2N2920DCSM–QR–B DUAL NPN TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm (inches) 3 1 4 A 6 5 6.22 ± 0.13 (0.245 ± 0.005) 0.23 rad. (0.009) A= 4.32 ± 0.13 (0.170 ± 0.005) 2.54 ± 0.13 (0.10 ± 0.005) 2 FEATURES 1.40 ± 0.15 (0.055 ± 0.006) 1.65 ± 0.13 (0.065 ± 0.005) 0.64 ± 0.08 (0.025 ± 0.003) 2.29 ± 0.20 (0.09 ± 0.008) • HERMETIC CERAMIC SURFACE MOUNT PACKAGE • BUILT & SCREENED IN ACCORDANCE WITH CECC FULLL ASSESSMENT LEVEL AND SQUENCE B 1.27 ± 0.13 (0.05 ± 0.005) LCC2 PACKAGE Underside View PAD 1 – Collector 1 PAD 4 – Collector 2 PAD 2 – Base 1 PAD 5 – Emitter 2 PAD 3 – Base 2 PAD 6 – Emitter 1 APPLICATIONS: Suitable for use in general purpose differential amplifier applications. ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD TSTG Collector – Base Voltage Collector – Emitter Voltage 1 Emitter – Base Voltage Collector Current Total Device Dissipation Derate above 25°C Storage Temperature Range EACH SIDE TOTAL DEVICE 60V 60V 5V 50mA 300mW 500mW 1.72mW / °C 2.86mW / °C –65 to 200°C NOTES 1. Base – Emitter Diode Open Circuited. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim.11/98 2N2920DCSM–QR–B ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated) Parameter Test Conditions 1 Min. Typ. Max. Unit INDIVIDUAL TRANSISTOR CHARACTERISTICS IC = –10mA V(BR)CBO Collector – Base Breakdown Voltage IE = 0 60 V(BR)CEO* Collector – Emitter Breakdown Voltage IC = –10mA IB = 0 60 V(BR)EBO Emitter – Base Breakdown Voltage IE = –10mA IC = 0 5 ICBO Collector Cut-off Current VCB = –50V IE = 0 10 nA TA = 150°C 10 mA IEBO Emitter Cut-off Current VEB = –4V IC = 0 20 nA IC = 10mA VCE = 5V 100 IC = –100mA VCE = 5V 150 TA = –55°C 75 IC = –500mA VCE = –5V 150 450 IC = –1mA VCE = –5V 150 450 IC = –10mA VCE = –5V * 125 IC = –100mA VCE = –5V –0.7 IB = –10mA IC = –100mA –0.7 IB = –100mA IC = –1mA –0.8 IB = –10mA IC = –100mA –0.2 IB = –100mA IC = –1mA –0.25 hFE VBE DC Current Gain Base – Emitter Voltage VCE(sat) Collector – Emitter Saturation Voltage hie Small Signal Common – Emitter Input Impedance hfe Small Signal Common – Emitter Current Gain hre Small Signal Common – Emitter Reverse Voltage Gain hoe Small Signal Common – Emitter 30 150 600 V V kW — 25 x 10 -4 f = 1kHz 5 Small Signal Common – Emitter f = 30MHz Current Gain VCE = –5V IC = –500mA IC = –1mA f = 100MHz Cibo 3 — IC = –1mA VCE = –5V Cobo 450 VCE = –10V Output Admittance |hfe| V Common – Base Open Circuit VCB = –5V Output Capacitance f = 100kHz Common – Base Open Circuit VEB = –0.5V Input Capacitance f = 100kHz IE = 0 IC = 0 60 mmho 1 — 1 5 4 pF 8 NOTES * Pulse Test: tp = 300ms, d £ 2%. 1) Terminals not under test are open circuited under all test conditions. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim.11/98 2N2920DCSM–QR–B ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated) Parameter Test Conditions TRANSISTOR MATCHING CHARACTERISTICS hFE1 Static Forward Current Gain VCE = –5V hFE2 Balance Ratio |VBE1 – VBE2| Base – Emitter Voltage Differential |D(VBE1 – VBE2)DTA| Base – Emitter Voltage Differential IC = –100mA See Note 2. Min. Typ. 0.9 1 VCE = –5V IC = –100mA VCE = –5V IC = –100mA TA1 = 25°C TA2 = –55°C VCE = –5V IC = –100mA TA1 = 25°C TA2 = 125°C — 5 IC = –10mA to –10mA VCE = –5V Max. Unit mV 3 0.8 mV 1 OPERATING CHARACTERISTICS (Tamb = 25°C unless otherwise stated) Parameter Test Conditions 1 INDIVIDUAL TRANSISTOR CHARACTERISTICS VCE = –10V RG = 3kW Min. Typ. Max. Unit IC = –100mA f = 100Hz 7 Noise Bandwidth = 20Hz F Spot Noise Figure VCE = –10V IC = –100mA RG = 3kW f = 1kHz 3 dB Noise Bandwidth = 200Hz VCE = –10V IC = –100mA RG = 3kW f = 10kHz 2.5 Noise Bandwidth = 2kHz VCE = –10V _ F Average Noise Figure IC = –100mA RG = 3kW Noise Bandwidth = 15.7kHz 3.5 dB See Note 3. NOTES 1) Terminals not under test are open circuited under all test conditions. 