SILICON SWITCHING NPN TRANSISTOR 2N2222ACSM • High Speed Saturated Switching • Hermetic Surface Mount Package. • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current TA = 25°C Total Power Dissipation at Derate Above 25°C Junction Temperature Range Storage Temperature Range TJ Tstg 75V 50V 6V 0.8A 500mW 2.86mW/°C -65 to +200°C -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJA(1) RθJSP(IS) (1) (2) (2) Max. Units Thermal Resistance, Junction To Ambient 325 °C/W Thermal resistance junction to solder pads (infinite sink mount to PCB). 90 °C/W For non-thermal conductive PCB or unknown PCB surface mount conditions in free air Infinite sink mount to PCB Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 3391 Issue 4 Page 1 of 3 SILICON SWITCHING NPN TRANSISTOR 2N2222ACSM ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols (3) V(BR)CEO ICES Parameters Test Conditions Collector-Emitter Sustaining Voltage Collector-Emitter Cut-Off Current IC = 10mA Collector-Base Cut-Off Current ICBO IEBO Emitter Cut-Off Current Min. IB = 0 Typ. Max. 50 VCE = 50V Units V 50 nA IE = 0 VCB = 75V 10 µA IE = 0 VCB = 60V 10 nA TA = 150°C 10 µA VEB = 4V 10 nA VEB = 6V 10 µA IC = 150mA IB = 15mA 0.3 IC = 500mA IB = 50mA 1.0 IC = 150mA IB = 15mA IC = 500mA IB = 50mA IC = 0.1mA VCE = 10V 50 IC = 1.0mA VCE = 10V 75 IC = 10mA VCE = 10V 100 TA = -55°C 35 IC = 0 ON CHARACTERISTICS VCE(Sat) (3) VBE(Sat) (3) hFE Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain IC = 150mA IC = 500mA 0.6 1.2 V V 2.0 VCE = 10V (1) VCE = 10V (1) 100 325 300 30 SMALL SIGNAL CHARACTERISTICS Cobo Output Capacitance VCB = 10V IE = 0 f = 1.0MHz 8 Cibo Input Capacitance VEB = 0.5V IC = 0 f = 1.0MHz 25 IC = 20mA VCE = 20V f = 100MHz 2.5 - IC = 1.0mA VCE = 10V f = 1.0kHz 50 - |hfe| hfe (3) Magnitude of smallsignal, short-circuit forward current transfer ratio Small Signal Current Gain pF Pulse Width ≤ 300us, δ ≤ 2% Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 3391 Issue 4 Page 2 of 3 SILICON SWITCHING NPN TRANSISTOR 2N2222ACSM SWITCHING CHARACTERISTICS Symbols Parameters Test Conditions ton Saturated Turn-on Time VCC = 30V Saturated Turn-off Time IC = 150mA toff Min. Typ. Max. 35 IB1 = 15mA Units ns 300 MECHANICAL DATA Dimensions in mm (inches) 0.31 rad. (0.012) 3 2 0.76 ± 0.15 (0.03 ± 0.006) 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) 1 1.91 ± 0.10 (0.075 ± 0.004) 0.31 rad. (0.012) 3.05 ± 0.13 (0.12 ± 0.005) A= 1.02 ± 0.10 (0.04 ± 0.004) A 1.40 (0.055) max. LCC1 Underside View Pad 1 - Base Pad 2 - Emitter Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Pad 3 - Collector Website: http://www.semelab-tt.com Document Number 3391 Issue 4 Page 3 of 3