2N5679 2N5680 SEME LAB MECHANICAL DATA Dimensions in mm (inches) PNP SILICON TRANSISTORS 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 5 .0 8 (0 .2 0 0 ) ty p . 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) ! 2 .5 4 (0 .1 0 0 ) 0 .6 6 (0 .0 2 6 ) 1 .1 4 (0 .0 4 5 ) 1 2 .7 0 (0 .5 0 0 ) m in . 0 .8 9 m a x . (0 .0 3 5 ) 0 .7 1 (0 .0 2 8 ) 0 .8 6 (0 .0 3 4 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) d ia . 4 5 ° DESCRIPTION The 2N5679 and 2N5680 are silicon expitaxial planar PNP transistors in jedec TO-39 metal case intended for use as drivers for high power transistors in general purpose, amplifier and switching circuit The complementary NPN types are the 2N5681 and 2N5682 respectively TO-39 Pin 1 – Emitter Pin 2 – Base Pin 3 – Collector ABSOLUTE MAXIMUM RATINGS TCASE = 25°c unless otherwise stated 2N5679 2N5680 VCBO Collector – Base Voltage -100V -120V VCEO Collector – Emitter Voltage (IB = 0) -100V -120V VEBO Emitter – Base Voltage (IC = 0) -4V IC Continuous Collector Current -1A IB Base Current -0.5A Ptot Total Dissipation at Tcase £ 25°C 10W Tamb £ 25°C 1W Tstg Operating and Storage Temperature Range Tj Junction temperature Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk –65 to +200°C 200°C Prelim. 3/00 2N5679 2N5680 SEME LAB THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 17.5 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 175 °C/W ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit µA IE = 0 ICBO ICEV Collector Cut Off Current Collector Cut Off Current for 2N5679 VCB = -100V -1 for 2N5680 VCB = -120V -1 for 2N5679 VCE = -100V -1 for 2N5680 VCE = -120V -1 Tcase = 150°C for 2N5679 VCE = -100V -1 for 2n5680 VCE = -120V -1 for 2N5679 VCE = -70V -10 for 2N5680 VCE = -80V -10 IC = 0 VEB = -4V -1 IB = 0 IC = -10mA VBE = 1.5 µA mA IB = 0 ICEO IEBO Collector Cut Off Current Emitter Cut Off Current VCEO(sus)* Collector Emitter Sustaining Voltage VCE(sat)* Collector Emitter Saturation Voltage VBE* Base Emitter Voltage hFE* DC Current Gain fT Transistion Frequency CCBO Collector Base Capacitance hfe Small Signal Current Gain for 2N5679 -100 for 2N5680 -120 IC = -250mA IB = -25mA -0.6 IC = -500mA IB = -50mA -1 IC = -1A IB = -200mA -2 IC = -250mA VCE = -2V -1 IC = -250mA VCE = -2V 40 IC = -1A VCE = -2V 5 IC = -100mA VCE = -10V f = 10MHz IE = 0 IC = -0.2A VCE = -1.5V f = 1KHz MHz 50 f = 1MHz V 150 30 VCB = -20V µA pF 40 * Pulse test tp = 300ms , d < 2% Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 3/00