Ordering number:EN4538 FP211 NPN Epitaxial Planar Silicon Transistor Driver Applications Features Package Dimensions · Composite type with 2 transistors (NPN) contained in one package, facilitating high-density mounting. · The FP211 is formed with 2 chips being equivalent to the 2SD1623, placed in one package. unit:mm 2097A [FP211] Electrical Connection 1:Base (NPN TR) 2, 7:Collector (NPN TR) 3:Emitter Common 4, 6:Collector (NPN TR) 5:Base (NPN TR) 1:Base (NPN TR) 2, 7:Collector (NPN TR) 3:Emitter Common 4, 6:Collector (NPN TR) 5:Base (NPN TR) (Top view) SANYO:PCP5 (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 60 V Collector-to-Emitter Voltage VCEO VEBO 50 V 6 V IC 2 A ICP 4 Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current IB Collector Dissipation Total Dissipation PC PT Junction Temperature Tj Storage Temperature Tstg A 400 mA Mounted on ceramic board (250mm2×0.8mm) 1 unit 0.8 W Mounted on ceramic board (250mm ×0.8mm) 1.1 W 150 ˚C –55 to +150 ˚C 2 Electrical Characteristics at Ta=25˚C Parameter Symbol Conditons Ratings min typ max Unit Collector Cutoff Current ICBO VCB=50V, IE=0 100 nA Emitter Cutoff Current IEBO 100 nA DC Current Gain Gain-Bandwidth Product hFE fT VEB=4V, IC=0 VCE=2V, IC=100mA Output Capacitance Cob C-E Saturation Voltage B-E Saturation Voltage C-B Breakdown Voltage VCE(sat) VBE(sat) 140 VCE=10V, IC=50mA 400 150 VCB=10V, f=1MHz MHz 12 pF IC=1A, IB=50mA 0.15 0.4 V IC=1A, IB=50mA 0.9 1.2 V C-E Breakdown Voltage V(BR)CBO IC=10µA, IE=0 V(BR)CEO IC=1mA, RBE=∞ E-B Breakdown Voltage V(BR)EBO IE=10µA, IC=0 60 V 50 V 6 V Turn-ON Time ton See specified Test Circuit 60 ns Storage Time tstg tf See specified Test Circuit 550 ns See specified Test Circuit 30 ns Fall Time Marking:211 SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/53094TH (KOTO) BX-0215 No.4538-1/3 FP211 Switching Time Test Circuit No.4538-2/3 FP211 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 1998. Specifications and information herein are subject to change without notice. PS No.4538-3/3