UC1611 UC3611 Quad Schottky Diode Array FEATURES DESCRIPTION • Matched, Four-Diode Monolithic Array • High Peak Current • Low-Cost MINIDIP Package • Low-Forward Voltage This four-diode array is designed for general purpose use as individual diodes or as a high-speed, high-current bridge. It is particularly useful on the outputs of high-speed power MOSFET drivers where Schottky diodes are needed to clamp any negative excursions caused by ringing on the driven line. • Parallelable for Lower VF or Higher IF • Fast Recovery Time • Military Temperature Range Available These diodes are also ideally suited for use as voltage clamps when driving inductive loads such as relays and solenoids, and to provide a path for current free-wheeling in motor drive applications. The use of Schottky diode technology features high efficiency through lowered forward voltage drop and decreased reverse recovery time. This single monolithic chip is fabricated in both hermetic CERDIP and copper-leaded plastic packages. The UC1611 in ceramic is designed for -55°C to +125°C environments but with reduced peak current capability: while the UC3611 in plastic has higher current rating over a 0°C to +70°C ambient temperature range. CONNECTION DIAGRAM DIL-8 (TOP VIEW) N or J Package PLCC-20 (TOP VIEW) Q Package 6/93 Powered by ICminer.com Electronic-Library Service CopyRight 2003 SOIC-16 (TOP VIEW) DW Package UC1611 UC3611 ABSOLUTE MAXIMUM RATINGS Peak Inverse Voltage (per Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Diode-to-Diode Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Peak Forward Current UC1611 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A UC3611 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Power Dissipation at TA = +70°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C Lead Temperature (Soldering, 10 Seconds). . . . . . . . . . . . . . . . . . . . . . . +300°C Note: Please consult Packaging Section of Databook for thermal limitations and considerations of package. ELECTRICAL CHARACTERISTICS: All specifications apply to each individual diode. TJ = +25°C except as noted. TA = TJ. PARAMETER Forward Voltage Drop Leakage Current Reverse Recovery TEST CONDITIONS MIN. TYP. 0.3 0.4 0.7 IF = 1A 0.9 1.2 V VR = 40V 0.01 0.1 mA VR = 40V, TJ = +100°C 0.1 1.0 mA 0.5A Forward to 0.5A Reverse 20 IF = 100mA Forward Recovery 1A Forward to 1.1V Recovery Junction Capacitance VR = 5V MAX. UNITS V ns 40 ns 100 pF Note: At Forward currents of greater than 1.0A, a parasitic current of approximately 10mA may be collected by adjacent diodes. Reverse Current vs Voltage Powered by ICminer.com Electronic-Library Service CopyRight 2003 Forward Current vs Voltage 2 UC1611 UC3611 TYPICAL APPLICATIONS A. Clamp Diodes - PWMS and Drivers B. Transformer Coupled Drive Circuits C. Linear Regulations UNITRODE INTEGRATED CIRCUITS 7 CONTINENTAL BLVD. • MERRIMACK, NH 03054 TEL. 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