IC IC SMD Type Load Switching Applications KTS1012 TSSOP-8 Unit: mm Features Low ON resistance. 4.0V drive. Mount height 1.1mm. 1,5,8: Drain 2,3,6,7: Source 4: Gate Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Drain-to-Source Voltage VDSS -30 V Gate-to-Source Voltage VGSS 20 V Drain Current(DC) ID -6 Unit A Drain Current(pulse) *1 IDP -32 A Allowable Power Dissipation *2 PD 1.3 W Channel Temperature Tch 150 Storage Temperature Tstg -55 to +150 *1 PW 10 s, duty cycle 1% *2 Mounted on a ceramic board (1000mm2X0.8mm) www.kexin.com.cn 1 IC IC SMD Type KTS1012 Electrical Characteristics Ta = 25 Parameter Symbol Drain-to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-to-Source Leakage Current IDSS VDS = -30 V, VGS = 0 V IGSS VGS = Min Typ Forward Transfer Admittance Drain to Source On-state Resistance Yfs -1 10 -2.4 8.7 12 A V S 21 28 m RDS(on)2 VGS = -4.5 V, ID = -4 A 33 47 m RDS(on)3 VGS = -4 V, ID = -4 A 37 52 m Input Capacitance Ciss Coss Reverse Transfer Capacitance Crss Turn-on Delay Time td(on) tr Turn-off Delay Time A RDS(on)1 VGS = -10 V, ID = -6 A Output Capacitance Rise Time Unit V 16 V, VDS = 0 V VDS = -10 V, ID = -6 A Max -30 VGS(off) VDS = -10 V, ID = -1 mA Cutoff Voltage VDS = -10 V,f = 1 MHz See Specified Test Circuit td(off) 1700 pF 380 pF 240 pF 15 ns 130 ns 110 ns 85 ns Total Gate Charge Qg VDS= -10 V 32 nC Gate-to-Source "Miller" Charge Qgs VGS = -10 V 4.5 nC Gate-Drain Charge Qgd ID = -6 A Diode Forward Voltage VSD Is = -6 A, VGS = 0 V Fall Time tf Switching Time Test Circuit Marking Marking 2 Testconditons V(BR)DSS ID=-1mA, VGS=0 S1012 www.kexin.com.cn 5 -0.79 nC -1.5 V