SEME 2N2222A LAB MECHANICAL DATA Dimensions in mm (inches) ( 0 . 2 3 0 ) ( 0 . 2 0 9 ) 4 . 9 5 4 . 5 2 ( 0 . 1 9 5 ) ( 0 . 1 7 8 ) HIGH SPEED MEDIUM POWER, NPN SWITCHING TRANSISTOR 5 .3 3 (0 .2 1 0 ) 4 .3 2 (0 .1 7 0 ) 5 . 8 4 5 . 3 1 ) ) 0 0 1 7 2 1 . . 0 0 ( ( 3 2 3 . 5 4 1 2 .7 (0 .5 0 0 ) m in . 3 . ) 0 0 FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 5 . . 0 . 4 8 0 . 4 1 ( 0 . 0 1 9 ) ( 0 . 0 1 6 ) d ia . 2 . 5 4 N n i 0 ( m 7 . • HIGH SPEED SATURATED SWITCHING 2 1 • ALSO AVAILABLE IN CERAMIC SURFACE MOUNT PACKAGE ( 0 . 1 0 0 ) o m . ! TO–18 METAL PACKAGE (TO-206AA) Underside View PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD PD TJ TSTG Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Collector Current Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating Junction Temperature Storage Junction Temperature Range Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. 75V 40V 6V 800mA 0.5W 3.33mW / °C 1.8W 12.05mW / °C 175°C –65 to +200°C Document Number 3554 Issue 1 SEME 2N2222A LAB ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit V(BR)CEO OFF CHARACTERISTICS Collector – Emitter Sustaining Voltage IC = 10mA IB = 0 40 V V(BR)CBO Collector – Base Breakdown Voltage IC = 10μA IE = 0 75 V V(BR)EBO Emitter – Base Breakdown Voltage IE = 10μA IC = 0 6 V ICEX Collector Cut-off Current VCE = 60V VEB(off) = 3V ICBO Collector – Base Cut-off Current IE = 0 IEBO Emitter Cut-off Current (IC = 0) IBL Base Current 10 nA VCB = 60V 0.01 TA = 150°C 10 μA IC = 0 VEB = 3V 10 nA VCE = 60V VEB(off) = 3V 20 nA IC = 150mA IB = 15mA 0.3 IC = 500mA IB = 50mA 1 IC = 150mA IB = 15mA IC = 500mA IC = 50mA IC = 0.1mA VCE = 10V 35 IC = 1mA VCE = 10V 50 IC = 10mA VCE = 10V 75 TA = –55°C 35 IC = 150mA VCE = 10V 1 100 IC = 150mA VCE = 1V 1 50 IC = 500mA VCE = 10V 1 40 ON CHARACTERISTICS VCE(sat)1 Collector – Emitter Saturation Voltage VBE(sat)1 Base – Emitter Saturation Voltage hFE DC Current Gain fT SMALL SIGNAL CHARACTERISTICS Transition Frequency 2 IC = 20mA Cob Output Capacitance Cib Input Capacitance hfe Small Signal Current Gain td SWITCHING CHARACTERISTICS Delay Time VCC = 30V tr Rise Time ts Storage Time tf Fall Time 0.6 1.2 2 V — 300 MHz VCE = 20V f = 100MHz VCB = 10V IE = 0 f = 100kHz 8 VEB = 0.5V IC = 0 f = 100kHz 25 IC = 1mA VCE = 10V f = 1kHz 50 300 IC = 10mA VCE = 10V f = 1kHz 75 375 300 VBE(off) = 0.5V 10 IC = 150mA IB1 = 15mA 25 VCC = 30V IC = 150mA 225 IB1 = IB2 = 15mA V 60 pF — ns ns NOTES: 1) Pulse test: tp ≤ 300μs , δ ≤ 2% 2) fT is defined as the frequency at which hFE extrapolates to unity. Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Document Number 3554 Issue 1