KEXIN KTD2005

IC
IC
SMD Type
Ultrahigh-Speed Switching Applications
KTD2005
TSSOP-8
Unit: mm
Features
Low ON resistance.
2.5V drive.
Mounting height 1.1mm.
Composite type, facilitating high-density mounting.
1 : Drain1
2 : Source1
3 : Source1
4 : Gate1
5 : Gate2
6 : Source2
7 : Source2
8 : Drain2
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Drain-to-Source Voltage
Parameter
VDSS
20
V
Gate-to-Source Voltage
VGSS
10
V
Drain Current(DC)
ID
1
A
Drain Current(pulse) *1
IDP
4
A
Allowable Power Dissipation *2
PD
0.8
W
Total Dissipation *2
PT
1.0
W
Channel Temperature
Tch
150
Storage Temperature
Tstg
-55 to +150
*1 PW
10 s, duty cycle 1%
*2 Mounted on a ceramic board (1000mm2X0.8mm)
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1
IC
IC
SMD Type
KTD2005
Electrical Characteristics Ta = 25
Parameter
Drain-to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Testconditons
IDSS
VDS = 20 V, VGS = 0 V
IGSS
VGS =
Typ
VDS = 10 V, ID = 1 A
Max
20
10
1.8
1.3
2.6
A
V
S
RDS(on)1 VGS = 10 V, ID = 1A
200
260
260
360
VDS =10 V,f = 1 MHz
A
10
0.4
RDS(on)2 VGS = 4 V, ID = 1A
Ciss
Unit
V
8 V, VDS = 0 V
VGS(off) VDS = 10 V, ID = 1 mA
Yfs
Min
m
90
pF
Output Capacitance
Coss
60
pF
Reverse Transfer Capacitance
Crss
28
pF
Turn-on Delay Time
td(on)
10
ns
Rise Time
Turn-off Delay Time
Fall Time
tr
22
ns
td(off)
20
ns
tf
19
ns
6
nC
1
nC
2
nC
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain "Miller" Charge
Qgd
Diode Forward Voltage
VSD
Switching Time Test Circuit
2
Symbol
V(BR)DSS ID=1mA, VGS=0
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See Specified Test Circuit
VDS=10V,VGS=10V,ID=1A
IS= 1A, VGS = 0 V
1.0
1.2
V