SEME BUL70A LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 0.32 0.24 0.10 0.02 16° max. 13° Designed for use in electronic ballast applications 1.70 max. 10° max. 6.7 6.3 3.1 2.9 4 3.7 7.3 3.3 6.7 1 1.05 0.85 2 3 0.80 0.60 2.30 4.60 SOT-223 Pin 1 - Base Pin 2 - Collector Pin 3 - Emitter Pin 4 - Collector • SEMEFAB DESIGNED AND DIFFUSED DIE • HIGH VOLTAGE • FAST SWITCHING • HIGH ENERGY RATING • SURFACE MOUNT FOOT PRINT FEATURES • Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. • Ion implant and high accuracy masking for tight control of characteristics from batch to batch. • Triple Guard Rings for improved control of high voltages. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO Collector – Base Voltage(IE=0) 1000V VCEO Collector – Emitter Voltage (IB = 0) 500V VEBO Emitter – Base Voltage (IC = 0) 10V IC Continuous Collector Current 4A IC(PK) Peak Collector Current 7A IB Base Current 2A Ptot Total Dissipation at Tcase = 25°C 3W Tstg Operating and Storage Temperature Range Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. –55 to +150°C Prelim. 2/97 SEME BUL70A LAB ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. VCEO(sus) ELECTRICAL CHARACTERISTICS Collector – Emitter Sustaining Voltage IC = 10mA 500 V(BR)CBO Collector – Base Breakdown Voltage IC = 1mA 1000 V(BR)EBO Emitter – Base Breakdown Voltage IE = 1mA 10 ICBO Collector – Base Cut–Off Current ICEO Collector – Emitter Cut–Off Current IEBO Emitter Cut–Off Current hFE* DC Current Gain Typ. Unit V VCB = 1000V IB = 0 Max. 10 TC = 125°C 100 VCE = 500V 100 VEB = 9V 10 IC = 0 TC = 125°C IC = 0.1A VCE = 5V 20 30 IC = 0.5A VCE = 5V 9 15 IC = 1A VCE = 1V 5 8 100 µA µA µA — TC = 125°C IC = 100mA VCE(sat)* IB = 20mA 0.05 0.1 IB = 0.1A 0.15 0.2 IC = 1A IB = 0.2A 0.3 0.5 IC = 0.5A IB = 0.1A 0.8 1 IC = 1A IB = 0.2A 0.9 1.1 Collector – Emitter Saturation Voltage IC = 0.5A V VBE(sat)* Base – Emitter Saturation Voltage ft DYNAMIC CHARACTERISTICS Transition Frequency IC = 0.2A VCE = 4V 20 MHz Cob Output Capacitance VCB = 10V f = 1MHz 20 pF V * Pulse test tp = 300µs , δ < 2% Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 2/97