2) The lower of the two readings is taken as hFE1. 3) Average noise figure is measured in an amplifier with response down 3dB at 10Hz and 10 kHz and a high frequency rolloff of 6dB / octave. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim.11/98 2N2920DCSM–QR–B THERMAL INFORMATION PT M axim um Continuous D issipation (W ) 0.8 0.7 0.6 0.5 TO TA L D EVIC E 0.4 EAC H TR AN SISTO R 0.3 0.2 0.1 0.0 0 25 50 75 100 125 150 175 200 TA Free Air Temperature (˚C) Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim.11/98 2N2920DCSM–QR–B Inspection Level for CECC Fully Assessed Devices - Level F IL = Inspection levels AQL = Acceptable quality Level (%) Group A – Lot by Lot Inspection Levels of Quality Assessment Level F Observations IL AQL Examination or test SUB-GROUP A1 Visual inspection SUB-GROUP A2a Non operatives SUB-GROUP A2b Primary dc Charateristics Electrical Measurements Other dc Charateristics SUB-GROUP A3 Electrical Measurements ac Characteristics SUB-GROUP A4 Electrical Measurements IL SUB-GROUP B1 Dimensions SUB-GROUP B2c Verification of ratings SUB-GROUP B3 Lead bending if applicable SUB-GROUP B4 Solderability I 0.65 II 0.15 II 0.65 if < 4 tests iI 1.0 If ³ 4 tests I 2.5 if < 4 tests I 4 If ³ 4 tests S4 4 if < 4 tests S4 6.5 If ³ 4 tests IL = Inspection level amb = ambient rated case = case rated AQL in (%) c = acceptance criterion n = sample size Group B – Lot by Lot Inspection Examination or test NOTES Levels of Quality Assessment Level F AQL NOTES S2 2.5 S4 4 S3 2.5 S4 2.5 S4 2.5 SEE C5 S4 1.5 SEE C8 SEE C2c SUB-GROUP B5 Change of temp followed by acc. Damp heat or sealing. SUB-GROUP B8 Electrical Endurance SUB-GROUP CTR Unless otherwise stated in detail specification: attributes information for B3 B4 B5 B8 Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim.11/98 2N2920DCSM–QR–B Group C – Periodic Inspection Examination or test n/c SUB-GROUP C1 P = periodicity (months) na = not applied Levels of Quality Assessment F (p= 3 months) NOTES 8/1 Dimensions SUB-GROUP C2a Electrical Measurements SUB-GROUP C2b Complementary Characteristics SUB-GROUP C2c Verification of Ratings SUB-GROUP C3 Tensile / Torque (if applicable) SUB-GROUP C4 13/1 18/1 13/1 When not in B2c 8/1 18/1 Soldering Heat SUB-GROUP C5 Change of temp followed by acc. na see B5 Damp heat or sealing. SUB-GROUP C6 Shock acceleration vibration SUB-GROUP C7 Damp heat (if applicable) 8/1 18/1 SUB-GROUP C8 43/3 amb Electrical Endurance 34/2 case SUB-GROUP C9 43/3 amb Storage at high temp 34/2 case SUB-GROUP CTR Semelab plc. Unless otherwise stated in detail specification: attributes information for C3, C5, C6, C9. Measurement inofrmation before and after C8 Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim.11/98 2N2920DCSM–QR–B Screening According to CECC Sequence B SEQUENCE B 24 Hour High Temperature Storage Rapid change of Temperature Acceleration Test Fine & Gross Leak Test Test Electrical Characteristics 72 Hour Burn-In Electrical Operation (ambient rated) or High Temperature Reverse Bias (case rated) Test Electrical Characteristics Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim.11/98