BDX14AA PNP SILICON TRANSISTOR, EPITAXIAL BASE MECHANICAL DATA Dimensions in mm 6.35 (0.250) 8.64 (0.340) 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 3.61 (0.142) 3.86 (0.145) rad. 14.48 (0.570) 14.99 (0.590) 24.33 (0.958) 24.43 (0.962) 3.68 (0.145) rad. max. FEATURES: • LF Large Signal Power Amplification • Medium Current Switching 1.27 (0.050) 1.91 (0.750) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. TO66 Package. Pin 1 – Base Pin 2 – Emitter Case - Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO Collector – Base Voltage (Open Emitter) - 90V VCEO Collector – Emitter Voltage (Open Base) - 55V VCER Collector – Emitter Voltage RBE =100W - 60V VCEX Collector – Base Voltage VBE = +1.5V - 90V VEBO Emitter – Base Voltage -7V IC Collector Current -4V IB Base Current -2V Ptot Power Dissipation 29W TJ Maximum Junction Temperature TSTG Storage Temperature Rth-(j-c) Junction to Case. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk 200°C –65 to 200°C 6°C / W Prelim. 02/00 BDX14AA ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter ICEX Collector Emitter Cut Off Current Test Conditions VCE = -90V VBE = +1.5V VCE = -30V VBE = +1.5V Min. Max. Unit -1 -5 Tcase = 150°C IB = 0 Typ. VCEO(SUS)* Collector Emitter Breakdown Voltage IC = -100mA -55 VCER(SUS)* Collector Emitter Breakdown Voltage IC = -100mA RBE = 100W V(BR)EBO* Emitter Base Breakdown Voltage IE = -1A IC =0 -7 h21E* Static Forward Current Transfer Ratio VCE = - 4V IC = - 0.5A 25 VCE(sat)* Collector Emitter Saturation Voltage IC = - 0.5A VBE* Base Emitter Voltage fT Transition Frequency mA V -60 V 250 — IB = - 0.05A -1 V VCE = - 4V IC = - 0.5A -1.7 V VCB = -10V IC = - 0.2A f = 1MHz 4 MHz * Pulse test tp = 300ms , d < 2% Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 02/00