SEME BFC50 LAB 4TH GENERATION MOSFET TO247–AD Package Outline. Dimensions in mm (inches) (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC 4.69 5.31 1.49 2.49 4.50 (0.177) M ax. 3.55 (0.140) 3.81 (0.150) VDSS ID(cont) RDS(on) 3 1.65 (0.065) 2.13 (0.084) 19.81 (0.780) 20.32 (0.800) 0.40 (0.016) 0.79 (0.031) 2 1 2.87 (0.113) 3.12 (0.123) 1.01 (0.040) 1.40 (0.055) 2.21 (0.087) 2.59 (0.102) Terminal 1 Gate Terminal 3 Source 5.25 (0.215) BSC Terminal 2 500V 23.0A Ω 0.25Ω Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDSS Drain – Source Voltage 500 V ID Continuous Drain Current 23 A IDM Pulsed Drain Current 1 92 A VGS Gate – Source Voltage ±30 V PD Total Power Dissipation @ Tcase = 25°C 310 W TJ , TSTG Operating and Storage Junction Temperature Range TL Lead Temperature : 0.063” from Case for 10 Sec. –55 to 150 °C 300 STATIC ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated) Characteristic Drain – Source Breakdown Voltage Test Conditions VGS = 0V , ID = 250µA Zero Gate Voltage Drain Current VDS = VDSS 250 (VGS = 0V) VDS = 0.8VDSS , TC = 125°C 1000 IGSS Gate – Source Leakage Current VGS = ±30V , VDS = 0V ±100 nA VGS(TH) Gate Threshold Voltage VDS = VGS , ID = 1.0mA 4 V ID(ON) On State Drain Current 2 RDS(ON) Drain – Source On State Resistance 2 BVDSS IDSS VDS > ID(ON) x RDS(ON) Max VGS = 10V VGS = 10V , ID = 0.5 ID [Cont.] Min. 500 2 Typ. Max. Unit V 23 µA A 0.25 Ω 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2% Semelab plc. Telephone (0455) 556565. Telex: 341927. Fax (0455) 552612. Prelim. 8/95 SEME BFC50 LAB DYNAMIC CHARACTERISTICS Ciss Characteristic Input Capacitance Test Conditions VGS = 0V Coss Output Capacitance Crss Min. Typ. 2380 Max. Unit 2950 VDS = 25V 522 730 Reverse Transfer Capacitance f = 1MHz 196 290 Qg Total Gate Charge3 VGS = 10V 83 130 Qgs Gate – Source Charge VDD = 0.5 VDSS 12.6 19 Qgd Gate – Drain (“Miller”) Charge ID = ID [Cont.] @ 25°C 51 76 td(on) Turn–on Delay Time VGS = 15V 14 28 tr Rise Time VDD = 0.5 VDSS 27 55 td(off) Turn-off Delay Time ID = ID [Cont.] @ 25°C 61 92 tf Fall Time RG = 1.8Ω 36 71 pF nC ns SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS IS Characteristic Continuous Source Current Test Conditions (Body Diode) ISM Pulsed Source Current1 (Body Diode) VSD Diode Forward Voltage2 VGS = 0V , IS = – ID [Cont.] trr Reverse Recovery Time IS = – ID [Cont.] , dls / dt = 100A/µs Qrr Reverse Recovery Charge Min. Typ. Max. Unit 23 A 92 1.3 V 160 320 640 ns 2.7 5.5 11 µC Min. Typ. SAFE OPERATING AREA CHARACTERISTICS Characteristic SOA1 Safe Operating Area SOA2 Safe Operating Area ILM Inductive Current Clamped Test Conditions VDS = 0.4VDSS , t = 1 Sec. IDS = PD / 0.4VDSS VDS = PD / ID [Cont.] IDS = ID [Cont.] , t = 1 Sec. Max. Unit 310 W 310 W 92 A THERMAL CHARACTERISTICS RθJC Characteristic Junction to Case RθJA Junction to Ambient Min. Typ. Max. Unit 0.40 °C/W 40 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2% 3) See MIL–STD–750 Method 3471 CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed. Semelab plc. Telephone (0455) 556565. Telex: 341927. Fax (0455) 552612. Prelim. 8/95 SEME BFC50 LAB ZθJC Thermal Impedance (°C/W) Figure 1 MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION – CASE vs PULSE DURATION Rectangular Pulse Duration (s) Figure 3 TYPICAL OUTPUT CHARACTERISTICS ID Drain Current (A) ID Drain Current (A) Figure 2 TYPICAL OUTPUT CHARACTERISTICS VDS Drain – Source Voltage (V) Figure 4 TYPICAL TRANSFER CHARACTERISTICS Figure 5 RDS(ON) vs DRAIN CURRENT ID Drain Current (A) RDS(ON) Drain – Source On–Resistance (Normalised) VDS Drain – Source Voltage (V) VGS Gate – Source Voltage (V) Semelab plc. Telephone (0455) 556565. Telex: 341927. Fax (0455) 552612. ID Drain Current (A) Prelim. 8/95 SEME BFC50 LAB Figure 7 BREAKDOWN VOLTAGE vs TEMPERATURE ID Drain Current (A) BVDSS Drain – Source Breakdown Voltage (Normalised) Figure 6 MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE TJ Junction Temperature (°C) Figure 8 ON RESISTANCE vs TEMPERATURE Figure 9 THRESHOLD VOLTAGE vs TEMPERATURE VGS(TH) Threshold Voltage (V) (Normalised) RDS(ON) Drain – Source On–Resistance (Normalised) TC Case Temperature (°C) TC Case Temperature (°C) Figure 10 MAXIMUM SAFE OPERATING AREA Figure 11 TYPICAL CAPACITANCE vs DRAIN – SOURCE VOLTAGE C Capacitance (pF) ID Drain Current (A) TJ Junction Temperature (°C) VDS Drain – Source Voltage (V) Semelab plc. Telephone (0455) 556565. Telex: 341927. Fax (0455) 552612. VDS Drain – Source Voltage (V) Prelim. 8/95 SEME BFC50 LAB Figure 13 TYPICAL SOURCE – DRAIN DIODE FORWARD VOLTAGE VGS Gate – Source Voltage (V) BVDSS Drain – Source Breakdown Voltage (Normalised) Figure 12 GATE CHARGES vs GATE – SOURCE VOLTAGE Qg Total Gate Charge (nC) Semelab plc. Telephone (0455) 556565. Telex: 341927. Fax (0455) 552612. TJ Junction Temperature (°C) Prelim. 8/95