2SJ406 P- Channel Silicon MOS FET Very High-Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very high-speed switching. • Low-voltage dreve. • Micaless package facilitating easy mounting. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current (D.C) Drain Current (Pulse) Allowable power Dissipation Channel Temperature Storage Temperature unit VDSS VGSS ID PW≤10µS, dutycycle≤1% IDP Tc=25°C PD Tch Tstg --200 ±20 --12 --48 V V A A 40 W °C °C 150 --55 to +150 typ min Electrical Characteristics / Ta=25°C Drain to Source Breakdown Voltage Gate to Source Breakdown Voltage V(BR)DSS V(BR)GSS ID=--1mA , VGS=0 ID=±100µA , VGS=0 Zero Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain to Source on State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-oFF Delay Time Fall Time IDSS VDS=--200V , VGS=0 IGSS VGS(OFF) | yfs | RDS(On)1 Ciss Coss Crss VGS=±16V VDS=--10V VDS=--10V ID=--5A VDS=--20V VDS=--20V VDS=--20V Diode Forward Voltage td(On) tr td(Off) tf VSD , , , , , , , VDS=0 ID=--1mA ID=--6A VGS=--4V f=1MHz f=1MHz f=1MHz V V --1.5 6.3 10.5 170 2400 540 260 40 120 720 310 --1.0 , VGS = 0 Elecrical Connection Switching Time Test Circuit Case Outline D TO-220 (unit:mm) 4.5 P.G 50Ω 2SJ406 2.8 G 2.4 1.6 5.6 1.2 14.0 VOUT V 16.0 ID=--6A RL=--16.7Ω PW=10uS D.C≤1% mΩ pF pF pF --1.5 VIN VIN 230 µA V S 18.1 0V --10V µA 3.5 7.2 φ3.2 --100 ±10 --2.5 ns ns ns ns 10.0 VDD=--100V unit --200 ±20 See Specified Test Circuit . IS =--1.0A max 0.7 0.75 S 1 2 3 2.55 2.4 2.55 2.55 2.55 1 : Gate 2 : Drain 3 : Source Specifications and information herein are subject to change without notice. SANYO Electric Co., Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10,1 Chome, Ueno, taito-ku, 110 JAPAN 990929TM2fXHD