Ordering number:EN4552 FP106 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions · Complex type with a PNP transistor and a Shottky barrier diode in one package, facilitating highdensity mounting. · The FP106 is composed of 2 chips, one being equivalent to the 2SA1898 and the other the SB1005C. unit:mm 2088A [FP106] 1:Base 2:Common 3:Emitter 4:Common 5:Anode 6:Common 7:Common (Common:Collcector, Cathode) SANYO:PCP4 (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Unit [TR] Collector-to-Base Voltage VCBO VCEO –15 V Collector-to-Emitter Voltage –15 V Emitter-to-Base Voltage VEBO –5 V IC –3 A I CP –5 Collector Current Collector Current (Pulse) Base Current IB Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg –600 Mounted on ceramic board (250mm2×0.8mm) A mA 1.3 W 150 ˚C –55 to +150 ˚C VRRM VRSM 15 V 17 V IO 1 A [SBD] Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Surge Voltage Average Rectified Current Surge Forward Current IFSM Junction Temperature Storage Temperature 8 A Tj –55 to +125 ˚C Tstg –55 to +125 ˚C Marking:106 Electrical Connection 50Hz sine wave, 1cycle Continued on next page. 1:Base 2:Common 3:Emitter 4:Common 5:Anode 6:Common 7:Common (Common:Collcector, Cathode) SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/30395MT (KOTO) BX-0044 No.4552-1/4 FP106 Continued from preceding page. Electrical Characteristics at Ta=25˚C .Parameter Symbol Conditons Ratings min typ max Unit [TR] Collector Cutoff Current ICBO Emitter Cutoff Current IEBO hFE1 DC Current Gain hFE2 Gain-Bandwidth Product Output Capacitance C-E Saturation Voltage B-E Saturation Voltage VCB=–12V, IE=0 VEB=–3V, IC=0 VCE=–2V, IC=–0.5A VCE=–2V, IC=–3A 100 –1 µA –1 µA 280 50 fT VCE=–2V, IC=–0.3A 300 Cob VCE=–10V, f=1MHz 28 MHz VCE(sat) VBE(sat) IC=–1.5A, IB=–75mA –0.25 –0.5 IC=–1.5A, IB=–75mA –0.95 –1.2 pF V V C-B Breakdown Voltage V(BR)CBO IC=–10µA, IE=0 –15 V C-E Breakdown Voltage V(BR)CEO IC=–1mA, RBE=∞ V(BR)EBO IE=–10µA, IC=0 –15 V E-B Breakdown Voltage Turn-ON Time Storage Time Fall Time –5 V ton tstg See specified Test Circuit 30 ns See specified Test Circuit 100 ns tf See specified Test Circuit 120 ns [SBD] Reverse Voltage VR Forward Voltage VF IR Reverse Current Interterminal Capacitance Reverse Recovery Time Thermal Resistance C trr Rthj-a IR=300µA IF=1A 15 V VR=7.5V VR=10V, f=1MHz V 50 µA 30 IF=IR=100mA, See specified Test Circuit Mounted on ceramic board (250mm2×0.8mm) 0.55 pF 10 120 ns ˚C/W Switching Time Test Circuit (TR) (SBD) No.4552-2/4 FP106 No.4552-3/4 FP106 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 1998. Specifications and information herein are subject to change without notice. PS No.4552-4/4