TI UC3611

UC1611
UC3611
Quad Schottky Diode Array
FEATURES
DESCRIPTION
•
Matched, Four-Diode Monolithic Array
•
High Peak Current
•
Low-Cost MINIDIP Package
•
Low-Forward Voltage
This four-diode array is designed for general purpose use as individual
diodes or as a high-speed, high-current bridge. It is particularly useful on
the outputs of high-speed power MOSFET drivers where Schottky diodes
are needed to clamp any negative excursions caused by ringing on the
driven line.
•
Parallelable for Lower VF or Higher IF
•
Fast Recovery Time
•
Military Temperature Range Available
These diodes are also ideally suited for use as voltage clamps when driving inductive loads such as relays and solenoids, and to provide a path
for current free-wheeling in motor drive applications.
The use of Schottky diode technology features high efficiency through
lowered forward voltage drop and decreased reverse recovery time.
This single monolithic chip is fabricated in both hermetic CERDIP and
copper-leaded plastic packages. The UC1611 in ceramic is designed for
-55°C to +125°C environments but with reduced peak current capability:
while the UC3611 in plastic has higher current rating over a 0°C to +70°C
ambient temperature range.
CONNECTION DIAGRAM
DIL-8 (TOP VIEW)
N or J Package
PLCC-20 (TOP VIEW)
Q Package
6/93
SOIC-16 (TOP VIEW)
DW Package
UC1611
UC3611
ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage (per Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Diode-to-Diode Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Peak Forward Current
UC1611 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
UC3611 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Power Dissipation at TA = +70°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
Lead Temperature (Soldering, 10 Seconds). . . . . . . . . . . . . . . . . . . . . . . +300°C
Note: Please consult Packaging Section of Databook for thermal limitations and
considerations of package.
ELECTRICAL CHARACTERISTICS: All specifications apply to each individual diode. TJ = +25°C except as noted.
TA = TJ.
PARAMETER
Forward Voltage Drop
Leakage Current
Reverse Recovery
TEST CONDITIONS
MIN.
TYP.
0.3
0.4
0.7
IF = 1A
0.9
1.2
V
VR = 40V
0.01
0.1
mA
VR = 40V, TJ = +100°C
0.1
1.0
mA
0.5A Forward to 0.5A Reverse
20
IF = 100mA
Forward Recovery
1A Forward to 1.1V Recovery
Junction Capacitance
VR = 5V
MAX. UNITS
V
ns
40
ns
100
pF
Note: At Forward currents of greater than 1.0A, a parasitic current of approximately 10mA may be collected by adjacent diodes.
Reverse Current vs Voltage
Forward Current vs Voltage
2
UC1611
UC3611
TYPICAL APPLICATIONS
A. Clamp Diodes - PWMS and Drivers
B. Transformer Coupled Drive Circuits
C. Linear Regulations
UNITRODE INTEGRATED CIRCUITS
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TEL. (603) 424-2410 • FAX (603) 424-3460
3
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