SEME-LAB 2N3440CSM4R

2N3439CSM4R
2N3440CSM4R
HIGH VOLTAGE, MEDIUM POWER, NPN
TRANSISTOR IN A
HERMETICALLY SEALED
CERAMIC SURFACE MOUNT PACKAGE
FOR HIGH RELIABILITY APPLICATIONS
MECHANICAL DATA
Dimensions in mm (inches)
FEATURES
• Hermetic Ceramic 4 pin Surface Mount
Package - LCC3
1.40 ± 0.15
(0.055 ± 0.006)
5.59 ± 0.13
(0.22 ± 0.005)
• High Voltage Small Signal Type
0.23 rad.
(0.009)
3
4
1.02 ± 0.20
(0.04 ± 0.008)
2
1
1.27 ± 0.05
(0.05 ± 0.002)
0.64 ± 0.08
(0.025 ± 0.003)
3.81 ± 0.13
(0.15 ± 0.005)
0.25 ± 0.03
(0.01 ± 0.001)
• Full Screening Options Available
0.23 min.
(0.009)
• “R” Denotes Reverse Pinning
APPLICATIONS:
2.03 ± 0.20
(0.08 ± 0.008)
LCC3 PACKAGE
Underside View
PAD 1 – Collector
PAD 3 – N/C
PAD 2 – Emitter
PAD 4 – Base
The 2N3439CSM4 and 2N3440CSM4 are high
voltage silicon epitaxial planar transistors mounted
in the popular 4 pin ceramic surface mount
hermetically sealed package. These products are
specifically intended for use in High reliability
systems and can be ordered with a full range of
screening options from standard Militar y
(equivalent to CECC Full Assessment Level)
through all options up to full space flight level.
ABSOLUTE MAXIMUM RATINGS
VCBO
VCEO
VEBO
IC
IB
Ptot
Tstg
Tj
Semelab plc.
Collector – Base Voltage (IE = 0)
Collector – Emitter Voltage (IB = 0)
Emitter – Base Voltage (IB = 0)
Collector Current.
Base Current.
Total Power Dissipation at Tamb = 25°C with product
mounted on a suitable PCB to provide a heat path.
Storage Temperature.
Maximum Junction Temperature.
2N3439CSM4 2N3440CSM4
450V
350V
7V
1A
0.5A
0.5W
300V
250V
7V
1A
0.5A
0.5W
–65 to +200°C
+200°C
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail [email protected]
Website http://www.semelab.co.uk
Prelim. 11/98
2N3439CSM4R
2N3440CSM4R
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
VCEO(sus)*
Test Conditions
Collector – Emitter Sustaining Voltage
IC = 50mA
(IB = 0)
ICEX*
Min.
2N3439CSM4R
350
2N3440CSM4R
250
Typ.
Max. Unit
V
Collector Cut-off Current
2N3439CSM4R
500
(VBE = –1.5V)
2N3440CSM4R
500
Collector – Base Cut-off Current
VCB = 360V 2N3439CSM4R
20
(IE = 0)
VCB = 250V 2N3440CSM4R
20
Collector – Cut-off Current
VCE = 300V 2N3439CSM4R
20
(IB = 0)
VCE = 200V 2N3440CSM4R
50
IEBO*
Emitter Cut-off Current (IC = 0)
VEB = 6V
20
VCE(sat)*
Collector – Emitter Saturation Voltage IC = 50mA
IB = 4mA
0.5
VBE(sat)*
Base – Emitter Saturation Voltage
IC = 50mA
IB = 4mA
1.3
hFE*
DC Current Gain
IC = 20mA
VCE = 10V
ICBO*
ICEO*
A
m
A
m
A
m
A
V
40
—
2N3439CSM4R only
IC = 20mA
m
VCE = 10V
30
* Pulse test tp = 300ms , d £ 2%
DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
fT
Transition Frequency
IC = 10mA
Cob
Output Capacitance
VCB = 10V
hfe
Small Signal Current Gain
IC = 5mA
Semelab plc.
VCE = 10V
f = 5MHz
Min.
Typ.
15
f = 10MHz
VCE = 10V
f = 1kHz
Max. Unit
MHz
10
pF
25
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail [email protected]
Website http://www.semelab.co.uk
Prelim. 11/98