SEME BUL56B LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 4.5 6.3 1.3 3.6 Dia. 18.0 15.1 Designed for use in electronic ballast applications • • • • 1 2 3 14.0 1.3 0.85 SEMEFAB DESIGNED AND DIFFUSED DIE HIGH VOLTAGE FAST SWITCHING HIGH ENERGY RATING 0.5 FEATURES • Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. 2.54 2.54 TO220 Pin 1 – Base Pad 2 – Collector Pad 3 – Emitter • Ion implant and high accuracy masking for tight control of characteristics from batch to batch. • Triple Guard Rings for improved control of high voltages. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO Collector – Base Voltage(IE=0) 250V VCEO Collector – Emitter Voltage (IB = 0) 100V VEBO Emitter – Base Voltage (IC = 0) 10V IC Continuous Collector Current 18A IC(PK) Peak Collector Current 25A IB Base Current 5A Ptot Total Dissipation at Tcase = 25°C Tstg Operating and Storage Temperature Range Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. 85W –55 to +150°C Prelim. 2/97 SEME BUL56B LAB ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. VCEO(sus) ELECTRICAL CHARACTERISTICS Collector – Emitter Sustaining Voltage IC = 10mA 100 V(BR)CBO Collector – Base Breakdown Voltage IC = 1mA 250 V(BR)EBO Emitter – Base Breakdown Voltage IE = 1mA 10 ICBO Collector – Base Cut–Off Current ICEO Collector – Emitter Cut–Off Current IEBO Emitter Cut–Off Current hFE* DC Current Gain Typ. Unit V VCB = 250V IB = 0 Max. 10 TC = 125°C 100 VCE = 90V 100 VEB = 9V 10 IC = 0 TC = 125°C IC = 0.3A VCE = 5V 30 90 IC = 5A VCE = 5V 25 60 IC = 12A VCE = 1V 5 100 µA µA µA — TC = 125°C VCE(sat)* IC = 1A IB = 0.1A 0.07 0.2 Collector – Emitter Saturation Voltage IC = 7A IB = 0.7A 0.2 0.6 IC = 12A IB = 1.2A 0.6 1.2 IC = 7A IB = 0.7A 0.95 1.2 IC = 12A IB = 1.2A 1.2 1.8 V VBE(sat)* Base – Emitter Saturation Voltage ft DYNAMIC CHARACTERISTICS Transition Frequency IC = 0.2A VCE = 4V 20 MHz Cob Output Capacitance VCB = 10V f = 1MHz 100 pF V * Pulse test tp = 300µs , δ < 2% Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 2/97