BFY84 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.335) 9.40 (0.370) SILICON PLANAR EPITAXIAL NPN TRANSISTOR 6.10 (0.240) 6.60 (0.260) 7.75 (0.305) 8.51 (0.335) 12.7 (0.500) Min. 1.02 (0.040) Max. 0.41 (0.016) 0.53 (0.021) DESCRIPTION 5.08 (0.200) The BFY84 is a six terminal device containing two isolated silicon planar epitaxial NPN transistors in Jedec TO77 metal case. 2.54 (0.100) 4 2.54 (0.100) 3 5 The good thermal tracking over a wide current and temperature range, offers the circuit designer matched transistors with specified performance for differential amplifiers. 0.74 (0.029) 1.14 (0.045) 6 2 1 45˚ 0.71 (0.028) 0.86 (0.034) TO77 Pin 1 – Collector 1 Pin 4 – Emitter 2 Pin 2 – Base 1 Pin 5 – Base 2 Pin 3 – Emitter 1 Pin 6 – Collector 2 ABSOLUTE MAXIMUM RATINGS VCBO Collector – Base Voltage (IE = 0) 30V VCEO Collector – Emitter Voltage (IB = 0) 12V VEBO Emitter – Base Voltage (IC = 0) 3V IC Collector Current Ptot Total Dissipation at Tstg,Tj Semelab plc. 200mA Tamb £ 25°C (one side) 0.3W Tamb £ 25°C (both sides) 0.38W Tcase £ 25°C (one side) 0.6W Tcase £ 25°C (both sides) 0.98W Tcase £ 100°C (one side) 0.34W Tcase £ 100°C (both sides) 0.56W Storage and Junction Temperature Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk –65 to +200°C Prelim. 5/99 BFY84 THERMAL DATA One side Both Sides Rthj-case Thermal Resistance Junction-case Max 292 178 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 583 460 °C/W ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit VCB = 15V IE = 0 10 nA VCB = 15V Tamb =150°C 1 mA Collector Base Breakdown Voltage IC = 1mA IE = 0 30 V VCEO(sus)* Collector Emitter Sustaining Voltage IC = 3mA IB = 0 12 V V(BR)EBO Emitter Base Breakdown Voltage IC = 0 IE = 10mA 3 V VCE(sat) Collector Emitter Saturation Voltage IC = 10mA IB = 1mA 0.4 V VBE(sat) Base Emitter Saturation Voltage IC = 10mA IB = 1mA 1 V lVBE1-VBE2l Input Offset Voltage IC = 3mA VCE = 1V 15 mV lVBE1-VBE2l Input Offset Voltage Temperature IC = 3mA VCE = 1V 25 mV/°C ICBO Collector Cut Off Current V(BR)CBO ÎT Coefficient hFE DC Current Gain IC = 3mA VCE = 1V hFE1/hFE2 Matched Pair Ratio IC = 3mA VCE = 1V fT Transistion Frequency IC = 4mA VCE = 10v CEBO Emitter Base Capacitance CCBO Collector Base Capacitance NF Noise Figure f = 100MHz IC = 0 VEB = 0.5V f = 1MHz IE = 0 VCB = -10V f = 1MHz IC =1mA VCE = 6V f = 60MHz 20 1.25 — MHz 600 2 pF 1.7 pF 6 dB * Pulse test tp = 300ms , Duty Cycle = 1% Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 5/99