2N3735CSM4 Medium Current NPN Silicon Annular Transistors Designed for High-Speed Switching and Driver Applications in a Ceramic Surface Mount Package MECHANICAL DATA Dimensions in mm (inches) 1.40 ± 0.15 (0.055 ± 0.006) 5.59 ± 0.13 (0.22 ± 0.005) FEATURES 0.23 rad. (0.009) 3 2 4 1 1.27 ± 0.05 (0.05 ± 0.002) 0.64 ± 0.08 (0.025 ± 0.003) 3.81 ± 0.13 (0.15 ± 0.005) 0.25 ± 0.03 (0.01 ± 0.001) • High Voltage • Ceramic Surface Mount Package 0.23 min. (0.009) • Screening Options Available 2.03 ± 0.20 (0.08 ± 0.008) 1.02 ± 0.20 (0.04 ± 0.008) LCC3 PACKAGE Underside View PAD 1 – Collector PAD 3 – Emitter PAD 2 – N/C PAD 4 – Base ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCB VCEO VEBO IC PD Rqja TJ Tstg Semelab plc. Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Collector Current Total Device Dissipation TA = 25 °C Thermal Resistance Junction to Ambient Junction to Ambient Storage Temperature Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk 75V 50V 5V 1A 0.5W 2.9mW/°C 200°C –65 to 200°C Prelim. 6/00 2N3735CSM4 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit OFF CHARACTERISTICS BVCBO Collector-Emitter Breakdown Voltage1 IC = 10mA IC = 10mA Collector-Base Breakdown Voltage BVEBO Emitter-Base Breakdown Voltage ICEX Collector Cutoff Current IBL Base Cutoff Current BVCEO IB = 0 50 IE = 0 75 IE= 10mA IC = 0 5 VCE = 40V VEB = 2 V 0.20 TA = 100°C 20 VCE = 40V VEB = 2 0.3 IC = 10mA VCE = 1V 35 IC = 150mA VCE = 1V 40 IC = 500mA VCE = 1V 35 IC = 1A VCE = 1.5V 20 IC = 10mA IB = 1mA 0.2 IC = 150mA IB = 15mA 0.3 IC = 500mA IB = 50mA 0.5 IC = 1A IB = 100mA 0.9 IC = 10mA IB = 1mA 0.8 IC = 150mA IB = 15mA 1.0 IC = 500mA IB = 50mA 1.2 IC = 1A IB = 100mA VCB = 10V IE = 0 mA ON CHARACTERISTICS hFE VCE(SAT) VBE(SAT) DC Current Gain1 Collector- Saturation Voltage1 Base-Emitter Saturation Voltage1 0.9 — 80 V V 1.4 DYNAMIC CHARACTERISTICS Cob Output Capacitance 9.0 f = 100KHZ VBE = 0.5V pF IC = 0 80 Cib Input Capacitance hfe High Frequency Current Gain td Delay Time VCC = 30V VBE(off) = 2V 8 tr Rise Time IC = 1A IB1 = 100mA 40 ts Storage Time VCC = 30V IC = 1A 30 tf Fall Time IB1 = - IB2 = 100mA QT Total Control Charge f = 100KHZ VCE = 10V IC = 50mA f = 100MHZ IC = 1A IB = 100mA VCC = 30V — 2.5 ns 30 10 nC 1) Pulse test : Pulse Width# 300ms , Duty Cycle # 2% Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 6/00