SEME-LAB 2N5784

2N5784
MECHANICAL DATA
Dimensions in mm (inches)
8.89 (0.35)
9.40 (0.37)
SILICON EPITAXIAL
NPN TRANSISTOR
7.75 (0.305)
8.51 (0.335)
4.19 (0.165)
4.95 (0.195)
FEATURES
0.89 max.
(0.035)
12.70
(0.500)
min.
General purpose power transistor for
switching and linear applications in a
hermetic TO–39 package.
7.75 (0.305)
8.51 (0.335)
dia.
5.08 (0.200)
typ.
2.54
(0.100)
2
1
3
0.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
45˚
TO–39 PACKAGE
PIN 1 – Emitter
PIN 2 – Base
PIN 3 – Collector
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
VCER(sus)
VCEO(sus)
VEBO
IC
IB
PD
PD
TJ , TSTG
TL
Collector – Base Voltage
Collector – Emitter Sustaining Voltage RBE = 100W
Collector – Emitter Sustaining Voltage
Emitter – Base Voltage
Continuous Collector Current
Continuous Collector Current
Total Device Dissipation
TA = 25°C
Derate above 25°C
Total Device Dissipation
TC = 25°C
Derate above 25°C
Operating Junction and Storage Temperature Range
Lead temperature, ³ 1/32” (0.8mm) from seating plane for 10 s max.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
80V
80V
65V
5V
3.5A
1A
10W
0.057W/°C
1W
0.0057W/°C
–65 to +200°C
230°C
Prelim. 8/96
2N5784
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Parameter
Test Conditions
VCE = 65V
Min.
Typ.
Max.
10
Unit
mA
ICER
Collector Cut-off Current
ICEX
Collector Cut-off Current
ICEO
Collector Cut-off Current
VCE = 50V
IB = 0
100
IEBO
Emitter Cut-off Current
VBE = -5V
IC = 0
10
hFE*
DC Current Gain
VCE = 2V
IC = 1A
20
VCE = 2V
IC = 3.2A
4
IB = 0
65
RBE = 100W
TC = 150°C
1
VCE = 75V
VBE = -1.5V
10
mA
TC = 150°C
1
mA
RBE = 100W
VCEO(sus)* Collector – Emitter Sustaining Voltage 1 IC = 100mA
100
RBE = 100W
VCE = 2V
IC = 1A
1.5
IC = 1A
IB = 100mA
0.5
Small Signal Common – Emitter
VCE = -2V
IC = 100mA
Current Gain
f = 200kHz
Small Signal Common – Emitter
VCE = 2V
Current Gain
f = 1kHz
tON
Turn-on Time
VCE = 30V
tOFF
Turn-off Time
RqJC
Thermal Resistance Junction – Case
17.5
RqJA
Thermal Resistance Junction – Ambient
17.5
VBE
VCE(sat)
½hfe½
hfe
Base – Emitter Voltage
Collector – Emitter Saturation Voltage
2
IC = 100mA
IC = 1A
IB1 = IB2 = 100mA
80
5
mA
mA
—
V
IC = 100mA
VCER(sus)* Collector – Emitter Sustaining Voltage
1
mA
20
V
—
—
25
5
15
ms
°C/W
NOTES
*
1)
2)
3)
Pulse Test: tp = 300ms, d = 1.8%.
These tests MUST NOT be measured on a curve tracer.
Measured 1/4” (6.35 mm) from case. Lead resistance is critical in this test.
Measured at a frequency where ½hfe½ is decreasing at approximately 6dB per octave.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
Prelim. 8/96