 TCDT1100(G) Series Vishay Telefunken Switching Characteristics Parameter Delay time Rise time Fall time Storage time Turn-on time Turn-off time Turn-on time Turn-off time Symbol td tr tf ts ton toff ton toff VS = 5 V, IF = 10 mA, RL = 1 kW ((see figure g 4)) Typ. 4.0 7.0 6.7 0.3 11.0 7.0 25.0 42.5 IC = 5 mA; Adjusted trough input amplitude RG = 50 W tp 0.01 T + 96 11698 IF 0 tp = 50 ms t tp Channel I 50 W Unit ms ms ms ms ms ms ms ms +5V IF IF 0 Test Conditions VS = 5 V, IC = 5 mA, RL = 100 W ((see figure g 3)) 100 W Channel II Oscilloscope RL ≥ 1 MW CL ≤ 20 pF IC 100% 90% 95 10900 Figure 3. Test circuit, non-saturated operation 10% 0 t tr IF 0 IF = 10 mA td +5V ton IC RG = 50 W tp 0.01 T tp tion td tr ton (= td + tr) + tp = 50 ms Channel I 50 W Channel II 1 kW ts tf toff pulse duradelay time rise time turn-on time ts tf toff (= ts + tf) storage time fall time turn-off time Oscilloscope RL ≥ 1 MW CL ≤ 20 pF 95 10843 Figure 5. Switching times Figure 4. Test circuit, saturated operation 212 Rev. A3, 11–Jan–99 TCDT1100(G) Series Vishay Telefunken Typical Characteristics (Tamb = 25_C, unless otherwise specified) 10000 Coupled device ICEO– Collector Dark Current, with open Base ( nA ) P tot – Total Power Dissipation ( mW ) 300 250 200 Phototransistor 150 IR-diode 100 50 VCE=20V IF=0 1000 100 10 0 1 0 40 80 120 Tamb – Ambient Temperature ( °C ) 96 11700 0 50 Figure 9. Collector Dark Current vs. Ambient Temperature 1000.0 100 20mA IC – Collector Current ( mA ) I F – Forward Current ( mA ) IF=50mA 100.0 10.0 1.0 0.1 CTR rel – Relative Current Transfer Ratio VCE=5V IF=10mA 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 –30 –20 –10 0 10 20 30 40 50 60 70 80 96 11920 2mA 1mA Tamb – Ambient Temperature ( °C ) Figure 8. Relative Current Transfer Ratio vs. Ambient Temperature Rev. A3, 11–Jan–99 0.1 1 10 100 VCE – Collector Emitter Voltage ( V ) 95 11054 Figure 10. Collector Current vs. Collector Emitter Voltage VCEsat – Collector Emitter Saturation Voltage ( V ) VF – Forward Voltage ( V ) 1.5 1.3 5mA 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Figure 7. Forward Current vs. Forward Voltage 1.4 10mA 10 0.1 0 96 11862 100 75 Tamb – Ambient Temperature ( °C ) 95 11026 Figure 6. Total Power Dissipation vs. Ambient Temperature 25 1.0 0.8 0.6 0.4 CTR=50% 0.2 95 11055 20% 10% 0 1 10 100 IC – Collector Current ( mA ) Figure 11. Collector Emitter Saturation Voltage vs. Collector Current 213 TCDT1100(G) Series Vishay Telefunken t on / t off – Turn on / Turn off Time ( m s ) CTR – Current Transfer Ratio ( % ) 1000 VCE=5V 100 10 1 1 100 10 IF – Forward Current ( mA ) 95 11057 t on / t off – Turn on / Turn off Time ( m s ) 15 toff 10 5 0 95 11016 Figure 12. Current Transfer Ratio vs. Forward Current 2 4 6 8 10 IC – Collector Current ( mA ) Figure 14. Turn on / off Time vs. Collector Current Type 50 toff 40 30 Date Code (YM) ton 20 Saturated Operation VS=5V RL=1kW 10 XXXXXX 918 A TK 63 0884 V D E Production Location Safety Logo 15090 0 0 5 10 15 20 IF – Forward Current ( mA ) Figure 13. Turn on / off Time vs. Forward Current 214 Non Saturated Operation VS=5V RL=100W ton 0 0.1 95 11017 20 Coupling System Indicator Company Logo Figure 15. Marking example Rev. A3, 11–Jan–99 TCDT1100(G) Series Vishay Telefunken Dimensions of TCDT110.G in mm weight: ca. 0.50 g creepage distance: air path: 8 mm y y 8 mm after mounting on PC board 14771 Dimensions of TCDT110. in mm weight: 0.50 g creepage distance: air path: 6 mm y y 6 mm after mounting on PC board 14770 Rev. A3, 11–Jan–99 215