2N5784 MECHANICAL DATA Dimensions in mm (inches) 8.89 (0.35) 9.40 (0.37) SILICON EPITAXIAL NPN TRANSISTOR 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) FEATURES 0.89 max. (0.035) 12.70 (0.500) min. General purpose power transistor for switching and linear applications in a hermetic TO–39 package. 7.75 (0.305) 8.51 (0.335) dia. 5.08 (0.200) typ. 2.54 (0.100) 2 1 3 0.66 (0.026) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 45˚ TO–39 PACKAGE PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCER(sus) VCEO(sus) VEBO IC IB PD PD TJ , TSTG TL Collector – Base Voltage Collector – Emitter Sustaining Voltage RBE = 100W Collector – Emitter Sustaining Voltage Emitter – Base Voltage Continuous Collector Current Continuous Collector Current Total Device Dissipation TA = 25°C Derate above 25°C Total Device Dissipation TC = 25°C Derate above 25°C Operating Junction and Storage Temperature Range Lead temperature, ³ 1/32” (0.8mm) from seating plane for 10 s max. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk 80V 80V 65V 5V 3.5A 1A 10W 0.057W/°C 1W 0.0057W/°C –65 to +200°C 230°C Prelim. 8/96 2N5784 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Parameter Test Conditions VCE = 65V Min. Typ. Max. 10 Unit mA ICER Collector Cut-off Current ICEX Collector Cut-off Current ICEO Collector Cut-off Current VCE = 50V IB = 0 100 IEBO Emitter Cut-off Current VBE = -5V IC = 0 10 hFE* DC Current Gain VCE = 2V IC = 1A 20 VCE = 2V IC = 3.2A 4 IB = 0 65 RBE = 100W TC = 150°C 1 VCE = 75V VBE = -1.5V 10 mA TC = 150°C 1 mA RBE = 100W VCEO(sus)* Collector – Emitter Sustaining Voltage 1 IC = 100mA 100 RBE = 100W VCE = 2V IC = 1A 1.5 IC = 1A IB = 100mA 0.5 Small Signal Common – Emitter VCE = -2V IC = 100mA Current Gain f = 200kHz Small Signal Common – Emitter VCE = 2V Current Gain f = 1kHz tON Turn-on Time VCE = 30V tOFF Turn-off Time RqJC Thermal Resistance Junction – Case 17.5 RqJA Thermal Resistance Junction – Ambient 17.5 VBE VCE(sat) ½hfe½ hfe Base – Emitter Voltage Collector – Emitter Saturation Voltage 2 IC = 100mA IC = 1A IB1 = IB2 = 100mA 80 5 mA mA — V IC = 100mA VCER(sus)* Collector – Emitter Sustaining Voltage 1 mA 20 V — — 25 5 15 ms °C/W NOTES * 1) 2) 3) Pulse Test: tp = 300ms, d = 1.8%. These tests MUST NOT be measured on a curve tracer. Measured 1/4” (6.35 mm) from case. Lead resistance is critical in this test. Measured at a frequency where ½hfe½ is decreasing at approximately 6dB per octave. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 8/96