BFY90 MECHANICAL DATA Dimensions in mm (inches) 4.95 (0.195) 4.52 (0.178) SILICON PLANAR EPITAXIAL NPN TRANSISTOR 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 0.48 (0.019) 0.41 (0.016) dia. DESCRIPTION The BFY90 is a low noise transistor intended for use in broad and narrow-band amplifiers up to 1GHz. 2.54 (0.100) Nom. 4 3 1 2 TO72 Pin 1 – Emitter Pin 3 – Collector Pin 2 –Base Pin 4 – Connected to Case ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise stated) VCBO Collector – Base Voltage 30V VCER Collector – Emitter Voltage (RBE £ 50W ) 30V VCEO Collector – Emitter Voltage 15V VEBO Emitter – Base Voltage 2.5v IC(AV) Average Collector Current 25mA ICM Peak Collector Current (f ³1MHz) 50mA Ptot Power Dissipation at Tamb = 25°C 200mW°C Tj Storage Temperature 200°C Tstg, Junction Temperature –65 to +200°C Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: [email protected] Prelim. 12/99 BFY90 ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit 10 nA ICBO Collector Cut Off Current VCB = 15V IE = 0 V(BR)CEO* Collector Emitter Breakdown Voltage IC = 10mA IB = 0 15 V(BR)CER* Collector Emitter Breakdown Voltage IC = 10mA RBE £ 50W 30 VCEK Collector Emitter Knee Voltage IC = 10mA Static Forward Current Transfer VCE = 1V IC = 2mA 25 150 Ratio VCE = 1V IC = 25mA 20 125 VCE = 5V IC = 2mA h21E V 0.75 — DYNAMIC CHARACTERISTICS fT Transition Frequency f = 500MHz VCE = 5V 1 GHz IC = 25mA 1.3 f = 500MHz C22b(1) C12e(2) NF Gp PO(2) Output Capacitance VCB = 10V f = 1MHz Open-Circuit Reverse Transfer VCE = 5V Capacitance f = 1MHz Noise Figure Power Gain Output Power IE = 0. IC = 0 VCE = 5V IC = 2mA f = 100kHz RG VCE = 5V IC = 2mA f = 200MHz RG VCE = 5V IC = 2mA f = 500MHz RG = 50W VCE = 5V IC = 2mA f = 800MHz RG VCE = 10V IC = 14mA 0.8 pF 4 3.5 optimum dB 5 5 optimum VCE = 10V IC = 14mA f1 = 202MHz f2= 205MHz Output SWR £ 2 £ pF optimum f = 200MHz TOS sortie 1.5 21 dB 10 mW 2 dIM* = - 30dB at 2 f2 - f1 = 208MHz THERMAL DATA Rth(j-a) Junction-ambient thermal resistance £ 0.875 Max °C/W Rth(j-c) Junction-case thermal resistance £ 0.575 Max °C/W * Pulse test tp = 300ms , d £ 2% (1) Shield Lead (case) not connected * Intermodulation Distortion Semelab plc. (2) Shield Lead (case) grounded Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: [email protected] Prelim. 12/99