2N2894ACSM HIGH SPEED, MEDIUM POWER, PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm (inches) FEATURES • SILICON PLANAR EPITAXIAL PNP TRANSISTOR 0.31 rad. (0.012) 3 2 • HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE) 0.76 ± 0.15 (0.03 ± 0.006) 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) 1 1.91 ± 0.10 (0.075 ± 0.004) • SCREENING OPTIONS AVAILABLE A 0.31 rad. (0.012) 3.05 ± 0.13 (0.12 ± 0.005) A= 1.40 (0.055) max. 1.02 ± 0.10 (0.04 ± 0.004) APPLICATIONS: SOT23 CERAMIC (LCC1 PACKAGE) Underside View PAD 1 – Base PAD 2 – Emitter • HIGH SPEED, LOW SATURATION SWITCH PAD 3 – Collector Hermetically sealed surface mount version of the popular 2N2894A for high reliability applications requiring small size and low weight devices. ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage -12V VCEO Collector – Emitter Voltage -12V VEBO Emitter – Base Voltage -4V IC Collector Current PD Total Device Dissipation 200mA @ TA =25°C Derate above 25°C TSTG , TJ Semelab plc. Operating and Storage Temperature Range Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk 360mW 2.06mW / °C –65 to +200°C Prelim. 3/00 2N2894ACSM ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit V(BR)CBO* Collector – Base Breakdown Voltage IC = 10mA IE = 0 – 12 V(BR)CEO Collector – Emitter Breakdown Voltage IC = 10mA IB = 0 – 12 V(BR)EBO Emitter – Base Breakdown Voltage IE = 10mA IC = 0 –4 ICBO Collector Cut-off Current VCB = –6V Tamb = 125°C – 10 ICES Collector Cut-off Current VBE = 0 VCE = –6V – 80 IC = –10mA IB = –1mA –0.15 IC = –30mA IB = –3mA –0.20 IC = –100mA IB = –10mA – 0.50 IC = –10mA IB = –1mA –0.78 –0.98 IC = –30mA IB = –3mA –0.85 –1.2. IC = –100mA IB = –10mA IC = –10mA VCE = –0.3V 30 IC = –30mA VCE = –0.5V 40 IC = –100mA VCE = –1V 25 IC = –30mA VCE = –0.5V VCE(sat) VBE(sat) hFE Collector – Emitter Saturation Voltage Base – Emitter On Voltage DC Current Gain Tamb = 125°C fT Current Gain Bandwidth Product Cebo Emitter – Base – Capacitance Ccbo Collector – Base – Capacitance ton Turn on Time toff Turn off Time VCE = –10V f = 100MHz IC = –30mA VEB = –5V IC = 0 f = 1MHz VCB = –5V IC = 0 f = 1MHz IC = –30mA VCE = –2V IB2 = –1.5mA IC = –30mA VCE = –2V IB1 = IB2= –1.5mA V nA V V –1.7 150 –— 17 400 MHz 6 pF 6 pF 60 ns 9 ns * Pulse Test: tp £ 300ms, d £ 2%. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 3/00