2SK2618LS N- Channel MOS Silicon FET Very High-Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Low Qg Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable power Dissipation Channel Temperature Storage Temperature Electrical Characteristics / Ta=25°C Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain to Source on State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Turn-ON Delay Time Rise Time Turn-oFF Delay Time Fall Time Diode Forward Voltage unit V V A A W °C °C 500 ±30 5 20 30 150 --55 to +150 VDSS VGSS ID IDP (Tc=25°C) PD Tch Tstg min V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on) ID=1mA VDS=500V VGS=±30V VDS=10V VDS=10V ID=3A , VGS=0 , VGS=0 , VDS=0 , ID=1mA , ID=3A , VGS=15V Ciss Coss Crss Qg VDS=20V VDS=20V VDS=20V VDS=200V GS=10V , , , , td(on) tr td(off) tf VSD typ 1.0 ±100 5.5 3.5 1.5 3.0 0.95 f=1MHz f=1MHz f=1MHz ID=5A V mA nA V S Ω pF pF pF nC 20 20 50 25 ns ns ns ns V , VGS = 0 1.2 Case Outline Switching Time Test Circuit TO-220FI(LS) (unit:mm) VDD=200V 3.5 16.0 0.6 0.9 1.2 G 0.7 14.0 3.6 VOUT 16.1 D 2.8 7.2 ID=3A RL=66.7 VGS=15V 4.5 10.0 φ 3.2 PW=1µS D.C.≤0.5% 2SK2618LS P.G 1.25 unit 700 250 120 20 See Specified Test Circuit IS =5A max 500 RGS 50Ω 0.75 1 2 3 2.4 S Specifications and information herein are subject to change without notice. 2.55 2.55 SANYO Electric Co., Ltd. Semiconductor Business Headquarters TOKYO OFFICE Ttokyo Bldg., 1-10,1 Chome, Ueno, taito-ku, 110 JAPAN 960329TM2fXHD