Ordering number:EN4495 FP202 PNP/NPN Epitaxial Planar Silicon Transistor Push-Pull Circuit Applications Features Package Dimensions · Composite type with 2 transistors (PNP and NPN) contained in one package facilitating high-density mounting. · The FP202 is formed with a chip being equivalent to the 2SA1338 and a chip being equivalent to the 2SC3392, placed in one package. unit:mm 2097A [FP202] 1:Base (PNP TR) 2,7:Collector (PNP TR) 3:Emitter Common 4,6:Collector (NPN TR) 5:Base (NPN TR) SANYO:PCP5 (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol ( ) : PNP Conditions Ratings Unit Collector-to-Base Voltage VCBO (–)60 V Collector-to-Emitter Voltage VCEO VEBO (–)50 V IC (–)500 mA Collector Current (Pulse) ICP (–)800 mA Base Current IB PC (–)0.1 A 0.75 W Emitter-to-Base Voltage Collector Current Collector Dissipation Total Dissipation Junction Temperature PT Tj Storage Temperature Tstg Marking:202 Electrical Connection (–)5 Mounted on ceramic board (250mm2×0.8mm) 1unit Mounted on ceramic board (250mm2×0.8mm) V 1.0 W 150 ˚C –55 to +150 ˚C Continued on next page. Switching Time Test Circuit 1:Base (PNP TR) 2,7:Collector (PNP TR) 3:Emitter Common 4,7:Collector (NPN TR) 5:Base (NPN TR) (Top view) SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)53094TH(KOTO) 8-9784 No.4495-1/5 FP202 Continued from preceding page. Electrical Characteristics at Ta=25˚C Parameter Symbol Conditons Ratings min typ max Unit Collector Cutoff Current ICBO VCB=(–)40V, IE=0 (–)100 nA Emitter Cutoff Current IEBO VEB=(–)4V, IC=0 (–)100 nA DC Current Gain hFE VCE=(–)5V, IC=(–)10mA fT VCE=(–)10V, IC=(–)50mA Gain-Bandwidth Product Output Capacitance Cob 140 VCB=(–)10V, f=1MHz 400 (200) MHz 250 MHz (5.6) pF 3.7 C-E Saturation Voltage VCE(sat) IC=(–)100mA, IB=(–)10mA (–100) B-E Saturation Voltage VBE(sat) IC=(–)100mA, IB=(–)10mA C-B Breakdown Voltage C-E Breakdown Voltage E-B Breakdown Voltage V(BR)CBO IC=(–)10µA, IE=0 V(BR)CEO IC=(–)100µA, RBE=∞ Turn-ON Time V(BR)EBO ton Storage Time tstg Fall Time tf IE=(–)10µA, IC=0 See specified Test Circuit pF (–300) mV 70 200 mV (–)0.8 (–)1.2 V (–)60 V (–)50 V (–)5 V (70) ns See specified Test Circuit 70 ns See specified Test Circuit (400) ns See specified Test Circuit 600 ns See specified Test Circuit (50) ns See specified Test Circuit 70 ns No.4495-2/5 FP202 No.4495-3/5 FP202 No.4495-4/5 FP202 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 1998. Specifications and information herein are subject to change without notice. PS No.4495-5/5