UC1611 UC3611 Quad Schottky Diode Array FEATURES DESCRIPTION • Matched, Four-Diode Monolithic Array • High Peak Current • Low-Cost MINIDIP Package • Low-Forward Voltage This four-diode array is designed for general purpose use as individual diodes or as a high-speed, high-current bridge. It is particularly useful on the outputs of high-speed power MOSFET drivers where Schottky diodes are needed to clamp any negative excursions caused by ringing on the driven line. • Parallelable for Lower VF or Higher IF • Fast Recovery Time • Military Temperature Range Available These diodes are also ideally suited for use as voltage clamps when driving inductive loads such as relays and solenoids, and to provide a path for current free-wheeling in motor drive applications. The use of Schottky diode technology features high efficiency through lowered forward voltage drop and decreased reverse recovery time. This single monolithic chip is fabricated in both hermetic CERDIP and copper-leaded plastic packages. The UC1611 in ceramic is designed for -55°C to +125°C environments but with reduced peak current capability: while the UC3611 in plastic has higher current rating over a 0°C to +70°C ambient temperature range. CONNECTION DIAGRAM DIL-8 (TOP VIEW) N or J Package PLCC-20 (TOP VIEW) Q Package 6/93 SOIC-16 (TOP VIEW) DW Package UC1611 UC3611 ABSOLUTE MAXIMUM RATINGS Peak Inverse Voltage (per Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Diode-to-Diode Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Peak Forward Current UC1611 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A UC3611 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Power Dissipation at TA = +70°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C Lead Temperature (Soldering, 10 Seconds). . . . . . . . . . . . . . . . . . . . . . . +300°C Note: Please consult Packaging Section of Databook for thermal limitations and considerations of package. ELECTRICAL CHARACTERISTICS: All specifications apply to each individual diode. TJ = +25°C except as noted. TA = TJ. PARAMETER Forward Voltage Drop Leakage Current Reverse Recovery TEST CONDITIONS MIN. TYP. 0.3 0.4 0.7 IF = 1A 0.9 1.2 V VR = 40V 0.01 0.1 mA VR = 40V, TJ = +100°C 0.1 1.0 mA 0.5A Forward to 0.5A Reverse 20 IF = 100mA Forward Recovery 1A Forward to 1.1V Recovery Junction Capacitance VR = 5V MAX. UNITS V ns 40 ns 100 pF Note: At Forward currents of greater than 1.0A, a parasitic current of approximately 10mA may be collected by adjacent diodes. Reverse Current vs Voltage Forward Current vs Voltage 2 UC1611 UC3611 TYPICAL APPLICATIONS A. Clamp Diodes - PWMS and Drivers B. Transformer Coupled Drive Circuits C. Linear Regulations UNITRODE INTEGRATED CIRCUITS 7 CONTINENTAL BLVD. • MERRIMACK, NH 03054 TEL. (603) 424-2410 • FAX (603) 424-3460 3 IMPORTANT NOTICE Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability. TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements. CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER CRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TO BE FULLY AT THE CUSTOMER’S RISK. In order to minimize risks associated with the customer’s applications, adequate design and operating safeguards must be provided by the customer to minimize inherent or procedural hazards. TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other intellectual property right of TI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. TI’s publication of information regarding any third party’s products or services does not constitute TI’s approval, warranty or endorsement thereof. Copyright 1999, Texas Instruments Incorporated